(19)

(11)

EP 2 176 879 A1

(12)

(43) Date of publication: 21.04.2010 Bulletin 2010/16 (21) Application number: 08771155.2 (22) Date of filing: 16.06.2008

(51) International Patent Classification (IPC):  H01L 21/31(2006.01) H01L 29/78(2006.01) H01L 21/336(2006.01) H01L 29/423(2006.01) (86) International application number: PCT/US2008/067079 (87) International publication number: WO 2009/017888 (05.02.2009 Gazette 2009/06)

(84) Designated Contracting States: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR Designated Extension States: AL BA MK RS (30) Priority: 30.07.2007 US 830331 (71) Applicant: Freescale Semiconductor, Inc. Austin, TX 78735 (US)	(72) Inventors: HEGDE, Rama I. Austin, Texas 78759 (US) SAMAVEDAM, Srikanth B. Fishkill, New York 12524 (US) (74) Representative: Ferro, Frodo Nunes et al Freescale Semiconductor, Inc. c/o Impetus IP Limited Suite 57a, Basepoint Business Park Caxton Close, Andover Hampshire SP10 3FG Hampshire SP10 3FG (GB)