MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER - Patent 2274770

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EP 2 274 770 A1

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(43)	Date of publication:
	19.01.2011 Bulletin 2011/03

(21)	Application number: 09739614.7

(22)	Date of filing: 28.04.2009

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International Patent Classification (IPC):

H01L 21/335^(2006.01)

(86)	International application number:
	PCT/US2009/041996

(87)	International publication number:
	WO 2009/134812 (05.11.2009 Gazette 2009/45)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
	Designated Extension States:
	AL BA RS

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Priority:

28.04.2008 US 48336 P

(71)	Applicant: STMicroelectronics N.V.
	1228 Plan-les-Quates, Geneva (CH)

(72)	Inventors:
	ANKOUDINOV, Alexei Redmond WA 98052 (US) RODOV, Vladimir Seattle WA 98146 (US) CORDELL, Richard Boulder Creek CA 95006 (US)

(74)	Representative: Style, Kelda Camilla Karen
	Page White & Farrer Bedford House John Street London, WC1N 2BF London, WC1N 2BF (GB)

(54)	MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER