(19)
(11) EP 2 237 281 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
23.10.2013 Bulletin 2013/43

(45) Mention of the grant of the patent:
17.07.2013 Bulletin 2013/29

(21) Application number: 10165898.7

(22) Date of filing: 27.09.2000
(51) International Patent Classification (IPC): 
G11C 11/406(2006.01)
G11C 14/00(2006.01)
 G11C 5/14(2006.01)

(54)

Semiconductor memory device, and method of controlling the same

Halbleiterspeichervorrichtung und Steuerverfahren dafür

Dispositif mémoire à semi-conducteur et son procédé de commande

(84) Designated Contracting States:
DE FR GB

(30) Priority: 09.11.1999 JP 31845899
09.08.2000 JP 2000241019

(43) Date of publication of application:
06.10.2010 Bulletin 2010/40

(62) Application number of the earlier application in accordance with Art. 76 EPC:
09156495.5 / 2083424
00308482.9 / 1100089

(73) Proprietor: Fujitsu Semiconductor Limited
Kohoku-ku, Yokohama-shi Kanagawa 222-0033 (JP)

(72) Inventors:
  • Fujioka, Shinya
    Kawasaki-shi Kanagawa 211-8588 (JP)
  • Kawakubo, Tomohiro
    Kawasaki-shi Kanagawa 211-8588 (JP)
  • Nishimura, Koichi
    Kawasaki-shi Kanagawa 211-8588 (JP)
  • Sato, Kotoku
    Kawasaki-shi Kanagawa 211-8588 (JP)

(74) Representative: Fenlon, Christine Lesley 
Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn
London WC1V 7JH
London WC1V 7JH (GB)


(56) References cited: : 
EP-A2- 0 566 306
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).