(19)
(11) EP 2 333 827 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
24.08.2016 Bulletin 2016/34

(45) Mention of the grant of the patent:
29.06.2016 Bulletin 2016/26

(21) Application number: 10015288.3

(22) Date of filing: 03.12.2010
(51) International Patent Classification (IPC): 
H01L 21/8252(2006.01)
H01L 29/267(2006.01)
H01L 29/205(2006.01)
 H01L 27/06(2006.01)
H01L 21/761(2006.01)

(54)

Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same

Monolithisches integriertes zusammengesetztes Halbleiterbauelement der Gruppe III-V und Gruppe IV sowie Verfahren zu seiner Herstellung

Dispositif de semi-conducteurs de groupe III-V et de groupe IV composite intégré monolithique et son procédé de fabrication

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 10.12.2009 US 653236

(43) Date of publication of application:
15.06.2011 Bulletin 2011/24

(73) Proprietor: Infineon Technologies Americas Corp.
El Segundo, CA 90245 (US)

(72) Inventor:
  • Briere, Michael A.
    Woonsocket, RI 02895 (US)

(74) Representative: Dr. Weitzel & Partner 
Patent- und Rechtsanwälte mbB Friedenstrasse 10
89522 Heidenheim
89522 Heidenheim (DE)


(56) References cited: : 
EP-A2- 0 905 760
US-A- 5 064 781
US-A1- 2003 139 012
US-A1- 2007 105 256
 EP-A2- 1 089 338
US-A1- 2003 022 395
US-A1- 2007 048 975
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).