(19)
(11) EP 2 207 198 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
29.06.2011 Bulletin 2011/26

(43) Date of publication A2:
14.07.2010 Bulletin 2010/28

(21) Application number: 10003219.2

(22) Date of filing: 18.06.2003
(51) International Patent Classification (IPC): 
H01L 21/683(2006.01)
H01L 21/98(2006.01)
H01L 23/31(2006.01)
H01L 25/065(2006.01)
 H01L 21/768(2006.01)
H01L 23/00(2006.01)
H01L 23/48(2006.01)
(84) Designated Contracting States:
DE FI FR GB

(30) Priority: 18.06.2002 JP 2002176775

(62) Application number of the earlier application in accordance with Art. 76 EPC:
03013839.0 / 1376678

(71) Applicant: Sanyo Electric Co., Ltd.
Moriguchi City, Osaka 570-8677 (JP)

(72) Inventors:
  • Noma Takashi
    Osaka (JP)
  • Shinogi Hiroyuki
    Ora-gun, Gunma-ken (JP)
  • Takao Yukihiro
    Nitta-gun, Gunma-ken (JP)

(74) Representative: Glawe, Delfs, Moll 
Patent- und Rechtsanwälte Rothenbaumchaussee 58
20148 Hamburg
20148 Hamburg (DE)

   


(54) Manufacturing method of a semiconductor device


(57) A manufacturing method of a semiconductor device of this invention includes providing a semiconductor wafer (101) having a metal pad (102) on a front surface thereof, bonding the wafer (101) and a holding substrate (111) which bolsters the wafer (101) through a film (110), forming an opening (114) by etching the wafer (101) followed by forming an insulating film (115) on a side wall of the opening (114), forming a metal (117) in the opening (114) and separating the wafer (101) and the holding substrate (111).







Search report