<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd">
<ep-patent-document id="EP09174016B1" file="EP09174016NWB1.xml" lang="en" country="EP" doc-number="2190109" kind="B1" date-publ="20140903" status="n" dtd-version="ep-patent-document-v1-4">
<SDOBI lang="en"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCY..TRBGCZEEHUPLSK..HRIS..MTNO....SM..................</B001EP><B005EP>J</B005EP><B007EP>DIM360 Ver 2.41 (21 Oct 2013) -  2100000/0</B007EP></eptags></B000><B100><B110>2190109</B110><B120><B121>EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B1</B130><B140><date>20140903</date></B140><B190>EP</B190></B100><B200><B210>09174016.7</B210><B220><date>20091026</date></B220><B240><B241><date>20101122</date></B241></B240><B250>it</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>MI20081891</B310><B320><date>20081027</date></B320><B330><ctry>IT</ctry></B330></B300><B400><B405><date>20140903</date><bnum>201436</bnum></B405><B430><date>20100526</date><bnum>201021</bnum></B430><B450><date>20140903</date><bnum>201436</bnum></B450><B452EP><date>20140604</date></B452EP></B400><B500><B510EP><classification-ipcr sequence="1"><text>H02M   3/335       20060101AFI20140227BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>Steuervorrichtung für Gleichrichter von Schaltnetzteilen</B542><B541>en</B541><B542>Control device for rectifiers of switching converters.</B542><B541>fr</B541><B542>Dispositif de commande des redresseurs des convertisseurs de commutation</B542></B540><B560><B561><text>US-A1- 2003 021 128</text></B561><B561><text>US-A1- 2003 067 794</text></B561><B561><text>US-A1- 2003 081 433</text></B561><B561><text>US-A1- 2004 109 335</text></B561><B561><text>US-A1- 2004 169 498</text></B561><B561><text>US-B1- 6 191 964</text></B561><B561><text>US-B1- 7 109 688</text></B561><B561><text>US-B2- 7 184 280</text></B561></B560></B500><B700><B720><B721><snm>Adragna, Claudio</snm><adr><str>
Via Pellizza da Volpedo, 2</str><city>20052, Monza</city><ctry>IT</ctry></adr></B721><B721><snm>Ilardo, Santo</snm><adr><str>
Stradale Primosole, 50</str><city>95121, Catania</city><ctry>IT</ctry></adr></B721></B720><B730><B731><snm>STMicroelectronics Srl</snm><iid>101305507</iid><irf>08171/EP-ml</irf><adr><str>Via Olivetti 2</str><city>20864 Agrate Brianza</city><ctry>IT</ctry></adr></B731></B730><B740><B741><snm>Mittler, Enrico</snm><iid>100953542</iid><adr><str>Viale Lombardia 20</str><city>20131 Milano</city><ctry>IT</ctry></adr></B741></B740></B700><B800><B840><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IS</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LT</ctry><ctry>LU</ctry><ctry>LV</ctry><ctry>MC</ctry><ctry>MK</ctry><ctry>MT</ctry><ctry>NL</ctry><ctry>NO</ctry><ctry>PL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>SM</ctry><ctry>TR</ctry></B840><B880><date>20100526</date><bnum>201021</bnum></B880></B800></SDOBI>
<description id="desc" lang="en"><!-- EPO <DP n="1"> -->
<p id="p0001" num="0001">The present invention relates to a control device for rectifiers of switching converters, in particular of resonant converters.</p>
<p id="p0002" num="0002">Resonant converters are a vast class of forced switching converters characterised by the presence of a resonant circuit that actively participates in determining the input-output power flow. In such converters a circuit consisting of a power switching bridge or half-bridge (typically of power MOSFETs), powered by DC voltage, generates a square wave voltage which is applied to a resonant circuit tuned to the fundamental frequency of said square wave. In this manner, because of its selective characteristics, the resonant circuit responds principally to this fundamental component and to a negligible degree to higher-order harmonics. It follows that the circulating power can be modulated by varying the frequency of the square wave, while maintaining the duty cycle constant at 50%, and that, according to the configuration of the resonant circuit, the currents and/or voltages associated with the power flow will have a pattern that is sinusoidal or piecewise sinusoidal. These voltages and/or currents are rectified and filtered so as to supply DC power to the load. In mains network applications, for reasons tied to safety regulations, the rectifier-filter system that supplies power to the load is coupled to the resonant circuit by means of a transformer that provides the isolation between source and load required under the aforesaid regulations. As in all isolated network converters, in this case as well it is customary to distinguish between a primary side (i.e. relating to the primary winding of the transformer) connected to the input source and a secondary side (i.e. relating to the secondary winding - or secondary windings - of the transformer) which supplies power to the load via the rectifier-filter system.</p>
<p id="p0003" num="0003">At present, one of the resonant converters most widely used is the LLC resonant converter, especially the half-bridge version. This name derives<!-- EPO <DP n="2"> --> from the fact that the resonant circuit employs two inductors and one capacitor. The principle schematic of the half-bridge version is shown in <figref idref="f0001">figure 1</figref>, where a half-bridge of two transistors M1, M2 powered by an input voltage Vin and driven by a device 1, powers a series comprising a capacitor C, an inductance Ls and an inductance Lp, with a transformer 10 connected in parallel with the inductance Lp. The transformer has a secondary winding with a centre tap connected to ground GND, whereas the ends of the secondary winding are connected to rectifier diodes D1 and D2 having the cathodes connected together and to a parallel of a capacitor C1 and a resistance R, across which the output voltage Vout is present.</p>
<p id="p0004" num="0004">This converter, in addition to the typical advantages of resonant converters (waveforms without steep fronts, low switching losses of the power switches thank to "soft" switching), has significant advantages over converters which employ resonant circuits with only two reactive elements. In fact, said LLC converter is capable of working in a vast range of operating conditions with respect to input voltage and output current, including no load conditions, with a relatively small frequency variation; it has the possibility of achieving "soft" switching operations with all power switches in all operating conditions with respect to input voltage and output current. In fact as regards the power MOSFETs on the primary side one has zero voltage turn-on (ZVS - Zero Voltage Switching), hence zero associated losses, whereas as regards the rectifiers on the secondary side one has zero current turn-on and turn-off (ZCS, Zero Current Switching) and hence an absence of reverse recovery and the phenomena associated therewith. The turn-off switching losses of the primary side power MOSFETs are also rather low. Furthermore a further advantage is magnetic integration, i.e. the possibility of combining all of the magnetic devices (inductances and transformer) in a single physical component.</p>
<p id="p0005" num="0005">A synchronous rectifier implementing soft switching and preventing reverse power flow based on a safety time is described in <patcit id="pcit0001" dnum="US6191964B"><text>US 6191964</text></patcit>.</p>
<p id="p0006" num="0006">As a consequence of such properties, these resonant converters are characterised by a high conversion efficiency (&gt;95% is easily achievable),<!-- EPO <DP n="3"> --> an ability to work at high frequencies, low generation of EMI (ElectroMagnetic Interference) and, finally, a high power density (which means the possibility of constructing conversion systems of reduced volume).</p>
<p id="p0007" num="0007">In current types of converter circuits a high conversion efficiency and high power density are required, as in the case, for example, of the AC-DC adaptors of notebooks. LLC resonant converters are at present the converters that best meet such requirements.</p>
<p id="p0008" num="0008">However, the maximum efficiency achievable is limited by the losses in the rectifiers on the secondary side of the converter, which account for over 60% of total losses.</p>
<p id="p0009" num="0009">It is known that in order to significantly reduce the losses connected to secondary rectification, recourse can be made to the so-called "synchronous rectification" technique, in which one rectifier diode is replaced by a power MOSFET, with a suitably low turn-on resistance, such that the voltage drop across it is significantly lower than that across the diode, and driven in such a manner as to be functionally equivalent to the diode. This technique is widely adopted in traditional converters, especially in flyback and forward converters, for which there also exist commercially available dedicated integrated control circuits. There is an increasingly pressing need to adopt this technique in resonant converters as well, in particular in LLC converters, in order to enhance their efficiency as much as possible. <figref idref="f0001">Figure 2</figref> shows the converter of <figref idref="f0001">figure 1</figref> in the version with secondary synchronous rectifiers; in this case, in the place of diodes D1 and D2 there are two transistors T1 and T2, suitably driven by two signals G1 and G2 and connected between the terminals of the two parts of the centre-tapped secondary winding connected to ground GND, while the parallel of C1 and R is disposed between the centre tap of the secondary winding and ground GND. From a functional viewpoint there is no difference, as compared to the schematic in <figref idref="f0001">Figure 1</figref>. At the present state of the art, there exists no commercially available integrated control circuit specifically dedicated to<!-- EPO <DP n="4"> --> driving synchronous rectifiers for LLC resonant converters.</p>
<p id="p0010" num="0010">To drive the power MOSFETs T1 and T2 as synchronous rectifiers in a resonant converter use is sometimes made of methods borrowed from traditional PWM controlled converters, based, that is, on the "self-driven" approach, in which the drive voltage of the synchronous rectifiers is obtained through the auxiliary windings of the transformer, and the "primary-driven" approach, in which the same signal which drives the primary side power MOSFET gates is used to drive the gates of the synchronous rectifiers on the secondary side. Both methods present major drawbacks. In the case of the self-driven approach, the drive voltage does not have steep fronts which determine fast switching (necessary especially at turn-off) so that, due to the delays, current reversals can be observed in the synchronous rectifiers. These reversals, by acting as a dummy load, discharge the output capacitors, thereby increasing the output voltage ripple and impairing efficiency at medium-low loads, a parameter that is of hardly negligible importance given the most recent legislation regarding the reduction of consumption. In addition, the current regime in the transformer and in the resonant circuit is altered and in certain conditions a loss of ZVS can be observed, with consequences that may range from a moderate increase in power dissipation in the primary-side power MOSFETs to the destruction thereof due to triggering of the parasitic bipolar transistor intrinsic to the structure of the power MOSFETs. In the case of the "primary-driven" approach, the converter functions correctly as long as the conduction of current in each synchronous rectifier occupies the entire switching half-period (CCM, Continuous Conduction Mode). Otherwise, that is if the conduction of current to the secondary winding occupies only a fraction of the switching half-period (DCM, Discontinuous Conduction Mode) the converter will no longer work correctly. In fact, if the same signal is used for the primary-side MOSFETs and the synchronous rectifiers, the latter will remain turned on even if the current falls to zero before<!-- EPO <DP n="5"> --> completion of the half-cycle, resulting in a reversal of current along with the aforesaid drawbacks. This constitutes a severe limitation to the operating capabilities of the converter: in order to avoid working in DCM, not only is there the constraint of working within a narrow operating range, but it is also necessary for the load never to fall below a certain minimum value because, like all converters, also the LLC resonant converter tends to work in DCM, in the sense described just above, under a low load. Recently, more refined techniques have been developed with the aim of improving the drive logic of secondary synchronous rectifiers in this particular topology. Examples of these techniques are described in patents <patcit id="pcit0002" dnum="US7184280B"><text>US7184280</text></patcit> and <patcit id="pcit0003" dnum="US7193866B"><text>US7193866</text></patcit>. In both cases the driving signals for the primary side power MOSFETs and for the synchronous rectifiers are generated by a single control circuit, which establishes their mutual relation. The fundamental drawback of such methods is that one or the other of the driving signals must cross the isolation barrier between the primary and secondary sides and hence the use of an additional transformer is necessary. In addition to this, neither of the two methods takes into account the fact that the current across the secondary diodes (and thus also in the synchronous rectifiers, if appropriately controlled) may be null not only in the final part of each switching half-cycle but also in the initial part. A final aspect, which is taken marginally into consideration in <patcit id="pcit0004" dnum="US7184280B"><text>US7184280</text></patcit>, is the advisability of suspending the synchronous rectification when the output current is low and entrusting the secondary rectification function either to the body diodes of the power MOSFETs used as synchronous rectifiers or Schottky diodes connected in anti-parallel with said synchronous rectifiers. In fact, with low currents, the reduction in losses associated with conduction across the turn-on resistance (as compared to the losses across the diode) is cancelled out by the loss of power used to drive the synchronous rectifiers.</p>
<p id="p0011" num="0011">In view of the state of the art, the object of the present invention is to provide a control device for rectifiers of switching converters which enables<!-- EPO <DP n="6"> --> the rectifier to be driven in an autonomous manner, i.e. without any direct connection with the controller that provides driving signals of the transistor of the switching converter. In particular, where resonant converters are concerned, this avoids the use of an additional transformer to transfer the driving signals across the primary-secondary side isolation barrier.</p>
<p id="p0012" num="0012">According to the present invention, this object is achieved by means of a control device for a rectifier of a switching converter as defined in claim 1.</p>
<p id="p0013" num="0013">Thanks to the present invention it is possible to provide a control device for a rectifier of a switching converter, in particular for a resonant converter, which allows said rectifier to be driven in a manner such as to faithfully reproduce the behaviour of the rectifier diodes from the viewpoint of the currents in the transformer. Said control device is preferably able to autonomously recognise low load conditions for the converter and, in such a case, suspend driving of the rectifier in order to reduce the associated losses and resume driving as soon as the output current increases.</p>
<p id="p0014" num="0014">Said control device must therefore increase the conversion efficiency of an LLC-type resonant converter across a range of operating conditions as wide as possible.</p>
<p id="p0015" num="0015">The characteristics and advantages of the present invention will become apparent from the following detailed description of an embodiment thereof, illustrated solely by way of non-limitative example in the appended<!-- EPO <DP n="7"> --> drawings, in which:
<ul id="ul0001" list-style="none" compact="compact">
<li><figref idref="f0001">figure 1</figref> is a diagram of an LLC-type resonant converter with a centre-tapped secondary winding and full-wave rectification by means of diodes according to the known art;</li>
<li><figref idref="f0001">figure 2</figref> is a diagram of an LLC-type resonant converter with a centre-tapped secondary winding and full-wave rectification by means of synchronous rectifiers according to the known art;</li>
<li><figref idref="f0002">figure 3</figref> shows a block diagram of the control device for a rectifier of a switching converter according to the present invention;</li>
<li><figref idref="f0002">figure 4</figref> is a more detailed diagram of a block of the control device of <figref idref="f0002">figure 3</figref>;</li>
<li><figref idref="f0003">figure 5</figref> is a more detailed diagram of another block of the device of <figref idref="f0002">figure 3</figref>;</li>
<li><figref idref="f0003">figure 6</figref> is a state machine relative to the functioning of the circuit block of <figref idref="f0003">figure 5</figref>;</li>
<li><figref idref="f0004">figure 7</figref> is a more detailed diagram of a further block of the device of <figref idref="f0002">figure 3</figref>;</li>
<li><figref idref="f0004">figure 8</figref> is a state machine relative to the functioning of the circuit block of <figref idref="f0004">figure 7</figref>.</li>
</ul></p>
<p id="p0016" num="0016">With reference to <figref idref="f0002">figure 3</figref>, there is shown a control device for rectifiers of a switching converter, in particular rectifiers of resonant converters according to the present invention, and more particularly of LLC resonant converters as shown in <figref idref="f0001">figure 2</figref>. The LLC resonant converter is powered by a voltage Vin, preferably a DC voltage, and comprises a transformer 10 and an LLC resonant network (consisting of the inductances Ls and Lp and the capacitor C) coupled to the transformer 10, which has a primary winding 101 and a centre-tapped secondary winding 102; the transformer provides the output current lout of the converter. A rectifier comprising two transistors T1, T2 is coupled to the transformer 10, in particular to the secondary winding 102 of the transformer; more<!-- EPO <DP n="8"> --> particularly, the transistors T1 and T2 are connected between the terminals of the two parts of the centre-tapped secondary winding 102 and ground GND. Said converter comprises a control device for the rectifier.</p>
<p id="p0017" num="0017">Said control device comprises a block 100 capable of detecting the start and end of each converter switching half-cycle and of measuring the length thereof and a block 200 suitable for generating a signal EN-SR for turning on the transistor T1 or T2 after a given number n of measured switching half-cycles of the converter and when the converter output current lout becomes greater than a reference current Iref. The control device preferably comprises a block 300 serving to impose the duration of the turn-on interval of the transistor T1 and of the transistor T2.</p>
<p id="p0018" num="0018">The block 100 has as its input parameters the voltages Vt1 and Vt2 across the drain terminals of the power MOSFETs T1, T2 used as synchronous rectifiers in the LLC converter of <figref idref="f0001">figure 2</figref> and from the block 300 it receives a set of signals A0, A1..An indicative of the operating state of the aforesaid block within each switching half-cycle. Preferably, the block 100 receives as input a logical signal PG indicative of the operational or non-operational state of the resonant converter. The voltages Vt1 and Vt2 can preferably be read using the RDS(on) of T1 and T2, that is the sense resistors Rs connected in series to the drain terminals of the transistors T1 and T2 as shown in <figref idref="f0002">figure 3</figref>.</p>
<p id="p0019" num="0019">The output of the block 100 consists of a set of signals B0, B1..Bn, which may be analogue and/or digital depending on the configuration of the block 100. The start and end of each half-cycle is preferably obtained through means 111, 112 suitable for comparing the voltages Vt1, Vt2 with the voltage references VR1, VR2, where it is assumed that VR2 &gt; VR1, as may be seen in <figref idref="f0002">figure 4</figref>. It is imposed that with Vt1&lt;VR1 and Vt2&gt;VR2 there will be the start of the current half-cycle in which the transistor T1 can be turned on whereas the transistor T2 must remain off and the end of the preceding half-cycle in which T2 may have been turned on while T1 had<!-- EPO <DP n="9"> --> remained off; it is further imposed that with Vt2&lt;VR1 and Vt1&gt;VR2 there will be the start of the current half-cycle in which the transistor T2 can be turned on and transistor T1 remains off and the end of the preceding half-cycle in which T1 may have be turned on while transistor T2 had remained off. The means 113 which receive the outputs of the comparison means 111 and 112 are suitable for generating a pulse signal B0 of finite duration upon the occurrence of one or the other of the aforesaid conditions, indicated as the first and second condition, where the leading edge FS of the pulse B0 is interpreted as the end of the current conduction half-cycle and the trailing edge FD of the pulse B0 is interpreted as the start of the subsequent conduction half-cycle. The duration of each half-cycle, like every other time interval of interest (e.g. duration of the rectifier conduction period or of a certain fraction of the half-cycle), can be measured using any technique of the known art, for example using a high frequency clock synchronised with the pulses B0 or with analogue ramps that are reset on the leading edges FS of the pulses B0 and released on the trailing edges FD of said pulses.</p>
<p id="p0020" num="0020">The block 200 has the function of determining, based on the external signals Vt1, Vt2 and the signals B0, B1...Bn originating from the block 100, whether, respectively in the first and second condition described above, the synchronous rectifiers T1 and T2 must be turned on or not. To avoid asymmetries in converter behaviour, it is preferable that the logic of the block 200 be such that if the transistor T1 has been turned on upon occurrence of the first condition, the transistor T2 will likewise be turned on upon occurrence of the second condition, whereas if T1 is maintained in the off state, T2 must also be maintained in the off state. This ensures symmetrical behaviour of the two synchronous rectifier MOSFETs and counteracts the natural trend of the LLC half-bridge to magnify the effects of any asymmetry in its operation. The output of the block 200 is a logical signal EN-SR which determines whether the transistors T1 and T2 can be turned on in their respective cycles or must be kept in the off state.<!-- EPO <DP n="10"> --></p>
<p id="p0021" num="0021">The operation of the block 200 can be defined by means of a diagram shown in <figref idref="f0003">figure 5</figref> and the state machine of <figref idref="f0003">figure 6</figref>.</p>
<p id="p0022" num="0022">When the signal PG is low the block 200 will be turned off, either because it is not sufficiently powered or because forcibly disabled from the outside; this state corresponds to state 19 of the state machine of <figref idref="f0003">figure 6</figref>. When the device turns on, i.e. with a high signal PG, because it is correctly powered and/or externally enabled to operate, all of the internal circuits will be turned on, the reference voltages will be generated and will adjust to their steady state value; this state corresponds to state 20 of the state machine of <figref idref="f0003">figure 6</figref>. The block 100, with a high signal PG, will become active, ready to identify the converter switching cycles and to measure the duration of each half-cycle. The block 100 also comprises means 115 (<figref idref="f0002">figure 4</figref>) able to count that a given number n (with n being a positive integer) of converter switching cycles have been identified and measured by the block 100; once the n converter switching cycles have been measured a signal B2 will be transmitted to the block 200, which is in state 30, i.e. the state in which the block 200 is turned on but in non-operational conditions.</p>
<p id="p0023" num="0023">The block 200 comprises means 202 serving to verify whether the converter output current Iout is greater than a given reference current Iref. In order to verify whether Iout&gt;Iref two criteria implemented by the means 203 or 204 can be used. The means 203 are able to measure, with reference to the transistor T1, when the interval of time Td elapsing between the start of a half-cycle and the moment at which the body diode of the transistor T1 begins conducting becomes shorter than a predetermined time Tt1, which may also be equal to a predetermined fraction α of duration of the switching half-cycle THC. The means 204 are instead able to measure, again with reference to the transistor T1, whether the interval of time Tc elapsing between the moment at which the body diode of the transistor T1 begins conducting and the moment at which it ceases conducting exceeds a predetermined time Tt2, which may also be equal to a predetermined<!-- EPO <DP n="11"> --> fraction α of duration of the switching half-cycle THC. It is possible to operate in the same manner with reference to the transistor T2. The time intervals Td and Tc are provided by the block 100 via the means 114 and are among the signals Bo, B1..Bn.</p>
<p id="p0024" num="0024">After n switching cycles have been measured and it has been verified that Iout&gt;Iref, the block 200 will emit the logical signal EN-SR via the block 205, i.e. it will bring it to the high logical level; the block 300 will receive said signal EN-SR and enable the turning on of one of the transistors T1 or T2. The state corresponding to the emission of the signal EN-SR is state 40.</p>
<p id="p0025" num="0025">In the preferable case where the duration of the switching half-cycle is used as the term of comparison, it is possible to set EN-SR high either at the moment of completion of the measurement of the time interval under observation (Td or Tc), using the duration of the preceding half-cycle as THC, or at the moment of completion of the current half-cycle, in which case the measurement of Td or Tc will be held in memory and the THC value just acquired will be used.</p>
<p id="p0026" num="0026">The high-low transition of the signal EN_SR, which occurs when the output current Iout becomes lower than the current Iref, can be determined instead on the basis of criteria which identically mirror those used to determine the low-high transition thereof and with the same means 203 or 204: that is to say, either when the interval of time Td elapsing between the start of a half-cycle and the moment at which the body diode T1 begins conducting exceeds a predetermined time or, preferably, a predetermined fraction αof duration of the switching half-cycle THC, or when the interval of time Tc elapsing between the moment at which the body diode TR1 begins conducting (or, alternatively, the moment when T1 is turned on) and the moment at which T1 is turned off becomes shorter than a predetermined time or, preferably, than a predetermined fraction α of duration of the switching half-cycle THC.</p>
<p id="p0027" num="0027">It is preferable to wait for a given period of time, i.e. it is preferable<!-- EPO <DP n="12"> --> that the condition for the transition of the signal EN-SR from high to low or vice-versa does not occur on the basis of the result of the comparison Td or Tc versus a percentage of THC in a single switching cycle, but rather that said result is confirmed for a certain number of switching cycles. This is implemented by means 206, which are configured to wait until the condition Iout&gt;Iref is verified for a given number n2 (where n2 is a positive integer) of switching cycles.</p>
<p id="p0028" num="0028">It is likewise preferable that said number of switching cycles be different according to whether the transition of the signal EN-SR from low to high or its transition from high to low is considered. The disabling of synchronous rectifiers is something that regards conversion efficiency, and hence the steady state, whereas the enabling thereof also involves aspects regarding the dynamic characteristics of the converter (transient responses to load variations).</p>
<p id="p0029" num="0029">Therefore, it is desirable that the transition of the signal EN-SR from high to low occurs when the condition Td &gt; α·THC (or Tc &lt; α·THC) is met for n1 consecutive switching cycles while the transition of the signal EN-SR from low to high occurs when the condition Td &lt; α·THC (or Tc &gt; α·THC) is met for n2 consecutive switching cycles, with n2 &lt; n1. The measurement of the numbers n1 and n2 of switching cycles is obtained via the means 206.</p>
<p id="p0030" num="0030">It is possible that the converter may function in an intermittent manner. In such a case, if the half-bridge stops switching, on the secondary side the transition fronts of the voltages Vt1 and Vt2 will cease to be present. It is thus desirable that, if the block 100 does not receive the synchronisation signals (and thus there is no longer the generation of pulses B0), the signal EN-SR be forced to low. This may be achieved either by using a "timeout" (for example, when there are no pulses B0 for longer than a predetermined time) or by bringing the signal EN_SR to low at the end of each conduction half-cycle and then bringing it back to high when the synchronism signal B0 is received and Iout&gt;Iref.<!-- EPO <DP n="13"> --></p>
<p id="p0031" num="0031">The block 300 has the function of controlling, based on the external signals Vt1, Vt2 and PG, the signal EN-SR originating from the block 200 and the signals B0, B1...Bn originating from the block 100, how long the synchronous rectifiers T1 and T2 must be turned on. In order to avoid asymmetries in the converter behaviour, it is preferable that the logic of the block 300 be such that if the transistor T1 has been turned on upon occurrence of the first condition, the transistor T2 is likewise turned on upon occurrence of the second condition, whereas if T1 is maintained in the off state, T2 must also be maintained in the off state.</p>
<p id="p0032" num="0032">The operation of the block 300 can be defined by means of a scheme shown in <figref idref="f0004">figure 7</figref> and a state machine, with reference solely to the transistor T1 in <figref idref="f0004">figure 8</figref>.</p>
<p id="p0033" num="0033">When the signal PG is low the block 300 will be turned off, either because it is not sufficiently powered or because forcibly disabled from the outside; this state corresponds to state 11 of the state machine of <figref idref="f0004">figure 7</figref>.</p>
<p id="p0034" num="0034">From state 11 there is a transition to state 12 when it is detected that the voltage Vt1 at the drain of T1 exceeds the reference value VR2 and this state will persist for the entire subsequent switching half-cycle in which T2 may conduct. From state 12 there will be a passage to state 13 on the leading edge of the pulse B0, i.e. when the start of the subsequent half-cycle is identified upon occurrence of the condition Vt1&lt;VR1 and Vt2&gt;VR2. During the time spent in this state, the block 300 will transmit, via means 301, a reset pulse A0 to the block 100 in order to reset all of the time measuring circuits 114, 115 of the block 100 following the acquisition of the duration of the switching half-cycle just determined.</p>
<p id="p0035" num="0035">On the trailing edge of the pulse B0 a passage to state 14 occurs.</p>
<p id="p0036" num="0036">The block 300 comprises means 302 suitable for turning off the device with a signal A1, that is, for going back from state 14 to state 11, if it is detected that the voltage Vt2 becomes lower than the reference value VR2. Should this occur, it means that the secondary voltages are reversing for<!-- EPO <DP n="14"> --> some reason and T2 will turn on as soon as the voltage Vt2 becomes lower than VR1. To avoid the simultaneous conduction of the two synchronous rectifiers, the transistor T1 is not turned on (interlocking logic).</p>
<p id="p0037" num="0037">When the signal EN-SR=1 and when it is detected that the body diode associated with the transistor T1 is turned on, a passage to state 15 occurs. The block 300 comprises means 303 capable of sensing that the body diode associated with the transistor T1 is turned on; such means 303 compare the voltage Vt1 with a negative reference Vneg (e.g. -0.5V) and deliver an output signal A2. The ceasing of conduction of the body diode of the transistor T1 can be detected in the same way.</p>
<p id="p0038" num="0038">In order to be sure that the body diode of the transistor T1 is not turned on due to a spike, it is preferable that the passage to state 15 occurs when the turn-on condition is confirmed for at least a predetermined time period TH; this is ensured by the same means 303. The value of TH represents a compromise between the necessity of masking spikes and that of not overly delaying the turning on of the transistor T1, which would increase the conduction losses and impair efficiency.</p>
<p id="p0039" num="0039">The state remains in state 15 for a minimum time TONmin, during which the gate driver G1 will definitely be high and, accordingly, the transistor T1 will definitely be turned on; at the end of this time the passage to state 16 occurs.</p>
<p id="p0040" num="0040">From this state it is possible to evolve toward state 11, in the case where the signal PG is low, or where the voltage Vt2 becomes lower than the reference value VR2 (interlocking logic), or where the voltage Vt1 becomes positive or null; the comparison between the voltage Vt2 and the voltage VR2 takes place via the comparison means 112 of the block 100.</p>
<p id="p0041" num="0041">The transition from state 16 to state 17 is driven by the block 100 after a predetermined time Ts, which may also be equal to a percentage of the preceding switching half-cycle of the transistor T1 or of the transistor T2. The time Ts is set by the same means 115.<!-- EPO <DP n="15"> --></p>
<p id="p0042" num="0042">From state 17 the state may evolve toward state 11 if the voltage Vt1 becomes positive or null (reversal of current in the synchronous rectifier) or if Vt2 becomes lower than the reference value VR2 (interlocking logic); or else it may evolve toward a state 18 or a state 19. The decision as to the transition to be effected will be made at the moment the block 100 transmits a signal Tm, originating from the means 115 and corresponding to one half of the duration of the switching half-cycle. At this moment the voltage Vt1 will be compared with a negative reference value Vth close to zero (e.g. -25 mV) via means 305.</p>
<p id="p0043" num="0043">If the voltage Vt1 &lt; Vth, there will be a transition to state 18, otherwise to state 19. At the halfway point of the switching half-cycle the current across the transistor T1 has not yet reached the peak value and is therefore still on the rise. State 18 will thus be reached when the current across the transistor T1 is of sufficient entity to give rise to a voltage drop greater than |vth| across its resistance RDSon, tha is the resistance between the drain and source terminals when the transistor is turned on, whereas state 19 will be reached when the current across T1 is not of sufficient entity and the voltage across its RDSon is lower than |Vth|. It is assumed that, in the former case, the converter is working in one of the modes associated with a high current regime, where the current derivative is also rather high, and that, in the latter case, it is working in one of the modes associated with a low current regime, where the derivatives, too, are less accentuated.</p>
<p id="p0044" num="0044">In the first case (Vt1&lt;Vth), in order to avoid or minimise the current reversal in T1, it is advisable to turn off the latter in advance relative to the moment at which the current actually falls to zero; this is done so as to take into account the inevitable propagation delays of the zero and T1 turn-off sensing circuits. In fact, in this case T1 will be turned off and will pass from state 18 to state 11 when Vt1 &gt; Vth.</p>
<p id="p0045" num="0045">In the second case (Vt1&gt;Vth), the effect of the propagation delays is more limited and it is therefore not deemed necessary to turn off T1 in<!-- EPO <DP n="16"> --> advance; T1 will be turned off as soon as the zero sensing circuits detect that Vt1 ≥0, an event that marks the passage from state 19 to state 11; the block 300 thus comprises means 306 serving to receive the output signal from the means 305 and able to turn off the transistor T1 by means of a signal Gloff if the voltage drop across the resistance RDSon of the transistor T1 is greater than |Vth|. The advantage of this differentiation of decisions is that, under intermediate loads, the conduction of transistor T1 will not be ended too early (halfway through the period), losing precisely the part in which the current is greatest. Obviously, starting off either from state 18 or state 19, the detection of the condition Vt2 &lt; VR2 (interlocking logic) would lead in any case to state 11.</p>
<p id="p0046" num="0046">The decision process relative to the control of the synchronous rectifier T2 can be described by a state machine identical to the one considered for the transistor T1, except, possibly, for the fact that during its cycles the signal EN-SR is not updated.</p>
<p id="p0047" num="0047">The control device according to the invention can be used for any rectifier of a switching converter in which it is necessary to rectify the output current of the converter.</p>
</description>
<claims id="claims01" lang="en"><!-- EPO <DP n="17"> -->
<claim id="c-en-01-0001" num="0001">
<claim-text>Control device for a rectifier of a switching converter, said converter being supplied with an input voltage and being adapted to provide an output current (Iout), said rectifier (T1, T2) being adapted to rectify said output current (Iout) of the converter and comprising at least one transistor (T1), said control device (100, 200, 300) being adapted to drive said at least one transistor, <b>characterized by</b> comprising first means (100) adapted to detect the start and the end of each switching semi-cycle of the converter and being adapted to measure the duration of each switching semi-cycle of the converter, second means (200) adapted to generate a signal (EN-SR) for the turning on of said transistor when the output current (Iout) of the converter is greater than a reference current (Iref) and after a delay, set by the second means and made up of a given number (n) of measured switching semi-cycles of the converter, is passed.</claim-text></claim>
<claim id="c-en-01-0002" num="0002">
<claim-text>Control device according to claim 1, <b>characterized in that</b> said converter is a resonant converter and comprises a transformer (10) with a primary and secondary winding and a resonant network (LLC) coupled to the primary winding of the transformer and to the input voltage (Vin), said secondary winding being of the centre tap type and being coupled with the rectifier, said rectifier comprising at least one single rectification transistor pair (T1, T2) of which each transistor is provided with a body diode, said control device being adapted to drive said transistor pair and to generate a signal for turning on one (T1) of said transistor pair.</claim-text></claim>
<claim id="c-en-01-0003" num="0003">
<claim-text>Control device according to claim 1 or 2, <b>characterized by</b> comprising third means (300) adapted to receive said turning on signal (EN-SR) at the output of said second means and adapted to set the turning on instant and the turning off instant of said transistor.</claim-text></claim>
<claim id="c-en-01-0004" num="0004">
<claim-text>Control device according to claim 3, <b>characterized in that</b> said third means (300) are adapted to determine said turning on instant of said transistor when the voltage (Vt1) detected between the terminals of the<!-- EPO <DP n="18"> --> current path of the turned on transistor is lower than a given voltage (Vneg).</claim-text></claim>
<claim id="c-en-01-0005" num="0005">
<claim-text>Control device according to claim 3, <b>characterized in that</b> said third means (300) are adapted to determine said turning on instant of said transistor after a time delay period (Th) from detecting the turning on instant.</claim-text></claim>
<claim id="c-en-01-0006" num="0006">
<claim-text>Control device according to claim 3, <b>characterized in that</b> said third means comprising further means (305) adapted to turn off the control device if the voltage detected between the terminals of the current path of the turned on transistor is lower than a further given voltage (Vth) at the time instant (Tm) corresponding to half the duration of the switching semi-cycle.</claim-text></claim>
<claim id="c-en-01-0007" num="0007">
<claim-text>Control device according to claim 2, <b>characterized in that</b> said transistor pair comprises a first (T1) and a second (T2) MOSFET transistor, said first means (100) comprising means (Rs) adapted to detect the voltages (Vt1, Vt2) at the drain terminal of said transistor pair and means (111, 112) adapted to compare said voltages with a first (VR1) and a second (VR2) reference voltage, with said second voltage (VR2) higher than said first voltage (VR1), said first means (100) being adapted to send a pulse (B0 to said second means (200) when the voltage (Vt1) at the drain terminal of the first transistor (T1) is lower than the first reference voltage (VR1) while the voltage (Vt2) at the drain terminal of the second transistor (T2) is higher than the second reference voltage (VR2) or when the voltage (Vt2) at the drain terminal of the second transistor (T1) is lower than the first reference voltage (VR1) while the voltage (Vt1) at the drain terminal of the first transistor (T1) is higher than the second reference voltage (VR2).</claim-text></claim>
<claim id="c-en-01-0008" num="0008">
<claim-text>Control device according to claim 7, <b>characterized in that</b> said first means (100) comprise means (115) adapted to measure the duration of said pulse (B0)</claim-text></claim>
<claim id="c-en-01-0009" num="0009">
<claim-text>Control device according to claim 1 or 2, <b>characterized in that</b> said second means (200) are adapted to determine if the output current (Iout) of the converter becomes higher than a reference current (Iref) when the time<!-- EPO <DP n="19"> --> period (Td) between the start instant of a switching semi-cycle of the converter and the instant wherein the body diode of said at least one transistor begins to conduct is lower than a given time period (Tt1).</claim-text></claim>
<claim id="c-en-01-0010" num="0010">
<claim-text>Control device according to claim 1 or 2, <b>characterized in that</b> said second means (200) are adapted to determine if the output current (Iout) of the converter becomes higher than a reference current (Iref) when the time period (Tc) between the instant wherein the body diode of said at least one transistor begins to conduct and the time instant wherein said diode stops to conduct is higher than a given time period (Tt2).</claim-text></claim>
<claim id="c-en-01-0011" num="0011">
<claim-text>Control device according to claim 1 or 2, <b>characterized in that</b> said second means (200) comprise means adapted to turn off said previously turned on transistor when the output current of the converter becomes lower than the reference current.</claim-text></claim>
<claim id="c-en-01-0012" num="0012">
<claim-text>Control device according to claim 1 or 2, <b>characterized in that</b> said second means are adapted to generate said turning on signal (EN-SR) when the output current (Iout) of the converter is kept higher than said reference current (Iref) for a given number (n2) of measured switching semi-cycles of the converter.</claim-text></claim>
<claim id="c-en-01-0013" num="0013">
<claim-text>Switching resonant converter having an input voltage and comprising a transformer (10) adapted to provide the output current of the converter, said transformer (10) comprising a primary and secondary winding and a resonant network (LLC) coupled to the primary winding of the transformer and the input voltage and a rectifier coupled to the secondary winding and adapted to rectify said output current of the converter, said secondary winding being of the centre tap type and said rectifier comprising at least one single rectification transistor pair (T1, T2), said converter comprising a control device (100, 200, 300) of the rectifier according to any one of the preceding claims.</claim-text></claim>
<claim id="c-en-01-0014" num="0014">
<claim-text>Control method of a rectifier of a switching converter, said converter being supplied with an input voltage and being adapted to provide an output<!-- EPO <DP n="20"> --> current (Iout), said rectifier (T1, T2) being adapted to rectify said output current (Iout) of the converter and comprising at least one transistor (T1), said control device (100, 200, 300) being adapted to drive said at least one transistor, <b>characterized by</b> comprising detecting the start and the end of each switching semi-cycle of the converter and measuring the duration thereof, generating a signal (EN-SR) for the turning on of said transistor after a delay, made up of a given number (n) of measured switching semi-cycles of the converter is passed, and when the output current (Iout) of the converter is greater than a reference current (Iref).</claim-text></claim>
</claims>
<claims id="claims02" lang="de"><!-- EPO <DP n="21"> -->
<claim id="c-de-01-0001" num="0001">
<claim-text>Steuervorrichtung für einen Gleichrichter eines Schaltwandlers, wobei dem Wandler eine Eingangsspannung zugeführt wird und er dafür ausgebildet ist, einen Ausgangsstrom (lout) bereitzustellen, wobei der Gleichrichter (T1, T2) dafür ausgebildet ist, den Ausgangsstrom (lout) des Wandlers gleichzurichten und wenigstens einen Transistor (T1) aufweist, wobei die Steuervorrichtung (100, 200, 300) dafür ausgebildet ist, den wenigstens einen Transistor zu steuern, <b>dadurch gekennzeichnet, dass</b> sie aufweist eine erste Einrichtung (100), die dafür ausgebildet ist, den Anfang und das Ende jedes Schalt-Halbzyklus des Wandlers zu detektieren, und dafür ausgebildet ist, die Dauer jedes Schalt-Halbzyklus des Wandlers zu messen, und eine zweite Einrichtung (200), die dafür ausgebildet ist, ein Signal (EN-SR) zum Einschalten des Transistors zu erzeugen, wenn der Ausgangsstrom (lout) des Wandlers größer ist als ein Referenzstrom (Iref) und nachdem eine Verzögerung, die von der zweiten Einrichtung eingestellt wird und durch eine vorgegebene Anzahl (n) von gemessenen Schalt-Halbzyklen des Wandlers gebildet ist, vergangen ist.</claim-text></claim>
<claim id="c-de-01-0002" num="0002">
<claim-text>Steuervorrichtung nach Anspruch 1, <b>dadurch gekennzeichnet, dass</b> der Wandler ein Resonanzwandler ist und einen Transformator (10) mit einer Primär- und einer Sekundärwicklung und ein Resonanz-Netzwerk (LLC) aufweist, das mit der Primärwicklung des Transformators und mit der Eingangsspannung (Vin) gekoppelt ist, wobei die Sekundärwicklung vom Mittelabgrifftyp ist und mit dem Gleichrichter gekoppelt ist, wobei der Gleichrichter wenigstens ein einzelnes Gleichrichtungs-Transistorenpaar (T1, T2) aufweist, von dem jeder Transistor mit einer Body-Diode versehen ist, wobei die Steuervorrichtung dafür ausgebildet ist, das Transistorenpaar zu steuern und ein Signal zum Einschalten eines Transistors (T1) des Transistorenpaars zu erzeugen.<!-- EPO <DP n="22"> --></claim-text></claim>
<claim id="c-de-01-0003" num="0003">
<claim-text>Steuervorrichtung nach Anspruch 1 oder 2, <b>dadurch gekennzeichnet, dass</b> sie eine dritte Einrichtung (300) aufweist, die dafür ausgebildet ist, das Einschaltsignal (EN-SR) am Ausgang der zweiten Einrichtung zu empfangen, und dafür ausgebildet ist, den Einschaltzeitpunkt und den Ausschaltzeitpunkt des Transistors einzustellen.</claim-text></claim>
<claim id="c-de-01-0004" num="0004">
<claim-text>Steuervorrichtung nach Anspruch 3, <b>dadurch gekennzeichnet, dass</b> die dritte Einrichtung (300) dafür ausgebildet ist, den Einschaltzeitpunkt des Transistors zu bestimmen, wenn die zwischen den Anschlüssen des Strompfads des eingeschalteten Transistors detektierte Spannung (Vt1) niedriger als eine vorgegebene Spannung (Vneg) ist.</claim-text></claim>
<claim id="c-de-01-0005" num="0005">
<claim-text>Steuervorrichtung nach Anspruch 3, <b>dadurch gekennzeichnet, dass</b> die dritte Einrichtung (300) dafür ausgebildet ist, den Einschaltzeitpunkt des Transistors nach einer Zeitverzögerungsperiode (Th) ab dem Detektieren des Einschaltzeitpunkts zu bestimmen.</claim-text></claim>
<claim id="c-de-01-0006" num="0006">
<claim-text>Steuervorrichtung nach Anspruch 3, <b>dadurch gekennzeichnet, dass</b> die dritte Einrichtung eine weitere Einrichtung (305) aufweist, die dafür ausgebildet ist, die Steuervorrichtung auszuschalten, wenn die zwischen den Anschlüssen des Strompfads des eingeschalteten Transistors detektierte Spannung zu dem Zeitpunkt (Tm), der der halben Dauer des Schalt-Halbzyklus entspricht, niedriger ist als eine weitere vorgegebene Spannung (Vth).</claim-text></claim>
<claim id="c-de-01-0007" num="0007">
<claim-text>Steuervorrichtung nach Anspruch 2, <b>dadurch gekennzeichnet, dass</b> das Transistorenpaar einen ersten (T1) und einen zweiten (T2) MOSFET-Transistor aufweist, wobei die erste Einrichtung (100) eine Einrichtung (Rs), die dafür ausgebildet ist, die Spannungen (Vt1, Vt2) an dem Drain-Anschluss des Transistorpaars zu detektieren, und eine Einrichtung (111, 112), die dafür ausgebildet ist, die Spannungen mit einer ersten (VR1) und einer zweiten (VR2) Referenzspannung zu vergleichen, wobei die zweite Spannung (VR2) höher ist als die erste Spannung (VR1), aufweist, wobei die erste Einrichtung (100) dafür ausgebildet ist, einen Impuls (B0) an die zweite Einrichtung (200) zu schicken, wenn die Spannung (Vt1) am Drain-Anschluss des ersten Transistors (T1) niedriger ist als die erste Referenzspannung (VR1),<!-- EPO <DP n="23"> --> während die Spannung (Vt2) am Drain-Anschluss des zweiten Transistors (T2) höher ist als die zweite Referenzspannung (VR2), oder wenn die Spannung (Vt2) am Drain-Anschluss des zweiten Transistors (T1) niedriger ist als die erste Referenzspannung (VR1), während die Spannung (Vt1) am DrainAnschluss des ersten Transistors (T1) höher ist als die zweite Referenzspannung (VR2).</claim-text></claim>
<claim id="c-de-01-0008" num="0008">
<claim-text>Steuervorrichtung nach Anspruch 7, <b>dadurch gekennzeichnet, dass</b> die erste Einrichtung (100) eine Einrichtung (115) aufweist, die dafür ausgebildet ist, die Dauer des Impulses (B0) zu messen.</claim-text></claim>
<claim id="c-de-01-0009" num="0009">
<claim-text>Steuervorrichtung nach Anspruch 1 oder 2, <b>dadurch gekennzeichnet, dass</b> die zweite Einrichtung (200) dafür ausgebildet ist, zu bestimmen, ob der Ausgangsstrom (lout) des Wandlers höher wird als ein Referenzstrom (Iref), wenn die Zeitperiode (Td) zwischen dem Anfangszeitpunkt eines Schalt-Halbzyklus des Wandlers und dem Zeitpunkt, zu dem die Body-Diode des wenigstens einen Transistors zu leiten beginnt, kürzer ist als eine vorgegebene Zeitperiode (Tt1).</claim-text></claim>
<claim id="c-de-01-0010" num="0010">
<claim-text>Steuervorrichtung nach Anspruch 1 oder 2, <b>dadurch gekennzeichnet, dass</b> die zweite Einrichtung (200) dafür ausgebildet ist, zu bestimmen, ob der Ausgangsstrom (lout) des Wandlers höher wird als ein Referenzstrom (Iref), wenn die Zeitperiode (Tc) zwischen dem Zeitpunkt, zu dem die Body-Diode des wenigstens einen Transistors zu leiten beginnt, und dem Zeitpunkt, zu dem die Diode aufhört zu leiten, länger ist als eine vorgegebene Zeitperiode (Tt2).</claim-text></claim>
<claim id="c-de-01-0011" num="0011">
<claim-text>Steuervorrichtung nach Anspruch 1 oder 2, <b>dadurch gekennzeichnet, dass</b> die zweite Einrichtung (200) eine Einrichtung aufweist, die dafür ausgebildet ist, den zuvor eingeschalteten Transistor auszuschalten, wenn der Ausgangsstrom des Wandlers niedriger wird als der Referenzstrom.</claim-text></claim>
<claim id="c-de-01-0012" num="0012">
<claim-text>Steuervorrichtung nach Anspruch 1 oder 2, <b>dadurch gekennzeichnet, dass</b> die zweite Einrichtung dafür ausgebildet ist, das Einschaltsignal (EN-SR) zu erzeugen, wenn der Ausgangsstrom (lout) des Wandlers für eine vorgegebene<!-- EPO <DP n="24"> --> Anzahl (n2) von gemessenen Schalt-Halbzyklen des Wandlers höher gehalten wird als der Referenzstrom (Iref).</claim-text></claim>
<claim id="c-de-01-0013" num="0013">
<claim-text>Schaltresonanzwandler, der eine Eingangsspannung hat und einen Transformator (10) aufweist, der dafür ausgebildet ist, den Ausgangsstrom des Wandlers bereitzustellen, wobei der Transformator (10) eine Primär- und eine Sekundärwicklung und ein Resonanznetzwerk (LLC) aufweist, das mit der Primärwicklung des Transformators und der Eingangsspannung gekoppelt ist, und einen Gleichrichter, der mit der Sekundärwicklung gekoppelt ist und dafür ausgebildet ist, den Ausgangsstrom des Wandlers gleichzurichten, wobei die Sekundärwicklung vom Mittelabgrifftyp ist und der Gleichrichter wenigstens ein einzelnes Gleichrichtungs-Transistorenpaar (T1, T2) aufweist, wobei der Wandler eine Steuervorrichtung (100, 200, 300) des Gleichrichters nach einem der vorhergehenden Ansprüche aufweist.</claim-text></claim>
<claim id="c-de-01-0014" num="0014">
<claim-text>Steuerverfahren für einen Gleichrichter eines Schaltwandlers, wobei dem Schaltwandler eine Eingangsspannung zugeführt wird und er dafür ausgebildet ist, einen Ausgangsstrom (lout) bereitzustellen, wobei der Gleichrichter (T1, T2) dafür ausgebildet ist, den Ausgangsstrom (lout) des Wandlers gleichzurichten und wenigstens einen Transistor (T1) aufweist, wobei die Steuervorrichtung (100, 200, 300) dafür ausgebildet ist, den wenigstens einen Transistor zu steuern, <b>dadurch gekennzeichnet, dass</b> es das Detektieren des Anfangs und des Endes jedes Schalt-Halbzyklus des Wandlers, das Messen der Dauer davon und das Erzeugen eines Signals (EN-SR) zum Einschalten des Transistors, nachdem eine Verzögerung, die durch eine vorgegebene Anzahl (n) von gemessenen Schalt-Halbzyklen des Wandlers gebildet ist, vergangen ist, und wenn der Ausgangsstrom (lout) des Wandlers größer ist als ein Referenzstrom (Iref), beinhaltet.</claim-text></claim>
</claims>
<claims id="claims03" lang="fr"><!-- EPO <DP n="25"> -->
<claim id="c-fr-01-0001" num="0001">
<claim-text>Dispositif de commande pour un redresseur d'un convertisseur à découpage, ledit convertisseur recevant une tension d'entrée et étant adapté pour fournir un courant de sortie (Iout), ledit redresseur (T1, T2) étant adapté pour redresser ledit courant de sortie (Iout) du convertisseur et comprenant au moins un transistor (T1), ledit dispositif de commande (100, 200, 300) étant adapté pour piloter ledit au moins un transistor, <b>caractérisé en ce qu'</b>il comprend un premier moyen (100) adapté pour détecter le début et la fin de chaque demi-cycle de commutation du convertisseur et étant adapté pour mesurer la durée de chaque demi-cycle de commutation du convertisseur, un deuxième moyen (200) adapté pour générer un signal (EN-SR) pour rendre passant ledit transistor quand le courant de sortie (Iout) du convertisseur est supérieur à un courant de référence (Iref) et après que se soit écoulé un délai, établi par le deuxième moyen et constitué d'un nombre donné (n) de demi-cycles de commutation mesurés du convertisseur.</claim-text></claim>
<claim id="c-fr-01-0002" num="0002">
<claim-text>Dispositif de commande selon la revendication 1, <b>caractérisé en ce que</b> ledit convertisseur est un convertisseur résonnant et comprend un transformateur (10) ayant un enroulement primaire et un enroulement secondaire et un réseau résonnant (LLC) couplé à l'enroulement primaire du transformateur et à la tension d'entrée (Vin), ledit enroulement secondaire étant du type à prise centrale et étant couplé au redresseur, ledit redresseur comprenant au moins une paire de transistors à simple redressement (T1, T2) pourvus chacun d'une diode de structure, ledit dispositif de commande étant adapté pour piloter ladite paire de transistors et pour générer un signal destiné à rendre passant l'un (T1) desdits deux transistors.</claim-text></claim>
<claim id="c-fr-01-0003" num="0003">
<claim-text>Dispositif de commande selon la revendication 1 ou 2, <b>caractérisé en ce qu'</b>il comprend un troisième moyen (300) adapté pour recevoir ledit signal de déblocage (EN-SR) à la sortie dudit deuxième moyen et adapté pour régler l'instant du déblocage et l'instant du blocage dudit transistor.</claim-text></claim>
<claim id="c-fr-01-0004" num="0004">
<claim-text>Dispositif de commande selon la revendication 3, <b>caractérisé en ce que</b> ledit troisième moyen (300) est adapté pour déterminer ledit<!-- EPO <DP n="26"> --> instant de déblocage dudit transistor quand la tension (Vt1) détectée entre les bornes du chemin de courant du transistor débloqué est inférieure à une tension donnée (Vneg).</claim-text></claim>
<claim id="c-fr-01-0005" num="0005">
<claim-text>Dispositif de commande selon la revendication 3, <b>caractérisé en ce que</b> ledit troisième moyen (300) est adapté pour déterminer ledit instant de déblocage dudit transistor après une période de retard (Th) à partir de l'instant de déblocage.</claim-text></claim>
<claim id="c-fr-01-0006" num="0006">
<claim-text>Dispositif de commande selon la revendication 3, <b>caractérisé en ce que</b> ledit troisième moyen comprend un moyen supplémentaire (305) adapté pour éteindre le dispositif de commande si la tension détectée entre les bornes du chemin de courant du transistor débloqué est inférieure à une autre tension donnée (Vth) à l'instant (Tm) correspondant à la moitié de la durée du demi-cycle de commutation.</claim-text></claim>
<claim id="c-fr-01-0007" num="0007">
<claim-text>Dispositif de commande selon la revendication 2, <b>caractérisé en ce que</b> ladite paire de transistors comprend un premier (T1) et un deuxième (T2) transistor MOSFET, ledit premier moyen (100) comprenant un moyen (Rs) adapté pour détecter les tensions (Vt1, Vt2) au niveau de la borne de drain de ladite paire de transistors et un moyen (111, 112) adapté pour comparer lesdites tensions avec une première (VR1) et une deuxième (VR2) tension de référence, ladite deuxième tension (VR2) étant supérieure à ladite première tension (VR1), ledit premier moyen (100) étant adapté pour envoyer une impulsion (B0) audit deuxième moyen (200) quand la tension (Vt1) au niveau de la borne de drain du premier transistor (T1) est inférieure est inférieure à la première tension de référence (VR1) tandis que la tension (Vt2) au niveau de la borne de drain du deuxième transistor (T2) est supérieure à la deuxième tension de référence (VR2) ou quand la tension (Vt2) au niveau de la borne de drain du deuxième transistor (T1) est inférieure à la première tension de référence (VR1) tandis que la tension (Vt1) au niveau de la borne de drain du premier transistor (T1) est supérieure à la deuxième tension de référence (VR2).</claim-text></claim>
<claim id="c-fr-01-0008" num="0008">
<claim-text>Dispositif de commande selon la revendication 7, <b>caractérisé en ce que</b> ledit premier moyen (100) comprend un moyen (115) adapté pour mesurer la durée de ladite impulsion (B0).<!-- EPO <DP n="27"> --></claim-text></claim>
<claim id="c-fr-01-0009" num="0009">
<claim-text>Dispositif de commande selon la revendication 1 ou 2, <b>caractérisé en ce que</b> ledit deuxième moyen (200) est adapté pour déterminer si le courant de sortie (Iout) du convertisseur devient supérieur à un courant de référence (Iref) quand la période temporelle (Td) entre l'instant de début d'un demi-cycle de commutation du convertisseur et l'instant où la diode de structure dudit au moins un transistor commence à conduire est inférieure à une période temporelle donnée (Tt1).</claim-text></claim>
<claim id="c-fr-01-0010" num="0010">
<claim-text>Dispositif de commande selon la revendication 1 ou 2, <b>caractérisé en ce que</b> ledit deuxième moyen (200) est adapté pour déterminer si le courant de sortie (Iout) du convertisseur devient supérieur à un courant de référence (Iref) quand la période temporelle (Tc) entre l'instant où la diode de structure dudit au moins un transistor commence à conduire et l'instant où ladite diode arrête de conduite est supérieure à une période temporelle donnée (Tt2).</claim-text></claim>
<claim id="c-fr-01-0011" num="0011">
<claim-text>Dispositif de commande selon la revendication 1 ou 2, <b>caractérisé en ce que</b> ledit deuxième moyen (200) comprend un moyen adapté pour bloquer ledit transistor précédemment débloqué quand le courant de sortie du convertisseur devient inférieur au courant de référence.</claim-text></claim>
<claim id="c-fr-01-0012" num="0012">
<claim-text>Dispositif de commande selon la revendication 1 ou 2, <b>caractérisé en ce que</b> ledit deuxième moyen est adapté pour générer ledit signal de déblocage (EN-SR) quand le courant de sortie (Iout) du convertisseur est maintenu supérieur audit courant de référence (Iref) pendant un nombre donné (n2) de demi-cycles de commutation mesurés du convertisseur.</claim-text></claim>
<claim id="c-fr-01-0013" num="0013">
<claim-text>Convertisseur à découpage résonnant ayant une tension d'entrée et comprenant un transformateur (10) adapté pour fournir le courant de sortie du convertisseur, ledit transformateur (10) comprenant un enroulement primaire et un enroulement secondaire et un réseau résonnant (LLC) couplé à l'enroulement primaire du transformateur et à la tension d'entrée et un redresseur couplé à l'enroulement secondaire et adapté pour redresser ledit courant de sortie du convertisseur, ledit enroulement secondaire étant du type à<!-- EPO <DP n="28"> --> prise centrale et ledit redresseur comprenant au moins une paire de transistors à simple redressement (T1, T2), ledit convertisseur comprenant un dispositif de commande (100, 200, 300) du redresseur selon l'une quelconque des revendications précédentes.</claim-text></claim>
<claim id="c-fr-01-0014" num="0014">
<claim-text>Procédé de commande d'un redresseur d'un convertisseur à découpage, ledit convertisseur recevant une tension d'entrée et étant adapté pour fournir un courant de sortie (Iout), ledit redresseur (T1, T2) étant adapté pour redresser ledit courant de sortie (Iout) du convertisseur et comprenant au moins un transistor (T1), ledit dispositif de commande (100, 200, 300) étant adapté pour piloter ledit au moins un transistor, <b>caractérisé en ce qu'</b>il comprend la détection du début et de la fin de chaque demi-cycle de commutation du convertisseur et la mesure de la durée de celui-ci, la génération d'un signal (EN-SR) pour rendre passant ledit transistor après que se soit écoulé un délai, constitué d'un nombre donné (n) de demi-cycles de commutation mesurés du convertisseur, et quand le courant de sortie (Iout) du convertisseur est supérieur à un courant de référence (Iref).</claim-text></claim>
</claims>
<drawings id="draw" lang="en"><!-- EPO <DP n="29"> -->
<figure id="f0001" num="1,2"><img id="if0001" file="imgf0001.tif" wi="160" he="233" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="30"> -->
<figure id="f0002" num="3,4"><img id="if0002" file="imgf0002.tif" wi="162" he="233" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="31"> -->
<figure id="f0003" num="5,6"><img id="if0003" file="imgf0003.tif" wi="160" he="233" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="32"> -->
<figure id="f0004" num="7,8"><img id="if0004" file="imgf0004.tif" wi="160" he="233" img-content="drawing" img-format="tif"/></figure>
</drawings>
<ep-reference-list id="ref-list">
<heading id="ref-h0001"><b>REFERENCES CITED IN THE DESCRIPTION</b></heading>
<p id="ref-p0001" num=""><i>This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.</i></p>
<heading id="ref-h0002"><b>Patent documents cited in the description</b></heading>
<p id="ref-p0002" num="">
<ul id="ref-ul0001" list-style="bullet">
<li><patcit id="ref-pcit0001" dnum="US6191964B"><document-id><country>US</country><doc-number>6191964</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0001">[0005]</crossref></li>
<li><patcit id="ref-pcit0002" dnum="US7184280B"><document-id><country>US</country><doc-number>7184280</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0002">[0010]</crossref><crossref idref="pcit0004">[0010]</crossref></li>
<li><patcit id="ref-pcit0003" dnum="US7193866B"><document-id><country>US</country><doc-number>7193866</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0003">[0010]</crossref></li>
</ul></p>
</ep-reference-list>
</ep-patent-document>
