TECHNICAL FIELD OF THE INVENTION
[0001] The present invention relates to an optical storage medium comprising a substrate
layer, a data layer and a nonlinear layer with a super-resolution structure arranged
above the data layer. The data layer comprises in particular pits and lands having
a size above an optical resolution limit and pits and lands having a size below the
optical resolution limit of a pickup for reading of the data arranged on the data
layer.
BACKGROUND OF THE INVENTION
[0002] Optical storage media are media in which data are stored in an optically readable
manner, for example by means of a laser and an optical detector, for example a photo
detector, being integrated within a pickup. The detector is used for detecting reflected
light of the laser beam when reading data on the storage medium. In the meanwhile
a large variety of optical storage media are known, which are operated with different
laser wavelength, and which have different sizes for providing storage capacities
from below one Gigabyte up to 50 Gigabyte (GB). The formats include read-only formats
such as Audio CD and Video DVD, write-once optical media such as CD-R and DVD-R, DVD+R,
as well as rewritable formats like CD-RW, DVD-RW and DVD+RW. Digital data are stored
on these media along tracks in one or more layers of the media.
[0003] The storage medium with the highest data capacity is at present the Blu-Ray disc
(BD), which allows to store up to about 50 GB on a dual layer disc. For reading and
writing of a Blu-Ray disc an optical pickup with a laser wavelength of 405 nm and
a numerical aperture of 0,85 is used. On the Blu-Ray disc a track pitch of 320 nm
and a mark length from 2T to 8T or 9T is used, where T is the channel bit length and
wherein 2T corresponds with a minimum mark length of 138, 149 or 160 nm.
[0004] The diffraction limit of optical instruments as described by the Abbe theory is about
lambda/2NA, which is 238nm for a Blu-Ray type pickup having a laser wavelength lambda=405nm
and a numerical aperture NA=0,85. For the optical resolution limit of a pickup for
the read out of the high frequency (HF) data signal of a Blu-Ray disc, a higher resolution
can be obtained when the laser beam moves over the pits and lands of a track on the
Blu-Ray disc. Very small amplitude changes can be detected by using a sensitive signal
detection, which allows to detect pits with a Blu-Ray type pickup having a size of
about 120nm corresponding with lambda/4NA.
[0005] New optical storage media with a super-resolution structure offer the possibility
to increase the data density of the optical storage medium by a factor of two to four
in one dimension as compared with the Blu-Ray disc. This is possible by including
a nonlinear layer, which is placed above a data layer of the optical storage medium,
and which significantly reduces the effective size of a light spot used for reading
from or writing to the optical storage medium. The nonlinear layer can be understood
as a mask layer because it is arranged above the data layer and for some specific
materials only the high intensity center part of a laser beam can penetrate the mask
layer. Further, semiconductor materials can be used as a nonlinear layer, e.g. InSb,
which show a higher reflectivity in the center part of the focused laser beam, and
which center reflectivity is dependent on the pit structure of the corresponding data
layer. Therefore, the super-resolution effect allows to record and read data stored
in marks of an optical disc, which have a size below the optical resolution limit
of lambda/4NA of a corresponding optical pickup.
[0006] The nonlinear layer is often called a super-resolution near-field structure (Super-RENS)
layer because it is assumed that for specific materials, the optical effect of reducing
the effective spot size of the laser beam is based on a near-field interaction between
the marks and spaces of the data layer and the nonlinear layer. Super-RENS optical
discs comprising a super resolution near-field structure are known which use a metal
oxide, a polymer compound or a phase-change layer comprising a GeSbTe or a AgInSbTe
as a non-linear layer.
BRIEF SUMMARY OF THE INVENTION
[0007] The optical storage medium comprises a substrate layer, a data layer with data arranged
in tracks on the substrate layer, a thermal layer and a nonlinear layer disposed on
the data layer, wherein the thermal layer and the nonlinear layer constitute an active
layer representing an anti-reflective layer. The nonlinear layer comprises a super-resolution
material having an increased reflectivity when irradiated with a laser beam. The optical
storage medium is in particular essentially transparent for light intensities being
below a super-resolution threshold of the super-resolution material.
[0008] The optical storage medium particularly does not comprise a reflective layer and
has a low reflectivity factor therefore for light intensities being below the super
resolution threshold of the super resolution material. The super resolution material
comprises for example a semiconductor material, including for example InSb, which
shows an increased reflectivity when irradiated with a laser beam.
[0009] For reading of the data of the optical storage medium, a pickup is used which includes
a laser providing a laser beam being focused by an objective lens onto a focus spot
on the data layer. The laser beam has a light intensity, which is adjusted such that
only in a small center area of the focus spot, the threshold of the nonlinear layer
for providing the super-resolution effect is exceeded, but not for the outside area
of the focus spot. The pits and lands having a size below the optical resolution limit
of lambda/4NA of the pickup are for example 2T and 3T pits and lands. These pits and
lands, here called super-resolution pits and lands, provide only very small data signals
with regard to the data signals of the larger pits and lands. The amplitude of the
data signal of the super-resolution pits and lands depends in particular on the size
of the center area of the focus spot.
[0010] Reflected light from the outside area of the focus spot does not contribute to the
data signal of the super-resolution pits. If the center area is much smaller than
the outside area, the reflected light intensity from the outside area will be much
stronger than the reflected light of the center area and because reflected light from
the outside area is also sensitive to adjacent tracks, a significant amount of crosstalk
from adjacent tracks is provided by the outside beam, in particular if a very small
track pitch is used.
[0011] By using an optical storage medium, which is essentially transparent for the laser
light impinging on the outside area of the focus spot, crosstalk from the adjacent
tracks and noise from the land areas between the tracks can be essentially avoided,
or at least significantly reduced. A reduced track pitch can be used for the optical
storage medium therefore being even below the diffraction limit of lambda/2NA of a
pickup for reading of the data, which allows a push-pull tracking without any modification
of the pickup.
SHORT DESCRIPTION OF THE DRAWINGS
[0012] Preferred embodiments of the invention are explained in more detail below by way
of example with reference to schematic drawings, which show:
- Fig. 1
- an optical storage medium with a layer stack in a sectional view comprising a substrate,
a data layer and an active layer,
- Fig. 2
- the function of the active layer of the optical storage medium of figure 1 when irradiated
with a laser beam,
- Fig. 3
- the optical storage medium of figure 1, comprising an active layer with two thermal
layers and a nonlinear layer,
- Fig. 4
- measured reflectivity values in dependency of the incident laser power of an optical
disc comprising an InSb layer as the nonlinear layer,
- Fig. 5
- simulation results for an optical storage medium comprising an active layer with an
InSb nonlinear layer, and
- Fig. 6
- simulation results for an optical storage medium comprising an active layer with a
phase change nonlinear layer.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0013] In Fig. 1 an optical storage medium 1 is shown in a cross section in a simplified
manner. The optical storage medium 1 is for example a read-only (ROM) optical storage
disc and comprises a substrate layer 2 on which an data layer 3 is arranged. The data
layer 3 has a data structure consisting of marks and spaces arranged in essentially
parallel tracks. For a ROM disc, the marks and spaces consist of pits and lands, the
pits being molded or embossed on the surface of the substrate layer 2 for representing
the data layer 3.
[0014] Above the data layer 3 an active layer 4 is arranged for providing a super-resolution
effect. The active layer 4 comprises in particular at least a first thermal layer
4a and a nonlinear layer 4b, the nonlinear layer 4b including a material provided
as a super-resolution structure having an increased reflectivity when irradiated with
a laser beam. The nonlinear layer 4b provides an increased resolution for a pickup
for reading the data of the optical storage medium 1 and the material included is
for example a super-resolution near-field structure (Super-RENS) for providing the
super-resolution effect. The thermal layer 4a is comprises advantageously a dielectric
layer, but can be also a thin metallic layer with a low absorption coefficient.
[0015] As a further layer, a cover layer 7 is disposed as a protective layer above the active
layer 4. The optical storage medium 1 may comprise in addition further layers, for
example a dielectric layer 5 arranged between the active layer 4 and the data layer
3 and/or a dielectric layer 6 arranged between the active layer 4 and the cover layer
7. The dielectric layers 5, 6 have a refractive index being essentially below the
refractive index of the thermal layer 4a and may be similar to the refractive indexes
of the substrate layer 3 and/or the cover layer 7. For reading the data of the data
layer 3, a laser beam L generated by a corresponding pickup is applied in this embodiment
from the top of the storage medium 1, penetrating first the cover layer 7.
[0016] The active layer 4 is designed as an antireflective layer, for which the reflectivity
factor is minimized with regard to the wavelength of the laser beam L. It is known
that for transparent layers having an effective optical thickness of lambda/4n, n
being the refractive index of the layer and lambda a wavelength of the laser beam
L, the reflections of the upper surface and of the lower surface of the layer cancel
for that wavelength. This is due to a phase shift of lambda/2 between the reflected
light of the upper and the lower surface, which leads to a destructive interference.
To constitute an antireflective layer having a low reflectivity factor and a high
transmission, the thermal layer 4a and the nonlinear layer 4b should have the same
or essentially the same refractive index. The difference between both refractive indexes
should be smaller than 10% for example, or at least smaller than 25%. In a preferred
embodiment, the reflectivity factor of the optical storage medium is below 10% for
light intensities being below the super-resolution threshold of the super-resolution
material.
[0017] In a further aspect of the invention, the optical storage medium 1 is designed as
an essentially transparent optical disc for light intensities being below the threshold
for the super-resolution effect of the material used for the nonlinear layer, and
has for example a transparency of at least 50%. The material of the nonlinear layer
4b in particular has an increased reflectivity when irradiated with a light intensity,
which is above the threshold for providing the super-resolution effect. The optical
storage medium 1 has advantageously no reflective layer, as used in essentially all
commercially available read-only or recordable optical discs. A reflective layer inhibits
essentially any light transmission and is included usually to increase the reflected
light intensity for providing a higher amplitude of the data signal.
[0018] In particular the real part of the refractive index of the thermal layer 4a and of
the nonlinear layer 4b should be nearly equal, so that both layers appear as a single
layer 4 for the laser wavelength. The imaginary part of the refractive index of both
layers should be as small as possible, to improve the functionality of the active
layer 4.
[0019] The operation of the optical storage medium 1 is now explained with regard to figure
2, which shows a read-only optical storage medium 1 having a substrate 2, on which
a data layer 3 is provided having pits 11 and lands 12 being arranged as tracks on
the data layer 3. The data layer 3 is covered with an active layer 4 in accordance
with the optical storage medium 1 of Fig. 1, comprising in this embodiment a thermal
layer 4a deposited on the data layer 3 and a nonlinear layer 4b deposited on the thermal
layer 4a.
[0020] For reading of the data of the optical storage medium 1, a pickup comprising an objective
lens 10 moves along the tracks of the optical storage medium 1. The pickup includes
a laser, which provides a laser beam L being focused to a spot 14 on the data layer
3 by the objective lens 5. The laser beam L has a light intensity, which is adjusted
such that only in a small center area 13 of the focussed spot 14, the threshold of
the nonlinear layer 4b for providing the super-resolution effect is exceeded, but
not for an outside area 15 of the spot 14. The center area 13 of the nonlinear layer
4b has an increased reflectivity therefore, and light 16 is reflected under a wide
angle due to the diffraction effect and is at least partly collected by the objective
lens 5.
[0021] When optical storage medium 1 is rotating, the focussed spot 14 with the center area
13 moves along a track of the storage medium 1 and the reflected light intensity as
received by the pickup is modulated by the pits and lands of the track, because the
nonlinear layer 4b is sensitive to the pits being arranged as holes below the nonlinear
layer 4b on the substrate layer 2 and therefore, the reflected light as received by
the pickup is modulated by the pit and land data structure of the optical storage
medium 1. The optical storage medium 1 is in particular designed for providing a high
storage capacity by including pits having a size being below the optical resolution
limit of lambda/4NA of the pickup, e.g. using a pit/land data structure having 2T
and/or 3T pits and lands with a size below the optical resolution limit.
[0022] For an increased data capacity, the optical storage medium 1 uses a very small track
pitch between adjacent tracks on the optical storage medium 1, which is in particular
below the diffraction limit of lambda/2NA of a corresponding pickup for reading of
the data. Because of the high transparency of the optical storage medium 1, crosstalk
from neighbouring tracks and noise from reflected light not contributing to the data
signal is considerably reduced. The incident light of the laser beam L not hitting
the center area 13 is transmitted through the optical storage medium. In particular
also the incident light of the outside area 15 of the spot 14 not contributing to
the data signal is transmitted through the optical storage medium 1 because of the
comparatively low reflectivity of the nonlinear layer 4a for light intensities being
below the super-resolution threshold of the super-resolution material. The transmission
factor for the transmitted light 17 is therefore high because of the low reflectivity
and low absorption of the optical storage medium.
[0023] The optical storage medium 1 has advantageously a transmission factor of at least
50%. By using in addition an anti-reflective coating, a transmission of close to 100%
could be reached for the laser beam L impinging on the optical storage medium 1, and
if the refractive indexes of both layers of the active layer 4 are perfectly matched.
But defocused light reflected from the cover layer 7 is less relevant because only
little impinges on the detector. Also manufacturing tolerances may reduce the transmission
factor. The optical storage medium 1 may be designed even to provide a defined amount
of reflected light for the pickup, e.g. to allow an improved generation of a focus
error signal for focus regulation of the pickup.
[0024] In a further embodiment of the invention, the two layers 4a, 4b of the optical storage
medium of figure 2 are exchanged in that first the nonlinear layer 4b is disposed
on the data layer 3 of the substrate layer 2 and then the thermal layer 4a on the
nonlinear layer 4b.
[0025] In a further embodiment, the optical storage medium 1 comprises an active layer 4
having a thermal layer 4a disposed on a data layer 3, as arranged on a substrate layer
2, a nonlinear layer 4b disposed on the thermal layer 4a and a second thermal layer
4c being disposed on the nonlinear layer 4b, as shown in figure 3. The thermal layers
4a, 4c are for example dielectric layers or metallic layers. Further, the optical
storage medium 1 of figure 3 may comprise additional layers in correspondence with
the optical storage medium 1 of figure 1.
[0026] The optical storage medium 1 is in particular an optical disc having outside dimensions
similar to DVDs and CDs. The substrate 2 and the cover layer 7 may consist of a plastic
material, as known from DVDs and CDs, having a refractive index of about 1,5. The
layers of the storage medium 1 are arranged as a layer stack, as indicated in figure
1. The dielectric layers 5, 6 comprise for example the material ZnS-SiO
2.
[0027] A preferred material for the super-resolution structure of the nonlinear layer 4b
is for example an InSb alloy. An optical storage medium comprising InSb as a super-resolution
layer shows an increase in reflectivity, when an irradiating laser power is increased
to values being above 1,6 mW, as shown for example in Fig. 4. This can be explained
by transitions of electrons from the valence band to the conduction band of InSb.
A semiconductor with a high electron density in the conduction band has a high reflectivity
for light, comparable to a metal. The electron density in the conduction band can
be further increased by using an n-doping material, for example selenium or tellurium,
for doping of the semiconductor material, which allows to increase the reflectivity
factor to an appropriate value for use with the optical storage medium 1.
[0028] In a preferred embodiment, an InSb layer with a thickness of 20nm and a refractive
index of n=3,3-i*2.7 at 400nm is used as the nonlinear layer, to which a dielectric
layer having a thickness of 22nm and a refractive index of 3,3 is added for providing
the active layer 4 as an antireflective layer with a thickness of lambda/4. For a
calculation of the reflectivity, a simulation with the software tool Mathematica has
been performed. The reflectivity of a 20nm InSb layer as such is 33% at low power,
when no other layers are present. When using this 20nm InSb layer within a perfectly
matched antireflective layer, the calculated reflectivity is below 0.01% for the active
layer 4.
[0029] For the calculation of the optical disc, realistic values are taken into account
in that the reflectivity increases from 33% to 80% for a single InSb layer and increases
from 0% to 55% when the InSb layer is included as a nonlinear layer within an antireflective
layer 4. For the tracks of the data layer, a random distribution of all sizes of pits
and lands is taken into account.
[0030] The resulting modulation transfer functions MTF as a function of the frequency f
in MHz are shown in figure 5. The solid line 51 is the result for the InSb layer being
included within an antireflective layer. The dashed line 52 relates to the single
InSb layer. As can be seen, in particular the high frequency range between 20 and
30 MHz is improved for the disc with the antireflective layer, graph 51, with regard
to the single InSb layer, which frequency range relates to the smallest pits and lands
of the assumed data layer. The cut-off frequency for the single InSb layer, graph
52, is already at 20 MHz.
[0031] When using a phase-change material as the nonlinear layer 4b, the modulation transfer
function MTF is even improved, as shown in figure 6. The dashed line 62 shows the
MTF of a single nonlinear layer, for which a destructive interference occurs between
pits and lands having a size being below the optical resolution limit and pits and
lands having a size above the optical resolution limit, as described in
G. Pilard, C. Féry, L. Pacearescu, H. Hoelzmann, S. Knappmann: Study of Super-Resolution
ROM Disc with a Semiconducting or a Chalcogenide Masking Layer, Jpn.J.Appl.Phys.,
40, (2009), 03A064. When a phase-change layer is included in an active layer being designed as an antireflective
layer, the resulting MTF, solid line 61, does not show any destructive interference.
In particular the dip at 17 MHz can be avoided by using an antireflective layer in
accordance with the invention.
[0032] For the calculation of the modulation transfer functions of figures 5 and 6, different
numerical apertures NA have been taken into account, because the reflected light 16
coming from the small center area 13 of the focus spot 14 includes higher scattering
angles with regard to the reflected light of the larger outside area 15, as shown
in figure 2, due to diffraction effects.
[0033] Because the center area 13 of the focused laser spot is sensitive to radial shifts
relative to the pits of a corresponding track, a push-pull tracking signal can be
provided by the pickup even when a reduced track pitch is used being below the diffraction
limit of lambda/2NA = 238 nm of the pickup for reading of the data. This is only possible,
if the reflected light intensity from the outside area is smaller than the reflected
light intensity of the center area. Otherwise, the reflected light intensity of the
outside area would completely cover the weak push-pull signal as obtained from the
reflected light of the center beam. The focus of a blue laser diode is limitited by
the diffraction limit to a focus spot of 238 nm. In accordance with the invention,
a reduced effective focus spot is provided corresponding with the center area 13 of
focus spot 14.
[0034] The foregoing embodiments and accompanying drawings are merely illustrative, but
not limitative, and also other embodiments of the invention are within the scope of
a person skilled in the art without departing from the spirit and scope of the present
invention. The invention recites therefore in the claims herein after appended.
1. Optical storage medium comprising
a substrate layer (2),
a data layer (3) with data arranged in tracks on the substrate layer (2), and
a thermal layer (4a) and a nonlinear layer (4b) disposed on the data layer (3), wherein
the nonlinear layer (4b) comprises a super-resolution material having an increased
reflectivity when irradiated with a laser beam, characterized in that
the thermal layer (4a) and the nonlinear layer (4b) constitute an active layer (4)
being arranged as an anti-reflective layer.
2. The optical storage medium of claim 1, wherein the optical storage medium is essentially
transparent for light intensities being below the super-resolution threshold of the
super-resolution material.
3. The optical storage medium of claim 2, wherein the optical storage medium has a transmission
factor of at least 50%.
4. The optical storage medium of claim 1, 2 or 3, wherein the active layer (4) has an
optical thickness of lambda/4 +/- 20%, lambda being a laser wavelength of a pickup
for reading data on the optical storage medium.
5. The optical storage medium of one of the preceding claims, wherein the thermal layer
(4a) is arranged between the nonlinear layer (4b) and the data layer (3), or wherein
the nonlinear layer (4b) is arranged between the thermal layer (4a) and the data layer
(3).
6. The optical storage medium of one of the preceding claims, wherein the thermal layer
is a dielectric layer (4a) or a metallic layer.
7. The optical storage medium of claim 5 or 6, wherein the active layer (4) comprises
a second thermal layer being a dielectric or a metallic layer (4c) and wherein the
nonlinear layer (4b) is sandwiched between the first and second thermal layers (4a,
4c).
8. The optical storage medium of one of the preceding claims, wherein the layers (4a,
4b, 4c) of the active layer (4) have the same refractive index within a range of +/-
10%, or within a range of +/- 25%.
9. The optical storage medium of one of the preceding claims, wherein the super-resolution
material comprises a semiconductor material, in particular one of the III-V semiconductor
family, for example GaSb or an indium alloy like InAs or InSb.
10. The optical storage medium of one of the preceding claims 1-8, wherein the super-resolution
material comprises a phase-change material, for example a chalcogenide material like
GeSbTe or AgInSbTe.
11. Optical storage medium of one of the preceding claims, wherein the optical storage
medium comprises tracks having a track pitch being below the diffraction limit of
lambda/2NA of a corresponding pickup for reading of the data, NA being a numerical
aperture of the pickup.
12. Optical storage medium of one of the preceding claims, wherein the optical storage
medium does not include a reflective layer.
13. The optical storage medium of one of the preceding claims, wherein the reflectivity
factor of the optical storage medium is below 10% for light intensities being below
the super-resolution threshold of the super-resolution material.
14. Optical storage medium of one of the preceding claims, comprising a cover layer (7)
above the active layer (4) and a dielectric layer (6) arranged between the active
layer (4) and the cover layer (7), the storage medium being designed for operation
with a laser beam penetrating first the cover layer (7).
15. The optical storage medium of one of the preceding claims, wherein the optical storage
medium is an optical disc, and wherein the data layer (3) is a read-only data layer
with a pit structure.