(57) High-electron-mobility field-effect transistor (100, 105, 110) comprising a multilayer
stack, fabricated in a z-direction, comprising a substrate (3) on which is arranged
a semiconductor bar (2) comprising a buffer layer (8), an active layer (7) and a heterojunction
(15) that extends continuously in an xy-plane perpendicular to the z-direction, the
transistor comprising electrodes (4, 5, 6) deposited on the side (20) of the semiconductor
bar opposite the substrate (3), called the top side (20), the electrodes (4, 5, 6)
extending longitudinally in a longitudinal y-direction and being spaced out in a transverse
x-direction orthogonal to the y-direction so that a gate (6) is placed between a source
(4) and a drain (5) adjacent to said source (4), the semiconductor bar (2) comprising
at least one elementary region (ei), said elementary region (ei) being a region extending
continuously in the transverse direction from a source (4) as far as a drain (5) adjacent
to said source (4), which source and drain extend along their entire length over said
elementary region (ei), in which region at least one isolating well (19) and at least
one conductive region (18) extend continuously, over the whole transverse dimension
of the elementary region (ei).
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