(19)
(11) EP 2 377 153 A1

(12)

(43) Date of publication:
19.10.2011 Bulletin 2011/42

(21) Application number: 08875786.9

(22) Date of filing: 19.12.2008
(51) International Patent Classification (IPC): 
H01L 21/762(2006.01)
H01L 21/20(2006.01)
 H01L 33/00(2010.01)
(86) International application number:
PCT/IB2008/003597
(87) International publication number:
WO 2010/070377 (24.06.2010 Gazette 2010/25)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

(71) Applicant: S.O.I.Tec Silicon on Insulator Technologies
38190 Bernin (FR)

(72) Inventors:
  • LETERTRE, Fabrice
    F-38240 Meylan (FR)
  • BETHOUX, Jean-Marc
    F-38100 Grenoble (FR)
  • BOUSSAGOL, Alice
    F-38190 Villard Bonnot (FR)

(74) Representative: Collin, Jérôme et al
Cabinet Régimbeau 20, rue de Chazelles
F-75847 Paris Cedex 17
F-75847 Paris Cedex 17 (FR)

   


(54) STRAIN ENGINEERED COMPOSITE SEMICONDUCTOR SUBSTRATES AND METHODS OF FORMING SAME