(19) |
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(11) |
EP 2 197 253 A8 |
(12) |
CORRECTED EUROPEAN PATENT APPLICATION |
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Note: Bibliography reflects the latest situation |
(15) |
Correction information: |
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Corrected version no 1 (W1 A1) |
(48) |
Corrigendum issued on: |
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03.11.2010 Bulletin 2010/44 |
(43) |
Date of publication: |
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16.06.2010 Bulletin 2010/24 |
(22) |
Date of filing: 12.12.2008 |
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(51) |
International Patent Classification (IPC):
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(84) |
Designated Contracting States: |
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AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL
PT RO SE SI SK TR |
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Designated Extension States: |
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AL BA MK RS |
(71) |
Applicant: Nederlandse Organisatie voor Toegepast
-Natuurwetenschappelijk Onderzoek TNO |
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2628 VK Delft (NL) |
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(72) |
Inventors: |
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- Hovestad, Arjan
5231 PK 's-Hertogenbosch (NL)
- Tacken, Roland Anthony
5663 SH Geldrop (NL)
- Rendering, Hendrik
3437 XH Nieuwegein (NL)
- 't Mannetje, Hero Hendrik
5501 CD Veldhoven (NL)
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(74) |
Representative: Hatzmann, Martin et al |
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Vereenigde
Johan de Wittlaan 7 2517 JR Den Haag 2517 JR Den Haag (NL) |
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(54) |
Method for electric circuit deposition |
(57) The invention is directed to a method for preparing a substrate with an electrically
conductive pattern for an electric circuit, to the substrate with the electrically
conductive pattern, and to a device comprising the substrate with the electrically
conductive pattern.
The method of the invention comprises
(a) providing an electrically insulating or semiconductive substrate, which substrate
comprises a distribution of nanoparticles of a first metal or alloy thereof;
(b)
i) locally applying a layer of an inhibiting material onto said substrate; or
ii)
- applying a layer of an inhibiting material onto said substrate, and
- locally removing or deactivating, light-induced, thermally, chemically and/or electrochemically,
the layer of inhibiting material and thereby exposing at least part of the first metal
or alloy thereof
so as to obtain a pattern for an electric circuit;
(c) depositing by means of an electroless process a layer of a second metal or alloy
thereof on the exposed part of the first metal or alloy thereof present in the substrate
as obtained in step (b), whereby inhibiting material that is still present on the
substrate after step (b) locally inhibits the second metal or alloy thereof to be
deposited on the first metal or alloy thereof, ensuring that the second metal or alloy
thereof will selectively be deposited on the exposed part of the first metal or alloy
thereof as obtained in step (b).