(19)
(11) EP 2 166 581 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A2)

(48) Corrigendum issued on:
11.08.2010 Bulletin 2010/32

(43) Date of publication:
24.03.2010 Bulletin 2010/12

(21) Application number: 10150310.0

(22) Date of filing: 05.09.2005
(51) International Patent Classification (IPC): 
H01L 43/08(2006.01)
C23C 14/08(2006.01)
G11C 11/16(2006.01)
H01F 10/30(2006.01)
 H01L 43/12(2006.01)
C23C 14/34(2006.01)
H01F 10/32(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

(30) Priority: 07.09.2004 JP 2004259280

(62) Application number of the earlier application in accordance with Art. 76 EPC:
08159511.8 / 1973178
05077020.5 / 1633007

(71) Applicants:
  • Canon Anelva Corporation
    Kawasaki-shi Kanagawa 210-8550 (JP)
  • National Institute of Advanced Industrial Science and Technology
    Tsukuba-shi Ibaraki 205-8568 (JP)

(72) Inventors:
  • Djayaprawira, David D
    Tama-shi TokyoKanagawa 210-8550 (JP)
  • Tsunekawa, Koji
    Hachiooji-shi Tokyo (JP)
  • Nagai, Motonobu
    Kanagawa 210-8550 (JP)
  • Maehara, Hiroki
    Mitaka-shi Tokyo 181-0002 (JP)
  • Yamagata, Shinji
    Fuchu -shi Tokyo (JP)
  • Watanabe, Naoki
    Asao-ku, Kawasaki-shi, Kanagawa 210-8550 (JP)
  • Yuasa, Shinji
    Tsukuba-shi Ibaraki (JP)

(74) Representative: Hatzmann, Martin et al
Vereenigde Johan de Wittlaan 7
2517 JR Den Haag
2517 JR Den Haag (NL)

 
Remarks:
This application was filed on 08-01-2010 as a divisional application to the application mentioned under INID code 62.
 


(54) Magnetoresistance effect device and method of production of the same


(57) A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.