ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSKBAHRIS..MTNORSMESM..................JBDM Ver 0.1.63 (23 May 2017) - 1620000/02306523EUROPEAN PATENT APPLICATIONA320180124EP10161586.22010043020100430enenen200923017320091002JP2018012420180420110406201114H01L 31/153 20060101AFI20171215BHEP H01L 31/0352 20060101ALI20171215BHEP H01L 31/101 20060101ALI20171215BHEP H01L 31/107 20060101ALI20171215BHEP deInfrarotdetektor, Infrarotdetektionsvorrichtung und Verfahren zur Herstellung eines InfrarotdetektorsenInfrared detector, infrared detecting apparatus and method of manufacturing infrared detectorfrDétecteur d'infrarouge, appareil de détection d'infrarouge et procédé de fabrication d'un détecteur d'infrarouge1aMitsubishi Heavy Industries10017970518453/EL/ra16-5, Konan 2-chome, Minato-kuTokyo 108-8215JPNational University Corporation Nagoya University10018468218453/EL/ra1, Furo-cho, Chikusa-kuNagoya-shi, AichiJPSoma, FumihitoMitsubishi Heavy Industries, Ltd. 16-5, Konan 2-chome Minato-kuTokyo 108-8215JPKuroda, YoshikatsuMitsubishi Heavy Industries, Ltd. 16-5, Konan 2-chome Minato-kuTokyo 108-8215JPMasukawa, KazunoriMitsubishi Heavy Industries, Ltd. 16-5, Konan 2-chome Minato-kuTokyo 108-8215JPKato, MasahiroMitsubishi Heavy Industries, Ltd. 16-5, Konan 2-chome Minato-kuTokyo 108-8215JPYamaguchi, MasahitoNational University Corporation Nagoya University 1, Furo-cho, Chikusa-ku Nagoya-shiAichiJPHenkel, Breuer & Partner100060244Patentanwälte Maximiliansplatz 2180333 MünchenDEATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMKMTNLNOPLPTROSESISKSMTRALBAMERS20180124201804

Provided is an infrared detector comprising: a reflection portion (1) which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion (2) having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion (1) so as to generate photo-current; a light emitting portion (3) having a plurality of layered quantum well structures into each of which electrons of the photo-current generated by the photo-current generating portion (2) are injected and in each of which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion (4) which detects the near-infrared and visible rays emitted from the light emitting portion (3) and which detects the near-infrared and visible rays emitted from the light emitting portion (3) and then reflected by the reflection portion (1). The reflection portion (1), the photo-current generating portion (2), and the light emitting portion (3) are made of group III-V compound semiconductors that are layered on top of a semiconductor substrate.

18453/EL/raEP10161586.2Mitsubishi Heavy Industries1ABE20171221H01L
CHIU SHEN ET ALMulti-spectral QWIP-LED devices : a feasibility studyDEFENCE RESEARCH ESTABLISHMENT OTTAWA: TECHNICAL MEMORANDUM 1999-090, DEFENSE NATIONAL, CA19991001125XP002590486
X1-4,7,9-12,15* abstract; figure 3(1) ** Section 2.1.3 *GB2300486ACA NAT RESEARCH COUNCIL [CA]19961106X1,5,6,8,10,11,13,14,16* abstract; figures 1,2,4 ** page 1, line 26 - line 35 ** page 3, line 7 - line 29 ** page 4, line 2 - line 29 ** page 5, line 3 - line 26 *US2003092212A1BUCHANAN MARGARET [CA] ET AL20030515X1,10,11* abstract; figures 1,8,10a,10b *
VICTOR RYZHII ET ALElectron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodesPROCEEDINGS OPTICAL DIAGNOSTICS OF LIVING CELLS IIUS20000413394810.1117/12.3821210277-786X978-1-5106-1324-9page 206XP055434489
A1,10,11* the whole document *US2003047752A1CAMPBELL JOE C [US] ET AL20030313A1,10,11* abstract ** paragraphs [0116], [0154], [0171], [0235], [0360], [0362], [0377], [0384], [0389], [0402], [0409] *US2005077539A1LIPSON JAN [US]20050414A1,10,11* abstract; figures 2,5,7 *JP2003218366AJAPAN SCIENCE & TECH CORP20030731A1,10,11* abstract; figures 1,3,6,7 *JP2009065143ATECH RES DEV INST MINI DEFENCE; FUJITSU LTD20090326A1,10,11* abstract; figures 4,7,8 *Favre, PierreBerlin20171214GB2300486A19961106FR2733858A119961108GB2300486A19961106US5567955A19961022US2003092212A120030515CA2365209A120021109US2003092212A120030515US2003211648A120031113US2003047752A120030313AU1661102A20020408US2003047752A120030313WO0227805A220020404US2005077539A120050414US2005077539A120050414WO2005017973A220050224JP2003218366A20030731NONEJP2009065143A20090326JP4538516B220100908JP2009065143A20090326US2010032552A120100211