(19)
(11) EP 2 394 299 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
25.01.2017 Bulletin 2017/04

(45) Mention of the grant of the patent:
23.11.2016 Bulletin 2016/47

(21) Application number: 09786348.4

(22) Date of filing: 03.02.2009
(51) International Patent Classification (IPC): 
H01L 29/417(2006.01)
H01L 29/66(2006.01)
H01L 29/872(2006.01)
H01L 21/74(2006.01)
H01L 29/08(2006.01)
 H01L 29/51(2006.01)
H01L 29/778(2006.01)
H01L 29/20(2006.01)
H01L 27/06(2006.01)
(86) International application number:
PCT/IB2009/051306
(87) International publication number:
WO 2010/089632 (12.08.2010 Gazette 2010/32)

(54)

SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

HALBLEITERSTRUKTUR UND VERFAHREN ZUM HERSTELLEN EINER HALBLEITERSTRUKTUR

STRUCTURE SEMI-CONDUCTRICE ET PROCÉDÉ DE FABRICATION D'UNE TELLE STRUCTURE

(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

(43) Date of publication of application:
14.12.2011 Bulletin 2011/50

(73) Proprietor: NXP USA, Inc.
Austin TX 78735 (US)

(72) Inventor:
  • RENAUD, Philippe
    F-31270 Cugnaux (FR)

(74) Representative: Freescale law department - EMEA patent ops 
NXP Semiconductors, 134 avenue du Général Eisenhower BP 72329
31023 Toulouse Cedex 1
31023 Toulouse Cedex 1 (FR)


(56) References cited: : 
EP-A- 1 109 266
US-A1- 2007 045 765
 US-A1- 2006 175 633
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).