FIELD OF THE INVENTION
[0001] The present invention relates to a nip apparatus and a nip method which press a material
such as a band-shaped film to be treated on a supporting member such as a roll.
TECHNICAL BACKGROUND
[0002] In a nip apparatus which a band-shaped film is conveyed while being supported on
a rotating roll, when the film is provided on the roll, a part of air is enclosed
in a film, the enclosed air forms air bubbles causes a partial elevation of film.
The partial elevation of the film changes a gap between the film surface and a post-processing
device through which the film is subjected to post-processing such as coating or plasma
processing, causing problem of resulting in incapability of uniform post-processing.
[0003] In order to solve such a problem, there is proposed a method in which a film supported
on a roll (referred to as a supporting roll) is pressed against the roll at an appropriate
pressure employing a roll with elasticity (referred to as an elastic roll), thereby
bringing the film into close contact with the supporting roll.
[0004] However, in the technique employing the elastic roll, dirt on the elastic roll surface
is transferred to the film, since the elastic roll is in contact with the film. Further,
the technique employing the elastic roll has problem in that since the elastic roll
rotates while deforming along the outer circumference of the supporting roll, microscopic
slippage takes place at the interface between the film and the elastic roll, producing
scratches due to slippage on the film surface.
[0005] In order to prevent the dirt transfer or scratches due to slippage as described above,
a technique is disclosed in, for example, Patent Document 1, in which compressed air
is jetted onto a band-shaped film supported on a supporting roll, thereby improving
contact between the film and the roll without employing an elastic roll.
[0006] A technique is disclosed in Patent Document 2 in which air present between a film
and a supporting roll having numerous minute holes in the surface is sucked through
the minute holes, thereby improving contact between the film and the roll.
Patent Document 1: Japanese Patent O.P I. Publication No.
59-92856
Patent Document 2: Japanese Patent O.P I. Publication No.
2003-171044
DISCLOSURE OF THE INVENTION
PROBLEMS TO BE SOLVED BY THE INVENTION
[0007] However, in the technique disclosed in Patent Document 1, it is necessary that the
compressed air is continuously jetted on the film surface while maintaining a pressure
higher than outside atmospheric pressure and consumption of the air is too large.
The technique, when expensive gas such as a nitrogen gas needs to be employed as air
to be compressed, increases the gas cost, and therefore, is not considered to be useful.
[0008] The technique disclosed in Patent Document 2 has problem in that scratches due to
edges of the numerous minute holes are produced on the surface on the side facing
the roll of the film.
[0009] An object of the invention is to provide a nip apparatus and a nip method which reduce
consumption of gas used without scratches which are produced when a material to be
treated (such as a band-shaped film and the like) is pressed against a support (such
as a roll and the like).
MEANS FOR SOLVING THE ABOVE PROBLEMS
[0010] The above object of the invention can be attained by any one of the following constitutions.
- 1. A nip apparatus which presses a material to be treated provided on a supporting
member against the supporting member by jetting gas onto the surface of the material,
the nip apparatus comprising:
a gas jetting device with a jetting opening disposed in a position facing the supporting
member, the material being provided between the jetting opening and the supporting
member,
wherein the gas jetting device comprises a gas introduction pipe for introducing gas
to the jetting opening and a gas storage chamber with a jetting opening, connecting
the gas introduction pipe and having a sectional area greater than that of the gas
introduction pipe, the jetting opening being a constituent of the gas storage chamber.
- 2. The nip apparatus of item 1, wherein the gas storage chamber stores gas with a
pressure higher than outside atmospheric pressure.
- 3. The nip apparatus of item 1 or 2, further comprising a gas discharge device which
sucks gas and discharges the sucked gas in the vicinity of a gap between the supporting
member and the jetting opening.
- 4. The nip apparatus of any one of items 1 through 3, wherein the supporting member
is a rotatory roll and the material to be treated is a band-shaped film, the film
being supported on the rotatory roll.
- 5. A nip method which presses a material to be treated provided on a supporting member
against the support member by jetting gas onto the surface of the material, the nip
method comprising the steps of:
introducing gas into a gas introduction pipe with a specific diameter; and
discharging gas from a gas storage chamber with a jetting opening, wherein the gas
storage chamber connects the gas introduction pipe and has a sectional area greater
than that of the gas introduction pipe.
EFFECTS OF THE INVENTION
[0011] In the invention, a gas storage chamber, which stores gas with a pressure higher
than outside atmospheric pressure, is disposed at a position facing a film, and a
band-shaped film can be conveyed while being pressed against a roll with a reduced
consumption of gas.
BRIEF DESCRIPTION OF THE DRAWING
[0012]
Fig. 1 is a schematic drawing showing the structure of the nip apparatus 1 in the
invention.
EXPLANATION OF SYMBOLS
[0013]
- 1. Nip apparatus
- 2. Film
- 3. Roll
- 4. Gas jetting device
- 5. Jetting nozzle
- 6. Surrounding wall
- 7. Gas storage chamber
- 8. Gas discharge device
PREFERRED EMBODIMENT OF THE INVENTION
[0014] The preferred embodiment of the invention will be explained below. The present invention
will be explained employing the embodiment illustrated but the present invention is
not limited thereto. A definite explanation of the preferred embodiment of the invention
made below shows the best mode of the invention but does not limit the terms or technical
scope described.
[0015] Next, the present invention will be explained, referring to the drawing.
[0016] Fig. 1 is a schematic drawing showing the structure of the nip apparatus 1 in the
invention. In the drawing, the dip device 1 comprises a roll 3 and a gas jetting device
4, a band-shaped film 2 being supported on the roll 3 and the gas jetting device jetting
gas onto the band-shaped film 2 supported on the roll 3.
[0017] In the gas jetting device 4, a jetting nozzle 5 as a gas introduction pipe is disposed
at a position facing the film 2. A surrounding wall 6 is disposed at the tip end of
the jetting nozzle 5, the surrounding wall connecting the jetting nozzle 5 and extending
to the vicinity of the surface of the film 2. The surrounding wall 6 has a port diameter
greater than the pipe diameter of the jetting nozzle 5, constituting a gas storage
chamber 7. The gas storage chamber, which has a diameter (or a sectional area) greater
than a pipe diameter (or a sectional area) of the gas introduction pipe, and is not
completely opened, makes it possible to jet a high pressure gas onto an area broader
than an area onto which a nozzle jets the gas, providing an excellent nip effect and
reducing gas consumption amount. Namely, the nip apparatus has a structure that the
stream diameter (or sectional area) of the gas stream increases in the gas storage
chamber but a relatively high pressure of the gas is maintained.
[0018] The gas storage chamber comprises a gas jetting port and jets gas onto the film 2,
whereby the film 2 can be pressed against the roll 3. Herein, the jetting nozzle 5
and the surrounding wall 6 are explained as being different members but they may be
integrated into one body.
[0019] The roll 3 rotates in the direction as shown by an arrow Y, and the band-shaped film
moves in the direction as shown by an arrow X. Gas jetted by the gas jetting device
is temporarily stored in a space formed from the surrounding wall, the end surface
of the jetting nozzle and the surface of the film 2. This space forms a gas storage
chamber 7. Gas G , which is ejected from the gas jetting device 4 and has a pressure
higher than outside atmospheric pressure, is stored in the gas storage chamber 7.
The gas G with higher pressure is discharged from the gas storage chamber 7 through
a gap S between the surrounding wall 6 and the film 2. The gas, G discharged from
the gas storage chamber 7, accumulates in the nip apparatus 1 unless any processing
is carried out, and when the accumulated gas leaks from the device, the leaked gas
has problem in that it may be harmful to human body due to kinds of gas used. Accordingly,
a gas discharge device 8, which sucks the gas G and discharges the gas toward a predetermined
section, is provided in the vicinity of the gap S so as not to allow extra gas to
accumulate in the nip apparatus 1. In this case, it is preferred that the amount of
the sucked gas is larger than the jetting amount of gas jetted by the gas jetting
device.
[0020] In the gas jetting device 4, a filter F for removing impurities in the gas G is provided
in a path through which the gas G passes. In the embodiment of the invention, the
filter is provided between the gas jetting device 4 and a compressor 9 which compresses
the gas G In this drawing, the gas jetting device 4 is explained as pressing gas against
one portion of the band-shaped film surface. Plural gas jetting device may be provided
in the width direction (from the front of the page to the back of the page) of the
band-shaped film 4, thereby linearly applying uniform pressure to the surface in the
width direction af the film.
[0021] The gas jetting device can be a gas jetting device in the form of a slit capable
of linearly jetting gas onto the entire surface in the width direction of the film.
In this case, it is necessary that the jetting port of the gas storage chamber (the
sectional area of the gas storage chamber is larger than the tip port of the slit
(the sectional area of the gas introduction pipe).
[0022] After the film is pressed against the roll, a step may be carried out in which the
pressed film is subjected to post-treatment such as coating, UV irradiation or plasma
on that roll.
[0023] The difference in gas pressure GF (hPa) of the gas jetted by the gas jetting device
4 between the device of the invention with the gas storage chamber 7 and a conventional
device without the gas storage chamber 7 was determined in the experiment. The results
are shown below.
[0024] The experiment was carried out under the following conditions.
S = 1 mm
W =1000 mm
V = 500 mm/sec.
wherein S (mm) represents a gap between the surrounding wall 6 and the upper surface
of the film 2, W (mm) represents the width of the fihn 2, and v (mm/sec.) represents
a talce-up speed at which the film 2 is taken-up.
[0025] The gas pressure GF was 1200 hPa in the device of the invention with the gas storage
chamber 7, while the gas pressure GF was 2000 hPa in the conventional device without
the gas storage chamber 7.
[0026] In summary, the nip apparatus of the invention with the gas storage chamber 7 enabled
to convey the film 2 while pressing the film against the roll 3 without causing scratches
due to film slippage at a gas pressure GF of about 1.1 times the atmospheric pressure
1013 (hPa). This shows that the gas in the gas storage chamber 7 uniformly presses
the film surface.
[0027] In contrast, the conventional nip apparatus required a gas pressure GF of about 2
times the atmospheric pressure, in order to obtain the same performance as described
above.
[0028] Thus, the nip apparatus of the invention comprising a gas storage chamber 7, which
stores gas with a pressure higher than outside atmospheric pressure, enables to convey
while pressing a band-shaped film against a roll in a reduced amount of gas.
1. A nip apparatus which presses a material to be treated provided on a supporting member
against the supporting member by jetting gas onto the surface of the material, the
nip apparatus comprising:
a gas jetting device with a jetting opening disposed in a position facing the supporting
member, the material being provided between the jetting opening and the supporting
member,
wherein the gas jetting device comprises a gas introduction pipe for introducing gas
to the jetting opening and a gas storage chamber with a jetting opening, connecting
the gas introduction pipe and having a sectional area greater than that of the gas
introduction pipe.
2. The nip apparatus of claim 1, wherein the gas storage chamber stores gas with a pressure
higher than outside atmospheric pressure.
3. The nip apparatus of claim 1 or 2, further comprising a gas discharge device which
sucks gas and discharges the sucked gas in the vicinity of a gap between the supporting
member and the jetting opening.
4. The nip apparatus of any one of claims 1 through 3, wherein the supporting member
is a rotatory roll and the material to be treated is a band-shaped film, the film
being supported on the rotatory roll.
5. A nip method which presses a material to be treated provided on a supporting member
against the support member by jetting gas onto the surface of the material, the nip
method comprising the steps of:
introducing gas into a gas introduction pipe with a specific diameter; and
discharging gas from a gas storage chamber with a jetting opening, wherein the gas
storage chamber connects the gas introduction pipe and has a sectional area greater
than that of the gas introduction pipe.