MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - Patent 2162917

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EP 2 162 917 A1

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(43)	Date of publication:
	17.03.2010 Bulletin 2010/11

(21)	Application number: 08768806.5

(22)	Date of filing: 27.06.2008

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International Patent Classification (IPC):

H01L 27/102^(2006.01)
H01L 27/06^(2006.01)
H01L 45/00^(2006.01)

H01L 21/822^(2006.01)
H01L 27/24^(2006.01)
H01L 27/10^(2006.01)

(86)	International application number:
	PCT/US2008/007985

(87)	International publication number:
	WO 2009/005699 (08.01.2009 Gazette 2009/02)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
	Designated Extension States:
	AL BA MK RS

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Priority:

29.06.2007 US 772088
29.06.2007 US 772082

(71)	Applicant: Sandisk 3d, Llc
	Milpitas, CA 95035 (US)

(72)	Inventors:
	SCHRICKER, April Fremont, CA 94538 (US) HERNER, S., Brad San Jose, CA 95125 (US) CLARK, Mark Santa Clara, CA 95050 (US)

(74)	Representative: Hitchcock, Esmond Antony
	Marks & Clerk LLP 90 Long Acre London WC2E 9RA London WC2E 9RA (GB)

(54)	MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME