COMPOSITION FOR FORMATION OF ANTI-REFLECTIVE FILM, AND PATTERN FORMATION METHOD USING THE COMPOSITION

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(11)

EP 2 233 978 A8

(12)	CORRECTED EUROPEAN PATENT APPLICATION
	published in accordance with Art. 153(4) EPC

(15)	Correction information:
	Corrected version no 1 (W1 A1)

(48)	Corrigendum issued on:
	03.11.2010 Bulletin 2010/44

(43)	Date of publication:
	29.09.2010 Bulletin 2010/39

(21)	Application number: 08863406.8

(22)	Date of filing: 12.12.2008

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International Patent Classification (IPC):

G03F 7/11^(2006.01)
C08F 220/10^(2006.01)
H01L 21/027^(2006.01)

C08F 216/06^(2006.01)
C08F 226/10^(2006.01)

(86)	International application number:
	PCT/JP2008/072681

(87)	International publication number:
	WO 2009/081773 (02.07.2009 Gazette 2009/27)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

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Priority:

26.12.2007 JP 2007334891

(71)	Applicant: AZ Electronic Materials USA Corp.
	Somerville, NJ 08876 (US)

(72)	Inventors:
	NOYA, Go Kakegawa-shi Shizuoka 437-1412 (JP) AKIYAMA, Yasushi Kakegawa-shi Shizuoka 437-1412 (JP) TAKANO, Yusuke Kakegawa-shi Shizuoka 437-1412 (JP)

(74)	Representative: Féaux de Lacroix, Stefan
	Isenbruck Bösl Hörschler LLP Eastsite One Seckenheimer Landstrasse 4 68163 Mannheim 68163 Mannheim (DE)

(54)	COMPOSITION FOR FORMATION OF ANTI-REFLECTIVE FILM, AND PATTERN FORMATION METHOD USING THE COMPOSITION

(57) The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm.