ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCY..TRBGCZEEHUPLSK..HRIS..MTNO....SM..................JBDM Ver 1.7.2 (20 November 2019) - 2999001/02190039CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120210901W173deBibliographieenBibliographyfrBibliographieEP09176489.4200911192014033120180906enenen2008011556320081120KR2021090120213520100526201021202107212021292021020920210901202135H01L 33/44 20100101AFI20210125BHEP H01L 33/40 20100101ALI20210125BHEP deLichtemittierendes HalbleiterbauelementenSemiconductor light emitting devicefrDispositif électroluminescent semi-conducteurWO-A1-2006/006822WO-A1-2007/074969WO-A1-2008/131736US-A1- 2005 139 825US-A1- 2005 199 895US-A1- 2006 049 417US-A1- 2008 210 955Bae, Jung Hyeok54-6, Seooe-ri Goseong-eup Goseong-gunGyeongsangnam-doKRSuzhou Lekin Semiconductor Co., Ltd.10190695242500051EP168 Changsheng North RoadTaicang City, SuzhouCNPlasseraud IP10156805066, rue de la Chaussée d'Antin75440 Paris Cedex 09FRATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMKMTNLNOPLPTROSESISKSMTR20140122201404