VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS AND METHODS OF MAKING - Patent 2345082

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EP 2 345 082 A2

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(88)	Date of publication A3:
	15.07.2010

(43)	Date of publication:
	20.07.2011 Bulletin 2011/29

(21)	Application number: 09825407.1

(22)	Date of filing: 05.11.2009

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International Patent Classification (IPC):

H01L 29/78^(2006.01)

H01L 21/336^(2006.01)

(86)	International application number:
	PCT/US2009/063391

(87)	International publication number:
	WO 2010/054073 (14.05.2010 Gazette 2010/19)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
	Designated Extension States:
	AL BA RS

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Priority:

05.11.2008 US 111437 P

(71)	Applicant: Semisouth Laboratories, Inc.
	Starkville, MS 39759 (US)

(72)	Inventors:
	SHERIDAN, David, C. Starkville, MS 39759 (US) RITENOUR, Andrew, P. Starkville, MS 39759 (US)

(74)	Representative: Clark, Jane Anne et al
	Mathys & Squire LLP 120 Holborn London EC1N 2SQ London EC1N 2SQ (GB)

(54)	VERTICAL JUNCTION FIELD EFFECT TRANSISTORS HAVING SLOPED SIDEWALLS AND METHODS OF MAKING