Technical field
[0001] The present invention relates to a process for manufacturing a colloidal material,
to colloidal materials obtainable by this process and to uses of said colloidal materials
for the manufacture of optic devices.
[0002] The colloidal material obtainable by the process of the present invention may be
for example CdS, InP, or PbS. Many other examples are given below.
[0003] The colloidal materials of the present invention may be used for example for the
manufacture of lasers or optoelectronic devices. For example, according to embodiments
of the present invention, the colloidal materials of the present invention may be
used instead of a MBE or MOCVD semi-conductor materials.
[0004] The materials of the present invention are also useful for testing further theories
of quantum confinement.
[0005] In the following text, the bracketed bolded references ([x]) are references attached
to the cited documents and publication also listed in the reference lisiting after
the « Example » part of the specification.
Prior art
[0006] Nanometre size inorganic materials exhibit a wide range of electrical and optical
properties that depend on composition, size, shape, and surface ligands and are of
both fundamental and technological interest as disclosed in
Yin, Y. et al., A.P. Colloidal nanocrystal synthesis and the organic-inorganic interface.
Nature 437, 664-670 (2005)
[1], in
Hu, J.T. et al., C.M. Chemistry and physics in one dimension: Synthesis and properties
of nanowires and nanotubes. Accounts Chem Res 32, 435-445 (1999)
[2] and in
Geim, A.K. et al., The rise of graphene. Nature Materials 6, 183-191 (2007)
[3].
[0007] Well documented procedures to grow zero dimensional systems as disclosed in
Murray, C.B. et al., M.G. Synthesis and Characterization of Nearly Monodisperse CdE
(E = S, Se, Te) Semiconductor Nanocrystallites. J Am Chem Soc 115, 8706-8715 (1993)
[4], dots, and one dimensional systems as disclosed in
Duan, X.F. et al., C.M. General synthesis of compound semiconductor nanowires. Adv
Mater 12, 298-302 (2000)
[5] and
Peng, X.G. et al. Shape control of CdSe nanocrystals. Nature 404, 59-61 (2000)
[6], wires and tubes, as colloidal particles in solution have been reported.
[0008] In contrast, there are no methods of preparation that yield optically active two
dimensional soluble particles.
[0010] Wires, 2D for films - can be grown in gas phase syntheses on a substrate by molecular
beam epitaxy (MBE) and other techniques as disclosed in
[7] or from melted clusters by vapor-liquid-solid process as disclosed in
Morales, A.M. et al., C.M. A laser ablation method for the synthesis of crystalline
semiconductor nanowires. Science 279, 208-211 (1998)
[8]. They can also be grown in liquid phase colloidal synthesis in aqueous or non-hydrolitic
media as disclosed in
Jun, Y.W. et al., J. Shape control of semiconductor and metal oxide nanocrystals through
nonhydrolytic colloidal routes. Angew Chem Int Edit 45, 3414-3439 (2006)
[9] As for the gas phase approaches, the non hydrolytic liquid phase synthesis, gives
access to 0D and 1D crystals with controlled nanometric size and shape as disclosed
in reference
[1], with the advantages that the crystals can be processed more easily for surface chemistry
modification as disclosed in
Michalet, X. et al., Quantum dots for live cells, in vivo imaging, and diagnostics.
Science 307, 538-544 (2005)
[10], core/shell synthesis as disclosed in
Hines, M.A. et al., P. Synthesis and characterization of strongly luminescing ZnS-
Capped CdSe nanocrystals. J Phys Chem-Us 100, 468-471 (1996)
[11], directed assembly as disclosed in
Redl, F.X. et al., S. Three-dimensional binary superlattices of magnetic nanocrystals
and semiconductor quantum dots. Nature 423, 968-971 (2003)
[12] or incorporation in polymer matrices or nanodevices as disclosed in
Caruge, J.M., Halpert, J.E., Wood, V., Bulovic, V. & Bawendi, M.G. Colloidal quantum-dot
light-emitting diodes with metal-oxide charge transport layers. Nat. Photonics 2,
247-250 (2008)
[13]. Interestingly, 2D semiconductor crystals, so called quantum wells, have been synthesized
only by epitaxial growth on substrate using MBE for example.
[0011] The synthesis of 2D colloidal nanocrystals, nanoplatelets or nanodisks, is limited
to few examples of metal as disclosed in
Puntes, V.F. et al., A.P. Synthesis of hcp-Co nanodisks. J Am Chem Soc 124, 12874-12880
(2002)
[14] and in
Xu, R. et al., Y.D. Single-crystal metal nanoplatelets: Cobalt, nickel, copper, and
silver. Cryst. Growth Des. 7, 1904-1911 (2007)
[15] and lanthanide-oxides as disclosed in
Si, R., Zhang, Y.W., You, L.P. & Yan, C.H. Rare-earth oxide nanopolyhedra, nanoplates,
and nanodisks. Angew Chem Int Edit 44, 3256-3260 (2005)
[16] materials as well as CuS as disclosed in
Sigman, M.B. et al. Solventless synthesis of monodisperse Cu2S nanorods, nanodisks,
and nanoplatelets. J Am Chem Soc 125, 16050-16057 (2003)
[17] and NiS as disclosed in
Ghezelbash, A., Sigman, M.B. & Korgel, B.A. Solventless synthesis of nickel sulfide
nanorods and triangular nanoprisms. Nano Letters 4, 537-542 (2004)
[18].
[0012] The general synthesis principle of monodisperse colloidal nanocrystals is based on
the separation of the nucleation and growth stages. When the seed growth is favoured
in 1 direction, nanorods are obtained, and 2D crystals are formed when growth is blocked
in 1 direction.
[0013] While on the paper, things look simple, practically, the synthesis of colloidal nanocrystals
of any dimensionality <3 relies on subtle combination of temperature, type and concentration
of precursors and ligands (or surfactant), and cannot yet be guided by a precise understanding
of the fabrication process at the molecular level.
[0014] The major advances in the synthesis of colloidal semiconductor nanocristals were
obtained with CdSe, first in 1993 with the synthesis of quantum dots as disclosed
in reference
[4], and then in 2000 with the synthesis of nanorods as disclosed in reference
[6].
[0015] But the processes disclosed in the prior art are very expensive, difficult to be
carried out, do not allow an easy synthesis of the colloidal material and do not offer
any possibility to obtain a controlled homogenous and reproductible thicknesses of
the materials. Further, the structures of the materials obtained with the processes
of the prior art are only basic ones (1, 2D), with hazardous and heterogeneous thicknesses
and very irregular lateral dimensions (3D).
[0016] No prior art successfully addresses these problems.
[0017] Thus, there remains a major need of a process that satisfactorily resolves these
problems and disadvantages of the prior art.
Disclosure of the invention
[0018] The present invention successfully addresses among others the above disclosed problems
and disadvantages of the prior art which has failed to do.
[0019] The process of the present inventon is a process for preparing a colloidal material
of formula A
nX
m, said process comprising :
a first step of reacting together two of the three following reagents in the presence of a non-
or weakly-coordinating solvent:
- reagent (i) : X or a soluble form of X
- reagent (ii) : R'(COOH) or an acetate salt, and
- reagent (iii) : A(R-COO)p,
and
a second step of adding the third reagent into the reaction mixture obtained in the first step,
wherein
p is 1 or 2 ;
R is a linear or branched C
1-30 alkyl group ;
R' is a linear or branched C
2-30 alkyl group; and
wherein
the choice of reagent (i), (ii) and (iii) is such that
if R is -CH3, reagent (ii) is R'(COOH) and
if R is a linear or branched C
2-30 alkyl group, reagent (ii) is an acetate salt; and
wherein
X is a metal selected from groups V or VI of the periodic table;
A is an element selected from groups II, III or IV of the periodic table ; and
A and X are selected respectively from one the following combinations : A from group
II, X from group VI; or A from group III, X from group V; or A from group IV, X from
group VI.
[0020] In a first example, this invention provides a process for preparing a colloidal material
of formula A
nX
m, the process comprising a step of solution phase decomposition of a mixture of X
and a carboxylate of formula A(R-COO)
p in the presence of a non- or weakly-coordinating solvent, and a step of injecting
an acetate salt or acetic acid in the mixture ; wherein A is an element selected from
groups II, III or IV of the periodic table ; p is an integer between 1 and 2 ; R is
a linear or branched C
1-30alkyl group; X is a metal selected from groups V or VI of the periodic table ; and
n and m are such that A
nX
m is a neutral compound ; and wherein, in the selection of the pair (A, X), the groups
of the periodic table of A and X, respectively, are selected from the following combinations
: (group II, group VI), (group III, group V) or (group IV, group VI).
[0021] In this example, according to the present invention, the process may comprise the
steps of:
- (a) providing the A carboxylate and X in a non-coordinating solvent,
- (b) degasing the mixture obtained in step (a),
- (c) heating the degased mixture obtained in step (b) to a temperature between 100
and 280°C, preferably between 120 and 240°C, thus inducing solution phase decomposition
of the mixture of A carboxylate and X, thereby producing a AnXm colloidal material,
- (d) injecting the acetate salt or acetic acid between steps (a) and (b) or during
step (b) or between steps (b) and (c) or during the heating step (c), preferably during
step (c), and
- (e) recovering the AnXm colloidal material which is in the form of platelets.
[0022] In this first example, the A carboxylate corresponds to A(R-COO)p, wherein R is a
linear or branched C
2-30 alkyl group, and the acetate salt or acetic acid is respectively a salt of CH
3COOH or acid acetic.
[0023] According to this example, the process of the present invention comprises a step
of solution phase decomposition of a mixture of X and a carboxylate of formula A(R-COO)
p as defined above in the presence of a non- or weakly-coordinating solvent.
[0024] In a second example, according to the present invention, the process may comprise
the steps of:
(a1) providing the A acetate and carboxylic acid in a non coordinating solvent
(b1) degasing the mixture obtained in step (a1),
(c1) heating the degased mixture obtained in step (b1) to a temperature between 100
and 280°C, preferably between 120 and 240°C,
(d1) injecting X in the heated and degassed mixture of step c1, thereby producing
an AnXm colloidal material,
(e1) recovering the AnXm colloidal material which is in the form of platelets.
[0025] In this second example, the A acetate corresponds to A(R-COO)p, wherein R is -CH
3, and the carboxylic acid corresponds to R'(COOH), wherein R' is a linear or branched
C
2-30 alkyl group.
[0026] In a third example, according to the present invention, the process may comprise
the steps of:
(a2) providing a carboxylic acid and X in a non coordinating solvent
(b2) degasing the mixture obtained in step (a2),
(c2) heating the degased mixture obtained in step (b2) to a temperature between 100
and 280°C, preferably between 120 and 240°C,
(d2) injecting a A actetate in the heated and degassed mixture of step (c2), thereby
producing an AnXm colloidal material,
(e2) recovering the AnXm colloidal material which is in the form of platelets.
[0027] In this third example, the A acetate corresponds to A(R-COO)p, wherein R is -CH
3, and the carboxylic acid corresponds to R'(COOH), wherein R' is a linear or branched
C
2-30 alkyl group.
[0028] In a fourth example, according to the present invention, the process may comprise
the steps of
(a3) providing the A acetate and X in a non-coordinating solvent,
(b3) degasing the mixture obtained in step (a3),
(c3) heating the degased mixture obtained in step (b3) to a temperature between 100
and 280°C, preferably between 120 and 240°C,
(d3) injecting the carboxylic acid between steps (a3) and (b3) or during step (b3)
or between steps (b3) and (c3) or during the heating step (c3), preferably during
step (c3), , thereby producing an AnXm colloidal material, and
(e3) recovering the AnXm colloidal material which is in the form of platelets.
[0029] In this fourth example, the A acetate corresponds to A(R-COO)p, wherein R is -CH
3, and the carboxylic acid corresponds to R'(COOH), wherein R' is a linear or branched
C
2-30 alkyl group.
[0030] In the present invention, « periodic table » refers to the Mendeleiev Periodic Table
of the elements.
[0031] In the present invention, a « weakly coordinating solvent » is a solvent like octadecene
which is not a coordinating solvent of metals or semi-conductors. However, the present
inventors have noted that the presence of a double bond in a long alkyl chain generates
a low complexation of ODE (Octadecene) to the surface of the prepared nanoparticules.
According to the present invention, the non-coordinating solvent may be for example
octadecene, dichloromethane, tétrahydrofurane (THF), trioctylamine, octadecanal, diesel,
oil.
[0032] According to the present invention, in A(R-COO)
p , R is a linear or branched C
1-30alkyl group, preferably a linear or branched C
1-20alkyl group , most preferably a linear or branched C
4-18alkyl group. For example, the « C
1-C
30 alkyl-COOH » may be melissic acid, octacosanoic acid, decanoic acid, undecanoic acid,
myristic acid, oleic acid, acetic acid, propionic acid, butyric acid or a mixture
thereof.
[0033] According to the present invention, the carboxylate R-COO
- of reagent (iii), i.e. of A(R-COO)
p , may be selected from any carboxylate ions of the above carboxylic acids, for example,
from the group comprising acetate, laurate, myristate, palmitate, stearate or a mixture
thereof.
[0034] For example, the carboxylic acid of step (a1) or (a2) or (d3) may be selected from
the group comprising melissic acid, octacosanoic acid, decanoic acid, undecanoic acid,
myristic acid, oleic acid, acetic acid, propionic acid, butyric acid or a mixture
thereof.
[0035] According to the present invention, in R'(COOH) of reagent (ii), R' may be a linear
or branched C
2-30 alkyl group. For example, it may be selected from any carboxylate ions of the above
carboxylic acids, for example from the group comprising laurate, myristate, palmitate,
stearate or a mixture thereof.
[0036] According to the present invention, the acetate salt of reagent (ii) may be a metal
acetate salt and/or the acetate salt may be an hydrate or not.
[0037] According to the present invention, when in reagent (ii) the acetate salt is a metal
acetate salt, the metal, i.e. A, may be selected for example from the group comprising
Cd, Mn, Zn, Mg, Co, Na, In or K or a mixture thereof.
[0038] According to the present invention, for example, the acetate salt may be selected,
for example, from the group comprising cadmium acetate dihydrate, Mn(Ac)
2,4H
2O, Zn(Ac)
2 , Mg(Ac)
2,4H
2O, Co(Ac)
2,4H
2O or NaAc or a mixture thereof.
[0039] According to the present invention, X or a soluble form of X is used in the process.
X is a metal selected from groups V or VI of the periodic table. For example, X may
be selected form the group comprising Se, Te, S, P, As and Sb or a mixture thereof.
When X is in a soluble form, for exemple in step (d1), it may be solubilized with
a solvant selected from the group comprising trioctylphosphine (TOP), tributylphosphine
(TBP) and octadécène (ODE), for example TOP or TBP or ODE Te or TOP or TBP or ODE
Se when X is Te or Se respectively.
[0040] For example for Se, CH
4N
2Se (selenourea) may also be used.
[0041] In the process of the present invention, the first step, for example step (a) or
(a1) or (a2) or (a3), is a mixing step. It may be carried out at any suitable temperature
allowing the mixture of the carboxylate and X in the non-coordinating solvent. For
example, the first step, for example step (a) or (a1) or (a2) or (a3), may be carried
out at room temperature, e.g. at a temperature below the boiling temperature of the
non coordinating solvant, generaly at a temperature from 5 to 100°C, for example from
5 to 90°C, for example from 5 to 60°C, for example from 70 to 90°C, for example at
a temperature from 10 to 90°C, for example from 10 to 45°C, preferably from 20 to
30°C.
[0042] According to the present invention, the process of the present invention may also
comprise a degassing step. This degassing step, for example degasing step (b) or (b1)
or (b2) or (b3), may be carried out at a pressure below the atmospheric pressure by
any means known by the skilled person in the art. This step may be carried out for
example at a pressure of from 10 to below 10
5 Pa. Preferably the degasing step, for example, (b) or (b1) or (b2) or (b3), is carried
out until vacuum. The degassing step, for example (b) or (b1) or (b2) or (b3), may
be carried out at the same temperature as step (a) or (a1) or (a2) or (a3) respectively,
or at a different temperature. For example, the degassing step may be carried out
at a temperature of from 20°C to 90°C. For example for Cd(Ac)
2 , degassed or not, the temperature may be from 70°C to 90°C, for example at 80°C.
[0043] According to the present invention, the second step is preferably carried out with
an heating of the mixture. The heating step, for example (c) (c1) or (c2) or (c3),
may be carried out at any temperature allowing solution phase decomposition of the
mixture, for example, in step (c) of X and the carboxylate A(R-COO)
p. For example, the heating step may be carried out at a temperature from 100 to 300°C,
for example from 140° to 260°C.
[0044] According to the present invention, the second step, also called heating step, for
example step (c) or (c1) or (c2) or (c3), is preferably carried out under inert atmosphere.
Inert atmosphere may be azote, or any other inert gas known by the skilled person.
[0045] According to the present invention, the heating step, for example (c) or (c1d1) or
(c2d2) or (c3), may carried out during any suitable time period allowing a solution
phase decomposition, for example of the mixture of X and carboxylate A(R-COO)
p. Preferably the heating step is carried out during a time period ranging from 1 minute
to 1 hour, preferably from 1 minute to 30 minutes.
[0046] According to the present invention, the process of the present invention may also
comprise a recovering step, for example the recovering step (e) or (e1) or (e2) or
(e3). This step may be carried after precipitation of the A
nX
m colloidal material obtained in step (c), respectively (c1) or (c2) or (c3). This
recovering step may be carried out by any suitable method known by the skilled person,
preferably by alcool precipitation. When alcool precipitation is used, the alcool
used may be selected, for example from the group comprising methanol, ethanol, propanol
or butanol.
[0047] Other method include differential precipitations. For example at the end of the synthesis,
oleic acid and hexane may be introduced at room temperature, for example at a temperature
of from 15 to 30°C. Polyhedral QDs are soluble in hexane+oleic acid, whereas platelets
precipitate upon centrifugation. In an other example, the synthesis product may be
precipitated with addition of ethanol. After centrifugation, the precipitate may suspended
in tetrahydrofuran (THF). Hexane and/or ethanol may be added, for example slowly,
until a slightly cloudy mixture is obtained. Centrifugation allows the separation
of platelets from QDs. See reference [4] for a detailed description of size selective
precipitation.
[0048] According to the present invention, the A
nX
m colloidal material recovered at the end of the process of the present invention,
for example in step (d) or (d1) or (d2) or (d3), is preferably suspended in a solvent
which does not react with the A
nX
m colloidal material, for example heptane or hexane, tétrahydrofurane or tétrachloroethylène.
Any other equivalent solvant that does not react with the recovered colloidal material
may be used.
[0049] Any suitable concentrations of reagents (i), (ii) and (iii) may be used as long as
the chemical reaction occurs.
[0050] For example the molar proportions of A and X may be from 1:100 to 100:1, for example
1:50 to 50:1, for example 6:1 to 2:1.
[0051] Preferably, in the process of the present invention the molar proportion of reagent
(ii) and (iii) may be from 1:1000 to 1000:1, for example 1:50 to 50:1, for example
from 1:6 to 6:1, for example 1:1.
[0052] For example, according to the present invention, the solution phase decomposition
of the mixture of A carboxylate and X is preferably carried out with molar proportions
of the carboxylate A(R-COO)
p and X, i.e. A/X of between 1:99 and 99:1, for example between 20:80 and 80:20, for
example between 40:60 and 60:40, for example between 45:55 and 55:45. For example,
the solution phase decomposition of the mixture of carboxylate A(R-COO)
p and X may be carried out with equimolar or substantially equimolar proportions of
A and X or not. Preferably, the molar proportions are from 1A:1X to 6A:1X.
[0053] In the present invention, « substantially equimolar » means substantially stoechiomeric
quantities of A and X in the chemical reaction for the preparation of A
nX
m according to the process of the present invention. For example from 0,01 mmole to
100 mmoles of A and from 0,01 1 mmole to 100 mmoles of X.
[0054] According to the present invention, for example, the solution phase decomposition
of the mixture of A carboxylate and X may be carried out with equimolar or substantially
equimolar proportions of each of A carboxylate, X and acetate salt.
[0055] According to the present invention, in the first above example, the acetate salt
is preferably added during heating step (c) when an orange color is observed in the
heated mixture. In other words, step (d) is preferably carried out during heating
step (c). The introduction during the heating step gives access to platelet population
thicker than when the acetate salt is introduced at the beginning of the reaction.
[0056] According to the present invention, the acetate salt is preferably added during the
heating step, for example heating step (c) or (d2), when the temperature reaches at
least 100°C, for example 180°C, for example 195°C. Indeed, injection at high temperature
gives access to a wider range of platelet thicknesses.
[0057] According to a specific embodiment, the process of the present invention further
comprises a step of adding an unsaturated fatty acid, for example between heating
step (c) or (c1) or (c2) or (c3) and recovering step (e) or (e1) or (e2) or (e3) respectively.
This step permits a better separation between the polyhedral QDs (QDs means "quantum
dots") and the platelet shaped QDs, after synthesis.
[0058] The process of the present invention allows the manufacture of a colloidal material
of formula A
nX
m, wherein A
nX
m is as defined above. For example, the present invention is particularly suitable
for the manufature a colloidal material selected from the group consisting of CdSe,
CdTe, CdS, InP, CuInSe, CuInS
2, PbSe, PbS, InAs, InSb.
[0059] For example, the process of the present invention allows the manufature of CdSe.
In this example, the process may comprise, for example, the step of solution phase
decomposition of a mixture of a cadmium carboxylate as defined above and selenium
in the presence of the non-or weakly coordinating solvent and an acetate salt as defined
above too.
[0060] According to the present invention, selenium is preferably provided in a form selected
from the group comprising Se mesh form, sonicated selenium mesh form, Se solved in
octadecene, in triOctylPhosphine, TriButylPhosphine, alkyl ammonium selenocarbamate,
Selenourea, or an other weakly coordinating solvent. Indeed, any form of reacting
Se precursor can be used as a Se source.
[0061] According to a particular embodiment of the present invention, an additional carboxylate
may be added during the process of the present invention, for example of formula R"-COO-.
This unsaturated fatty acid may be added or injected for example in the mixture of
the first or second step. For example:
- between steps (a) or (a1) or (a2) or (a3) and (b) or (b1) or (b2) or (b3), or
- during step (b) or (b1) or (b2) or (b3), or
- between steps (b) or (b1) or (b2) or (b3) and (c) or (c1) or (c2) or (c3), or
- during the heating step (c) or (c1) or (c2) or (c3), preferably during step (c) or
(c1) or (c2) or (c3),
wherein, preferably, R" is identical or different from R and/or R', and
wherein R" is a linear or branched C1-30alkyl group, preferably a linear or branched
C1-20alkyl group , most preferably a linear or branched C4-18alkyl group. For example,
these alkyl groups may be as defined in the above description, i.e. selected, independently
from R and/or from R', in the group comprising acetate, laurate, myristate, palmitate,
stearate or a mixture thereof.
[0062] According to this particular embodiment, said carboxylate is preferably injected
in an excess molar amount of from 0,1 to 1000% with regard to the quantity of the
acetate salt.
[0063] The present invention relates therefore also to a A
nX
m colloidal material obtainable by the process of the present invention. This has been
observed experimentaly as shown below.
[0064] According to the present invention, the colloidal material may be in the form of
platelets and/or nanocrystals. This has been observed experimentaly as shown below.
The present inventors demonstrate here, for example, that quasi-2D A
nX
m platelets, for example quasi-2D CdSe platelets, can be synthesized with different
thicknesses quantified by a A
nX
m monolayer, for example a CdSe monolayer.
[0065] According to the present invention, the colloidal material may be a quasi 2D semiconductor
crystals. This has been observed experimentaly as shown below.
[0066] According to the present invention, the A
nX
m colloidal material of of the present invention may be selected from the group comprising
a II-VI, IV-VI or III-V semiconductor crystal. For example, the material may be CdSe.
For example, The present inventors show for the very first time that II-VI cadmium
selenide platelets, with thicknesses tuned at the atomic level, can be synthesized
in solution.
[0067] For example, the CdSe colloidal material may have lateral sizes of between 10 and
a few hundred nanometers (for example between 10 and 500 nm, for example between 10
and 200 nm, for example between 5 and 40 nm). In the present invention, « lateral
sizes » are the sizes other than the thinnest thickness of the platelets. In other
words, the "lateral sizes" of the platelets are the length and/or the width of the
platelets. An illustration of this definition is provided in annexed figure 4.
[0068] In the example of CdSe, the process of the present invention allows to obtain a colloidal
material having a thickness less or equal to 10 nm.
[0069] The CdSe colloidal material obtained by the process of the present invention presents
at least one fluorescent emission at 460-465 nm, 510 nm or 550 nm. The present inventors
believe that these particular properties reveals an unexpected effect due to the present
invention.
[0070] Accordingly, the present invention relates also to a nanoparticular material consisting
in a A
nX
m colloidal material, for example any one of those above defined, for example a CdSe
colloidal material, according to the present invention.
[0071] The colloidal material A
nX
m of the present invention, may be used, for example, for the manufacture of a laser
and/or instead of a MBE or a MOCVD semi-conductor material.
[0072] The material A
nX
m of the present invention may also be used for the manufacture of or in an optoelectronic
device, for example a laser, a photovoltaic cell or a diode.
[0073] For example for the diodes applications, see
J. M. Caruge, J. E. Halpert, V. Wood, V. Bulovic, M. G. Bawendi, Nat. Photonics 2,
247 (Apr, 2008)
[13], wherein the material of the present invention may advantageously be used. For example
for the photovoltaic applications, see
Y. Wu, C. Wadia, W. L. Ma, B. Sadtler, A. P. Alivisatos, Nano Letters 8, 2551 (Aug,
2008)
[31], wherein the material of the present invention may advantageously be used. For example
for the laser application, see
J. Faist, F. Capasso, D. L. Sivco et al., Science 264 (51 58), 553 (1994)
[29], wherein the material of the present invention may advantageously be used.
[0074] Accordingly, the present invention relates also to an optoelectronic device comprising
a material according to the present invention.
[0075] Accordingly, the present invention relates also to a laser, a photovoltaic cell or
a diode comprising a material according to to the present invention.
[0076] The present inventors disclose here a method for the preparation of these new colloidal
nanocrystals and characterize them structurally and optically.
[0077] As discloses herein, in the example of CdSe, they identified three platelets populations
with emission maximum at 462nm, 513nm and 550nm with corresponding thicknesses estimated
at 1.9nm, 2.2nm and 2.5nm respectively. Despite the fact that the platelets aspect
ratio within a population can range from 4 to several hundreds, the emission spectra
full width half maximum (FWHM) of each population is < 10nm at room temperature with
quantum yields that can reach 30%.
[0078] The platelets that the present inventors have synthesized are an extension of the
quantum wells epitaxially grown on substrates, with the advantages that they can be
easily synthesized in solution at low cost and used as building blocks for more advanced
structures, have uniform thickness that can be tuned within one CdSe monolayer, and
finite lateral dimensions ranging for example from 10nm to few 100 nm.
[0079] Another interesting feature of the materials of the present invention, for example
these platelets, is their very narrow FWHM at room temperature. These lead to interesting
applications like for example the synthesis of beads with an optical bar codes as
disclosed in
Han, M.Y. et al., S. Quantum-dot-tagged microbeads for multiplexed optical coding
of biomolecules. Nat Biotechnol 19, 631-635 (2001)
[30]. In this application, the material of the present invention may replace the material
disclosed in this document. The emission of these platelets should be polarized as
in the case of quantum wells. Some applications may also benefit from this property.
[0080] This invention is further illustrated by the following examples with regard to the
annexed drawings that should not be construed as limiting.
Brief description of the drawings
[0081]
- Figure 1: Transmission Electron Microscopy (TEM) images of CdSe Colloidal platelets nanocrystals
synthesized with different methods. a) injection of Zinc acetate (cadmium acetate)
at 195°C and heating at 240°C for 10min. b) and c) injection of a big quantity of
Cd(Ac)2 at 195°C and heating at 240°C for 20min (same as in a) with a second precursor injection
at 240°C and heating for 20min; d) High resolution TEM of b). e) same as a) using
manganese acetate in place of cadmium acetate. f) Cadmium acetate is injected at room
temperature with the other precursors prior to heating. Scale bars: (a-d): 10nm, (e,
f): 20nm.
- Figure 2: a) Emission and absorption spectra of a platelet solution in hexane. The sample correspond
to TEM of figure 1e). The platelets were isolated from the reaction solution with
one ethanol precipitation. b) The same fluorescence emission spectra as in a) plotted
in log/linear scale.
- Figure 3: Emission (dash line) and Photo Luminescent Excitation (solid line) spectra of different
platelet syntheses. a) Zinc acetate (cadmium acetate) injected at low temperature
(195°C) and heating at 240°C for 10min, b) injection of a big quantity of Cd(Ac)2
at 195°C and heating at 240°C for 20min; and c) same as in a) with a second precursor
injection at 240°C and heating for 20min.
- Figure 4: schematic view of platelets of CdSe obtained with the process of the present invention.
This scheme shows clearly what is meant by « lateral sizes ».
- Figure 5: picture of CdTe synthetized by the process of the present invention. Barre scale
: 30 nm.
- Figure 6: XRD pattern of CdSe platelets emitting at 510nm. The standard diffraction peak position
of ZB CdSe are indicated.
- Figure 7: Transmission Electron Microscopy (TEM) images of CdSe colloidal platelets nanocrystals.
The platelets are on their edge on the right hand side of the picture and fall like
dominos on their face as we shift to the left of the image (Scale bar 10nm)
EXAMPLES
Example 1 : Manufature of a CdSe material according to the present invention
[0082] All chemicals were purchased from Sigma Aldrich and used without further modifications.
Fluorescence emission and excitation spectra were recorded on a Jobin Yvon Fluoromax
3.
[0083] Absorption spectra were recorded on a Varian Cary 50 Probe UV-Vis spectrometer. source.TEM
images were acquired on a TEM JEOL 2010 with field electron gun. Powder X-ray Diffraction
(PXRD) experiments were realized with a Philips X'Pert diffractometer with Cu Kα source.
[0084] The nanoplatelets synthesis in this example is based on the solution phase decomposition
of Cadmium myristate and Selenium mesh precursors in the presence of a non coordinating
solvent and an acetate salt.
[0085] In this experiment, 170mg (0.3mmol) (85mg (0.15mmol)) of cadmium myristate, and 12mg
(0.15mmol) of Se mesh were mixed in 15ml of octadecene in a three neck flask and degassed
under vacuum for 10 minutes. The mixture was then heated at 240°C under Argon.
[0086] When the temperature reached 195°C (the solution is orange), 55mg (0.3mmol) of Zinc
acetate (40mg (0.15mmol) of cadmium acetate dehydrate) was swiftly introduced in the
flask.
[0087] After 10min at 240°C, the reaction was stopped by removal of the heating mantle.
[0088] The particles synthesized were isolated by ethanol precipitation and suspended in
hexane.
[0089] Platelets were separated from polyhedral quantum dots by butanol precipitation and
resuspended in hexane.
[0090] TEM (TEM JOEL 2010 with field electron gun) observations of the nanoparticles (see
annexed figure 1 a) demonstrate the formation of CdSe platelets with lateral dimensions
from 6nm to 40nm.
[0092] The platelet thickness can be measured when they stack on their edge (figure 1d and
figure 7) and is found to be around 2.2±0.3nm.
[0093] Using TEM images, no difference in the platelet thicknesses could be observed. However,
as can be seen on figure 1b, when platelets lay flat on the TEM grid, different grey
levels are distinguishable, suggesting the synthesis of platelets of different thicknesses.
[0094] The platelet formation is induced by the presence of acetate salt in the reaction
medium.
Example 2 : Manufature of a CdSe material according to example 1 with different acetate
salts
[0095] Other acetate salts have been tested in this example. The experiments were carried
out as disclosed in example 1, but the acetate salt used in example 1 has been replaced
in different experiments successively by Mn(Ac)
2,4H
2O; Zn(Ac)
2; Mg(Ac)
2,4H
2O; Co(Ac)
2,4H
2O, Na(Ac) or no alternative acetate salt.
[0096] These experiments show that the process allows the formation of CdSe platelets, with
somewhat different geometries.
[0097] In all cases, despite the presence of other metallic ions, elementary analysis indicates
that after the washing step, the platelets crystals contained only cadmium and selenium.
[0098] When the acetate salt is introduced at the beginning of the synthesis, large CdSe
quasi 2D films are obtained (figure 1f). These films lateral dimensions can reach
the micron and they can fold in rolls or in sheets. Most of them are not soluble in
solvents.
[0099] When the acetate salt is introduced after the formation of the CdSe crystal seeds,
smaller CdSe platelets with square or rectangular shape or more complex, faceted planes
(figure 1 a-e) can be obtained.
[0100] When no acetate salt is introduced, only polyhedral CdSe quantum dots are obtained.
[0101] The inventors have further noted that the shape, aspect ratio, thickness of the platelets
can be systematically controlled by varying the reaction time, the injection and growth
temperature and the ratios between the cadmium oleate, the acetate salt, and the selenium.
Example 3 : Study of the material of the present invention
[0102] The inventors studied the optical properties of the platelets synthesized at room
temperature. The emission spectra of the whole solution after the washing step and
resuspension in hexane (TEM of figure 1a) was measured in a fluorometer Fluoromax
3 Jobin Yvon
™ (see figure 2).
[0103] The first remarkable feature is that the main fluorescent emission peak, with an
emission maximum at 513nm has a full width half maximum of 41 meV, i.e. 8nm. Quantum
dots or quantum rods emitting around 500nm usually have FWHM between 25nm and 35nm,
depending on the synthesis. Such narrow FWHM suggests that the nanoparticles emitting
at this wavelength are extremely homogeneous in size, at least in the direction responsible
for this emission.
[0104] The other remarkable feature of the emission spectra (figure 2b) is the presence
in the solution of four populations (noted hereafter populationl-4) with respective
fluorescence maxima at 2.68eV, 2.42eV, 2.25eV, 2.17eV. The FWHM of populations 1-3
is 41 meV, which is 1.6k
BT at 300K.
[0105] All the CdSe platelet syntheses the inventors have tested so far produce fluorescent
populations that emit with maxima exactly at 2.68±0.01eV, 2.42±0.01eV, and 2.25±0.01eV.
[0106] Depending on the synthesis conditions, one population or the other can be obtained
in large excess compared to the other, and size selective precipitation can be used
to further isolate the sub-populationS
4.
[0107] Usually, the platelet population emitting at higher energy are less soluble in hexane
than the other.
[0108] The very narrow FWHM measured in spite of the large lateral platelets size variations
observed in TEM images (figure 1) implies that the platelet aspect ratio has only
little influence on their emission wavelength.
[0109] The major difference between the platelets population seems to be their thickness.
[0110] Interestingly, both the emission and the absorption spectra of the platelets (figure
2a) can easily be interpreted using the model of infinite one-dimensional potential
quantum wells. In this framework, the absorption coefficient has a step-like structure
[7] with each step at the threshold energy for the n
th transition between the heavy hole and the electron:

(Eq. 1) and the luminescence spectrum consist of a peak of spectral width ∼
kBT at energy ℏ
w =
Eg+Ehh1+Ee1, where
Eg is the semiconductor bandgap,
n is the number of the interband transition, n
hh* and m
e* the heavy hole and electron effective mass, and d is the thickness of the quantum
well.
[0111] The main features of the absorption spectra presented in figure 2a are also present
in the photoluminescent excitation (PLE) spectra (figure 3) of three different syntheses
yielding in excess population 1, 2, or 3.
[0112] For each PLE spectra, both the heavy-hole and the light hole transition for n=1 are
clearly visible.
[0113] Using Eq.1 with
n=1 with the following numerical values for zinc-blende CdSe: E
g=1.67eV (see
Kim, Y.D. et al. Optical-Properties of Zincblende Cdse and Zn(X)Cd(1-X)Se Films Grown
on Gaas. Phys Rev B 49, 7262-7270 (1994)
[20]), m
e*=0.11m
0 and m
hh*=1.14m
0 (
Norris, D.J. et al., M.G. Measurement and assignment of the size-dependent optical
spectrum in CdSe quantum dots. Phys Rev B 53, 16338-16346 (1996)
[21]), the inventors computed the thickness of each platelets population and found
d = 1.93nm, 2.24nm, 2.55nm. The thinner the platelet, the higher its emission energy.
The same operation using the light hole transition and an effective mass of m
lh=0.31m
0 (see reference
[21]) gives thickness of d=1.97nm, 2.25nm and 2.54nm.
[0114] The good agreement between the two sets of values confirms the attribution of the
light hole and heavy hole transition.
[0115] The thickness difference between the three populations is 0.31±0.01nm, almost exactly
half the lattice parameter of zinc-blende CdSe crystals (a=0.608nm). This suggests
that the CdSe platelets synthesized by the inventors have thicknesses quantified by
one CdSe mono-layer.
[0116] The emission spectra for each platelet population have FWHM < 10nm and the Stokes
shift between the first exciton and the platelet emission is < 10meV, in contrast
with the large Stokes shifts observed for quantum dots and quantum rods. Such small
Stokes shift is characteristic of quantum wells with precisely controlled thickness
as disclosed in
Bastard, G. et al., M. Low-Temperature Exciton Trapping on Interface Defects in Semiconductor
Quantum Wells. Phys Rev B 29, 7042-7044 (1984)
[22] and suggests that within a platelet population the thickness is indeed precisely
controlled. Using Eq. 1 with
n=
1, the platelets thicknesses can also be deduced from the emission spectra of figure
3 or figure 2b, with values identical to the ones computed above because of the absence
of significant Stokes shift.
[0117] For the thinner platelet population, a first narrow band-gap emission line precedes
a large red-shifted emission characteristic of deep trap emission readily observed
in small CdSe quantum dots.
[0118] As it is the case for quantum wells, the absorption spectra of the platelets (figure
2a) has two major peaks that correspond to the heavy hole-electron and light hole-electron
transitions for
n=
1, and one step that is attributed to the heavy hole-electron transition for
n=2. These features correspond to the platelet population emitting at 2.42eV, which, in
this case, is the dominant population. The contributions of the other populations
are visible as small bumps at 2.25eV and 2.68eV.
[0119] Based on these optical and structural observations, the inventors propose that the
platelet formation occurs through formation of small zinc-blende CdSe seeds followed
by extremely rapid precursor reaction mediated by the acetate salt. The platelet thickness
seems to be fixed by the size of the CdSe seed.
[0120] When the acetate salt is present in the starting solution at room temperature, only
large CdSe films emitting mostly at 460nm are synthesized, and the later the acetate
salt is introduced the thicker the platelets.
[0121] When the acetate salt is introduced after large CdSe (diameter>3nm) seeds are formed,
the inventors do not see evidence of platelets formation anymore, but extremely large
and polydisperse zinc blende CdSe quantum dots are formed. In contrast, re-injection
of precursors in a platelets solution does not alter the platelets thickness, but
rather modifies the absorption and emission intensity of the different platelets populations
already present in solution.
[0122] The inventors further assume that the adsorption of the myristate to two parallel
facets of the zinc-blende seeds lowers strongly their energy, and that the growth
proceeds only perpendicular to these two facets on higher energy surfaces. The smaller
the CdSe seed, the faster the lateral platelet extension, indicating that thin edges
have higher energy than thicker ones.
[0123] The control of the platelet thickness at the atomic level is a "natural" consequence
of the growth process, and while the inventors cannot exclude thickness variation
in a platelet as in the case of quantum well growth as disclosed in reference
[22], the spectroscopic data the inventors have obtained strongly suggest that most of
the platelet synthesized have uniform thickness. The crucial role of lead acetate
salt in the shape control of PbSe nanocrystals has already been documented, for example
in
Houtepen, A.J. et al., The hidden role of acetate in the PbSe nanocrystal synthesis.
J Am Chem Soc 128, 6792-6793 (2006)
[23], and the inventors expect that the synthesis the inventors have developed for CdSe
nanoplatelets can be generalized to other semiconductor compounds.
[0124] Single platelet fluorescence emission is easily visualized using a fluorescent microscope
and a mercury lamp as the excitation source. To the eye, they appear as extremely
bright source of light with strong blinking and low resistance to photobleaching,
as for CdSe quantum dots. It will be interesting to see whether core/shell platelets
structure can be synthesized.
[0129] The inventors think that stacking of platelets could lead to similar devices, especially
if core/shell platelets can be synthesized and electrically coupled.
Example 4: Manufature of a CdS Material according to the present invention
[0130] The CdS platelets.
[0131] In a three neck flask 170mg of Cd(myristate)
2 (0.3mmol), 55mg of Zn(Ac)
2 (0.3mmol), 1.5ml of SODE at 0.1M (0.15mmol) and 13.5ml of octadecene were introduced
and degassed under vacuum for 30 minutes. Then the mixture was heated at 180°C under
Argon flow for 10 minutes. Then the nanocrystals are precipitated in ethanol and suspended
in hexane.
[0132] They are not soluble in hexane.
Example 5 : Manufature of a CdTe Material according to the present invention
[0133] In a three neck flask 400mg of Cd(acetate)
2 XH
2O, 150microliter of oleic acid and 10ml of octadecene were introduced and degassed
under vacuum for 30 minutes at 100°C. Then the mixture was heated at 150°C under Argon
flow and 150microliter TOPTe (TOP = trioctylphosphine) 1 M were injected. React for
10 minutes at 180°C. After removing the heating mantle and going back to room temperature,
the nanocrystals were precipitated in ethanol and suspended in hexane or THF.
Exemple 6: Examples of manufacture of CdSe with octadecene
(ODE = Octadecene)
[0134]
- 1) Cd(myristate)2, Se mesh and ODE were introduced in a degassed container and heated up totemperature
of 240°C ; when the temperature reached 190°C, the acetate salt, for example Zn(Ac)2, Cd(Ac)2,xH2O or Mn(Ac)2,xH2O was introduced. Depending on the proportions, platelets that emit with maxima at
460nm, 510nm or 550nm were obtained.
- 2) Cd(myristate)2, Se mesh, acetate salt, for example Zn(Ac)2, Cd(Ac)2,xH2O or Mn(Ac)2,xH2O, and ODE were introduced in a degassed container. Heating at a temperature of from
180°C to 240°C.
- 3) Cd(acetate)2, oleic acide and ODE in a degassed container, with heating and intensive agitation.
Temperature of 170°C, and introducing TOPSe. Reanneal at 220°C allows to reduce the
deep trap.
- 4) Se mesh, oleic acid and ODE in a degassed container. Temperature of 240°C and adding
Cd(Ac)2. Reannealing 20 minutes at 240°C. Thick platelets are obtained.
- 5) Cd Acetate, selenium mesh and ODE were introduced in a degassed container, with heating
and intensive agitation. Temperature of 170°C, and introducing Oleic acid. Re-anneal
at 220°C allows to reduce the deep trap.
References
[0135]
- [1] Yin, Y. & Alivisatos, A.P. Colloidal nanocrystal synthesis and the organic-inorganic
interface. Nature 437, 664-670 (2005).
- [2] Hu, J.T., Odom, T.W. & Lieber, C.M. Chemistry and physics in one dimension: Synthesis
and properties of nanowires and nanotubes. Accounts Chem Res 32, 435-445 (1999).
- [3] Geim, A.K. & Novoselov, K.S. The rise of graphene. Nature Materials 6, 183-191 (2007).
- [4] Murray, C.B., Norris, D.J. & Bawendi, M.G. Synthesis and Characterization of Nearly
Monodisperse Cde (E = S, Se, Te) Semiconductor Nanocrystallites. J Am Chem Soc 115,
8706-8715 (1993).
- [5] Duan, X.F. & Lieber, C.M. General synthesis of compound semiconductor nanowires. Adv
Mater 12, 298-302 (2000).
- [6] Peng, X.G. et al. Shape control of CdSe nanocrystals. Nature 404, 59-61 (2000).
- [7] Weisbuch, C. & Vinter, B. Quantum Semiconductor Structures : fundamentals and applications.
(Academic Press, 1991).
- [8] Morales, A.M. & Lieber, C.M. A laser ablation method for the synthesis of crystalline
semiconductor nanowires. Science 279, 208-211 (1998).
- [9] Jun, Y.W., Choi, J.S. & Cheon, J. Shape control of semiconductor and metal oxide nanocrystals
through nonhydrolytic colloidal routes. Angew Chem Int Edit 45, 3414-3439 (2006).
- [10] Michalet, X. et al. Quantum dots for live cells, in vivo imaging, and diagnostics.
Science 307, 538-544 (2005).
- [11] Hines, M.A. & GuyotSionnest, P. Synthesis and characterization of strongly luminescing
ZnS- Capped CdSe nanocrystals. J Phys Chem-Us 100, 468-471 (1996).
- [12] Redl, F.X., Cho, K.S., Murray, C.B. & O'Brien, S. Three-dimensional binary superlattices
of magnetic nanocrystals and semiconductor quantum dots. Nature 423, 968-971 (2003).
- [13] Caruge, J.M., Halpert, J.E., Wood, V., Bulovic, V. & Bawendi, M.G. Colloidal quantum-dot
light-emitting diodes with metal-oxide charge transport layers. Nat. Photonics 2,
247-250 (2008).
- [14] Puntes, V.F., Zanchet, D., Erdonmez, C.K. & Alivisatos, A.P. Synthesis of hcp-Co nanodisks.
J Am Chem Soc 124, 12874-12880 (2002).
- [15] Xu, R., Xie, T., Zhao, Y.G. & Li, Y.D. Single-crystal metal nanoplatelets: Cobalt,
nickel, copper, and silver. Cryst. Growth Des. 7, 1904-1911 (2007).
- [16] Si, R., Zhang, Y.W., You, L.P. & Yan, C.H. Rare-earth oxide nanopolyhedra, nanoplates,
and nanodisks. Angew Chem Int Edit 44, 3256-3260 (2005).
- [17] Sigman, M.B. et al. Solventless synthesis of monodisperse Cu2S nanorods, nanodisks,
and nanoplatelets. J Am Chem Soc 125, 16050-16057 (2003).
- [18] Ghezelbash, A., Sigman, M.B. & Korgel, B.A. Solventless synthesis of nickel sulfide
nanorods and triangular nanoprisms. Nano Letters 4, 537-542 (2004).
- [19] Yang, Y.A., Wu, H.M., Williams, K.R. & Cao, Y.C. Synthesis of CdSe and CdTe nanocrystals
without precursor injection. Angew Chem Int Edit 44, 6712-6715 (2005).
- [20] Kim, Y.D. et al. Optical-Properties of Zincblende Cdse and Zn(X)Cd(1-X)Se Films Grown
on Gaas. Phys Rev B 49, 7262-7270 (1994).
- [21] Norris, D.J. & Bawendi, M.G. Measurement and assignment of the size-dependent optical
spectrum in CdSe quantum dots. Phys Rev B 53, 16338-16346 (1996).
- [22] Bastard, G., Delalande, C., Meynadier, M.H., Frijlink, P.M. & Voos, M. Low-Temperature
Exciton Trapping on Interface Defects in Semiconductor Quantum Wells. Phys Rev B 29,
7042-7044 (1984).
- [23] Houtepen, A.J., Koole, R., Vanmaekelbergh, D.L., Meeldijk, J. & Hickey, S.G. The hidden
role of acetate in the PbSe nanocrystal synthesis. J Am Chem Soc 128, 6792-6793 (2006).
- [24] Mahler, B. et al. Towards non-blinking colloidal quantum dots. Nature Materials 7,
659-664 (2008).
- [25] Vandermerwe, J.H. Crystal Interfaces .2. Finite Overgrowths. J Appl Phys 34, 123-&
(1963).
- [26] Bryant, G.W. Excitons in Quantum Boxes - Correlation-Effects and Quantum Confinement.
Phys Rev B 37, 8763-8772 (1988).
- [27] Nakamura, A., Yamada, H. & Tokizaki, T. Size-Dependent Radiative Decay of Excitons
in Cucl Semiconducting Quantum Spheres Embedded in Glasses. Phys Rev B 40, 8585-8588
(1989).
- [28] Chemla, D.S. & Miller, D.A.B. Room-Temperature Excitonic Nonlinear-Optical Effects
in Semiconductor Quantum-Well Structures. J. Opt. Soc. Am. B-Opt. Phys. 2, 1155-1173
(1985).
- [29] Faist, J. et al. Quantum Cascade Laser. Science 264 (5158), 553-556 (1994).
- [30] Han, M.Y., Gao, X.H., Su, J.Z. & Nie, S. Quantum-dot-tagged microbeads for multiplexed
optical coding of biomolecules. Nat Biotechnol 19, 631-635 (2001).
- [31] Y. Wu, C. Wadia, W. L. Ma, B. Sadtler, A. P. Alivisatos, Nano Letters 8, 2551 (Aug,
2008).
1. Process for preparing a colloidal material of formula A
nX
m, the process comprising :
a first step of reacting together two of the three following reagents in the presence
of a non- or weakly-coordinating solvent:
- reagent (i) : X or a soluble form of X
- reagent (ii) : R'(COOH) or an acetate salt, and
- reagent (iii) : A(R-COO)p,
and
a second step of adding the third reagent into the reaction mixture obtained in the
first step,
wherein
p is 1 or 2 ;
R is a linear or branched C
1-30 alkyl group ;
R' is a linear or branched C
2-30 alkyl group; and
wherein
the choice of reagent (i), (ii) and (iii) is such that
if R is -CH3, reagent (ii) is R'(COOH) and
if R is a linear or branched C
1-30 alkyl group, reagent (ii) is an acetate salt; and
wherein
X is a metal selected from groups V or VI of the periodic table;
A is an element selected from groups II, III or IV of the periodic table ; and A and
X are selected respectively from one the following combinations : A from group II,
X from group VI; or A from group III, X from group V; or A from group IV, X from group
VI.
2. The process of claim 1, wherein the first step is a solution phase decomposition of
a mixture of X and a carboxylate of formula A(R-COO)p in the presence of a non- or weakly-coordinating solvent, and the second step is
a step of injecting an acetate salt or acetic acid in the mixture obtained in the
first step ; wherein A is an element selected from groups II, III or IV of the periodic
table ; p is an integer between 1 and 2 ; R is a linear or branched C1-30alkyl group ; X is a metal selected from groups V or VI of the periodic table ; and
n and m are such that AnXm is a neutral compound ; and wherein, in the selection of the pair (A, X), the groups
of the periodic table of A and X, respectively, are selected from the following combinations
: (group II, group VI), (group III, group V) or (group IV, group VI).
3. The process according to claim 1 or 2, comprising steps of:
(a) providing the A carboxylate and X in a non-coordinating solvent,
(b) degasing the mixture obtained in step (a),
(c) heating the degased mixture obtained in step (b) to a temperature between 100
and 280°C, preferably between 120 and 240°C, thus inducing solution phase decomposition
of the mixture of A carboxylate and X, thereby producing a AnXm colloidal material,
(d) injecting the acetate salt or acetic acid between steps (a) and (b) or during
step (b) or between steps (b) and (c) or during the heating step (c), preferably during
step (c), and
(e) recovering the AnXm colloidal material which is in the form of platelets.
4. The process of any one of claims 1 to 3, wherein the carboxylate is acetate, laurate,
myristate, palmitate, stearate or any C1-C30 alkyl-COO- radical, preferably C1-20alkyl group , most preferably C4-18 alkyl group.
5. The process of claim any one of claims 1 to 4, wherein the non-coordinating solvent
is octadecene, dichloromethane, tétrahydrofurane (THF), trioctylamine, octadecanal,
diesel, oil.
6. The process of any one of claims 1 to 5, wherein the acetate salt is a metal acetate
salt wherein the metal is Cd, Mn, Zn, Mg, Co, Na or K.
7. The process of any one of claims 1 to 5, wherein the acetate salt is cadmium acetate
dihydrate, Mn(Ac)2,4H2O, Zn(Ac)2, Mg(Ac)2,4H2O, Co(Ac)2,4H2O or NaAc.
8. The process of any one of claims 1-7, wherein the first step is carried out at a temperature
from 10 to 90°C.
9. The process of any one of claims 3-8, wherein the degassing is carried out under vacuum
at temperature from 20° to 90°C.
10. The process of any one of claims 3-9, wherein heating step is carried out at a temperature
from 140° to 260°C.
11. The process of any one of claims 2-10, wherein heating step is carried out under inert
atmosphere.
12. The process of any one of claims 2-11, wherein heating step is carried out for a time
period ranging from 1 minute to 1 hour.
13. The process of any one of claims 2-12, wherein recovering step is carried out by alcool
precipitation.
14. The process any one of claims 2-13, wherein the solution phase decomposition of the
mixture of A carboxylate and X is carried out with a molar proportion of A carboxylate
and X from 2A: 1 X to 6A:1X.
15. The process of any one of claims 2-14, further comprising a step of adding an unsaturated
fatty acid during the process.
16. The process according to any of claim 1 to 15, wherein AnXm is a coumpound selected from the group consisting of CdSe, CdS, CdTe, InP, CuInSe,
CuInS2, PbSe, PbS, InAs, InSb.
17. The process according to claim 1 to 16, wherein AnXm is CdSe, the process comprising a step of solution phase decomposition of a mixture
of a cadmium carboxylate and selenium in the presence of a non-or weakly coordinating
solvent and an acetate salt.
18. The process of any of claim 1 to 17, wherein an additional carboxylate of formula
R"-COO- is injected in the mixture between steps (a) and (b) or during step (b) or
between steps (b) and (c) or during the heating step (c), preferably during step (c),
wherein R" is identical or different from R, and wherein R" is a linear or branched
C1-30alkyl group, preferably a linear or branched C1-20alkyl group , most preferably a linear or branched C4-18alkyl group.
19. An AnXm colloidal material obtainable by the process of any one of claims 1-18.
20. The AnXm colloidal material of claim 19, wherein the colloidal material is under the form
of platelets.
21. The AnXm colloidal material of claim 19 or 20, wherein the colloidal material is in the form
of nanocrystals.
22. The AnXm colloidal material of claim 19 or 20, wherein the colloidal material is a quasi 2D
semiconductor crystals.
23. The AnXm colloidal material of claim 19 or 20, wherein the colloidal material is a II-VI,
IV-VI or III-V semiconductor crystal.
24. The AnXm colloidal material of any one of claims 19 or 20, wherein the material is CdSe.
25. The use of a material according to any one of claims 19-24 for the manufacture of
a laser.
26. The use of a material according to any one of claims 19-24 instead of a MBE or a MOCVD
semi-conductor material.
27. A semi-conductor nanoparticular material consisting in a CdSe colloidal material according
to claim 19.
28. An optoelectronic device comprising a material according to any one of claims 19-24
.
29. A laser, a photovoltaic cell or a diode comprising a material according to any one
of claims 19-24.