ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIRO..CY..TRBGCZEEHUPLSK..HRIS..MTNO........................JBDM Ver 0.1.63 (23 May 2017) - 2999001/02216428CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120170816W173deBibliographieenBibliographyfrBibliographieEP08852872.4200810292010051820140827jaenen200729875220071119JP2017081620173320100811201032201706072017232017010920170816201733C30B 29/36 20060101AFI20120712BHEP C23C 14/48 20060101ALI20120712BHEP C30B 1/10 20060101ALI20120712BHEP H01L 21/02 20060101ALI20120712BHEP H01L 21/20 20060101ALI20120712BHEP H01L 21/205 20060101ALI20120712BHEP H01L 21/265 20060101ALI20120712BHEP H01L 21/316 20060101ALI20120712BHEP H01L 27/12 20060101ALI20120712BHEP H01L 21/762 20060101ALI20120712BHEP deVERFAHREN ZUR HERSTELLUNG EINES SiC-MONOKRISTALLSUBSTRATSenPROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATEfrPROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE SiC MONOCRISTALLINJP-A- 4 075 379JP-A- 2001 094 082JP-A- 2003 224 248JP-A- 2004 296 558JP-A- 2005 268 460JP-A- 2007 324 573US-A- 5 759 908US-A1- 2002 089 032STECKL A J ET AL: "SIC SILICON-ON-INSULATOR STRUCTURES BY DIRECT CARBONIZATION CONVERSION AND POSTGROWTH FROM SILACYCLOBUTANE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 141, no. 6, 1 June 1994 (1994-06-01), pages L66-L68, XP000469381, ISSN: 0013-465120120717IZUMI, Katsutoshi1-2 Fudai Takusha 23 Onoshiba-cho Naka-kuSakai-shi Osaka 599-8233JPYOKOYAMA, Takashic/o AIR WATER INC. Research & Development 4007-3 Yamato AzusagawaMatsumoto-shi Nagano 390-1701JPAir Water Inc.101033040MOR-02-EP2, Kita 3-jo Nishi 1-chome Chuo-kuSapporo-shi Hokkaido 060-0003JPHering, Hartmut100002584Patentanwälte Berendt, Leyh & Hering Innere Wiener Strasse 2081667 MünchenDEATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMTNLNOPLPTROSESISKTRJP200807016020081029jaWO20090665662009052820092220100811201032