TECHNICAL FIELD
[0001] The present invention relates to a solar cell with a connecting sheet, a solar cell
module, and a method of fabricating a solar cell with a connecting sheet.
BACKGROUND ART
[0002] In recent years, the expectation for solar cells that convert solar energy into electric
energy as the energy source for the next generation has increased significantly from
the standpoint of protecting global environment. Among the various types of solar
cells employing compound semiconductor and/or organic material, solar cells employing
silicon crystal have become the main stream.
[0003] Solar cells that are now most fabricated in quantity and available on the market
are the double-sided electrode type solar cells based on a configuration in which
an n electrode is formed at the surface corresponding to the sunlight incident side
(light receiving face), and a p electrode is formed at the surface opposite to the
light receiving face side (back surface).
[0004] In addition, Japanese Patent Laying-Open No.
2005-310830 (Patent Literature 1), for example, discloses a back electrode type solar cell absent
of an electrode at the light receiving face of the solar cell, and having the n electrode
and p electrode formed only at the back surface of the solar cell.
[0005] The electric energy that can be utilized by a single back electrode type solar cell
of the configuration disclosed in Patent Literature 1 is limited. Therefore, an approach
to electrically connect a plurality of back electrode type solar cells of the aforementioned
configuration to obtain a solar cell module is now under study.
CITATION LIST
PATENT LITERATURE
SUMMARY OF INVENTION
TECHNICAL PROBLEM
[0007] As a method of obtaining a solar cell module by electrically connecting a plurality
of back electrode type solar cells, there is known the method of obtaining a solar
cell module by sealing a solar cell with a connecting sheet that is a back electrode
type solar cell placed on a connecting sheet, by means of a sealing material.
[0008] An example of a method of producing a solar cell module by sealing the aforementioned
solar cell with a connecting sheet by a sealing material will be described hereinafter
with reference to the schematic sectional views of Fig. 8(a) and (b).
[0009] Referring to Fig. 8(a), a solar cell with a connecting sheet is produced by placing
a back electrode type solar cell 80 on a connecting sheet 100.
[0010] In this solar cell with a connecting sheet, an electrode 6 for first conductivity
type in contact with an impurity diffusion region 2 for first conductivity type at
the back surface of a semiconductor substrate 1 of back electrode type solar cell
80 is placed on a wire 12 for first conductivity type formed on an insulative base
material 11 of connecting sheet 100, and an electrode 7 for second conductivity type
in contact with an impurity diffusion region 3 for second conductivity type at the
back surface of semiconductor substrate 1 of back electrode type solar cell 80 is
placed on a wire 13 for second conductivity type formed on insulative base material
11 of connecting sheet 100.
[0011] A texture structure is formed at the light receiving face of semiconductor substrate
1 in back electrode type solar cell 80. An antireflection film 5 is formed on the
texture structure. Furthermore, a passivation film 4 is formed at the back surface
of semiconductor substrate 1 of back electrode type solar cell 80.
[0012] Referring to Fig. 8(b), by placing and heating the solar cell with a connecting sheet
produced as set forth above between a transparent substrate 17 such as a glass substrate
including a sealing material 18 such as ethylene vinyl acetate and a back film 19
such as a polyester film including sealing material 18, there is produced a solar
cell module having back electrode type solar cell 80 constituting a solar cell with
a connecting sheet sealed in sealing material 18.
[0013] The aforementioned method is advantageous in that a solar cell module can be fabricated
effectively since a plurality of back electrode type solar cells 80 can be connected
electrically by just placing each back electrode type solar cell 80 on connecting
sheet 100.
[0014] However, in the case where the solar cell with a connecting sheet is heated in the
sealing step without physical fixing between back electrode type solar cell 80 and
connecting sheet 100 according to the above-described method, position deviation in
back electrode type solar cell 80 relative to connecting sheet 100 may occur due to
thermal expansion of semiconductor substrate 1 in back electrode type solar cell 80,
flowability of sealing material 18, and the like.
[0015] Japanese Patent Laying-Open No.
2001-036118 (Patent Literature 2) discloses a method of preventing position deviation in a double-sided
electrode type solar cell by curing a portion of the sealing material in advance for
fixation.
[0016] Specifically, the method disclosed in Patent Literature 2 includes the steps of applying
in advance an ultraviolet curable resin to the light receiving face side of a double-sided
electrode type solar cell, installing the double-sided electrode type solar cell,
applying a thermosetting liquid resin to the back surface side of the double-sided
electrode type solar cell, irradiating the ultraviolet curable resin with ultraviolet
ray such that it cures to fix the position of the double-sided electrode type solar
cell, and then heating the thermosetting liquid resin such that it cures to seal the
double-sided electrode type solar cell.
[0017] The method of Patent Literature 2 requires raising the cross-linking rate of the
ultraviolet curable resin used for fixing the double-sided electrode type solar cell
from the standpoint of preventing position deviation in the double-sided electrode
type cell. However, the adherence with the thermosetting liquid resin will be degraded
if the cross-linking rate of the ultraviolet curable resin is raised, leading to the
problem of degradation in the sealing property of the double-sided electrode type
cell.
[0018] Moreover, the pitch between electrodes of back electrode type solar cell 80 in the
aforementioned solar cell with a connecting sheet was extremely small, requiring considerably
high position accuracy of back electrode type solar cell 80 relative to connecting
sheet 100. Therefore, there is a need for a configuration of a solar cell with a connecting
sheet and a solar cell module, as well as a method of fabricating a solar cell with
a connecting sheet, corresponding to such problems.
[0019] In view of the foregoing, an object of the present invention is to provide a solar
cell with a connecting sheet, a solar cell module, and a method of fabricating a solar
cell with a connecting sheet, allowing effective suppression of position deviation
in a back electrode type solar cell relative to a connecting sheet.
SOLUTION TO PROBLEM
[0020] The present invention is directed to a method of fabricating a solar cell with a
connecting sheet including a back electrode type solar cell and a connecting sheet.
The back electrode type solar cell includes a semiconductor substrate where an impurity
diffusion region for first conductivity type and an impurity diffusion region for
second conductivity type are formed, an electrode for first conductivity type formed
at one face side of the semiconductor substrate corresponding to the impurity diffusion
region for first conductivity type, and an electrode for second conductivity type
formed at the one face side of the semiconductor substrate corresponding to the impurity
diffusion region for second conductivity type. The connecting sheet includes an insulative
base material, a wire for first conductivity type arranged at the insulative base
material, and a wire for second conductivity type arranged at the insulative base
material. The method of fabricating a solar cell with a connecting sheet includes
the step of arranging the back electrode type solar cell on the connecting sheet such
that the electrode for first conductivity type of the back electrode type solar cell
is arranged on the wire for first conductivity type of the connecting sheet and the
electrode for second conductivity type of the back electrode type solar cell is arranged
on the wire for second conductivity type of the connecting sheet, and temporary fixing
at least a portion of a peripheral region of the back electrode type solar cell to
the connecting sheet.
[0021] The method of fabricating a solar cell with a connecting sheet of the present invention
preferably includes the step of applying a first adhesive in advance to the back electrode
type solar cell and/or connecting sheet prior to the arranging step. The temporary
fixing step preferably includes the step of curing the first adhesive located at at
least a portion of the peripheral region of the back electrode type solar cell.
[0022] In the method of fabricating a solar cell with a connecting sheet of the present
invention, the temporary fixing step preferably includes the step of curing a second
adhesive including ultraviolet curable resin arranged between at least a portion of
the peripheral region of the back electrode type solar cell and the connecting sheet.
[0023] In the method of fabricating a solar cell with a connecting sheet of the present
invention, the temporary fixing step preferably includes the step of attaching an
adhesive tape between at least a portion of a peripheral region of the back electrode
type solar cell and the connecting sheet.
[0024] In the method of fabricating a solar cell with a connecting sheet of the present
invention, the back electrode type solar cell takes substantially an octagon shape
having 4 corners corresponding to short sides or arcs. The peripheral region of the
back electrode type solar cell preferably includes 4 corners.
[0025] Furthermore, the present invention is directed to a method of fabricating a solar
cell module including the step of sealing a solar cell with a connecting sheet, produced
by the method of fabricating a solar cell with a connecting sheet set forth above,
on a transparent substrate by a sealing material.
[0026] Moreover, the present invention is directed to a solar cell with a connecting sheet
including a back electrode type solar cell and a connecting sheet. The back electrode
type solar cell includes a semiconductor substrate where an impurity diffusion region
for first conductivity type and an impurity diffusion region for second conductivity
type are formed, an electrode for first conductivity type formed at one face side
of the semiconductor substrate corresponding to the impurity diffusion region for
first conductivity type, and an electrode for second conductivity type formed at the
one face side of the semiconductor substrate corresponding to the impurity diffusion
region for second conductivity type. The connecting sheet includes an insulative base
material, a wire for first conductivity type arranged at the insulative base material,
and a wire for second conductivity type arranged at the insulative base material.
The back electrode type solar cell is arranged on the connecting sheet such that the
electrode for first conductivity type of the back electrode type solar cell is electrically
connected to the wire for first conductivity type of the connecting sheet, and the
electrode for second conductivity type of the back electrode type solar cell is electrically
connected to the wire for second conductivity type of the connecting sheet. A first
adhesive material is arranged between the back electrode type solar cell and the connecting
sheet. In addition, a second adhesive material for bonding the back electrode type
solar cell to the connecting sheet is arranged at at least a portion of a peripheral
region of the back electrode type solar cell.
[0027] In addition, the present invention is directed to a solar cell module having the
above-described solar cell with a connecting sheet set forth above sealed on a transparent
substrate by a sealing material.
ADVANTAGEOUS EFFECTS OF INVENTION
[0028] According to the present invention, there can be provided a solar cell with a connecting
sheet, a solar cell module, and a method of fabricating a solar cell with a connecting
sheet, allowing effective suppression of position deviation in a back electrode type
solar cell relative to a connecting sheet.
BRIEF DESCRIPTION OF DRAWINGS
[0029]
Fig. 1 is a schematic sectional view of an example of a solar cell module of the present
invention.
Figs. 2(a)-(g) are schematic sectional views illustrating an example of a method of
fabricating a back electrode type solar cell employed in the solar cell module of
the present invention.
Fig. 3 is a schematic plan view of an example of a back surface of a back electrode
type solar cell employed in the solar cell module of the present invention.
Figs. 4(a)-(d) are schematic sectional views illustrating an example of a method of
fabricating a connecting sheet employed in the solar cell module of the present invention.
Fig. 5 is a schematic plan view of an example of a connecting sheet employed in the
solar cell module of the present invention.
Figs. 6(a)-(d) are schematic sectional views illustrating an example of a method of
fabricating a solar cell with a connecting sheet of the present invention.
Fig. 7 is a schematic plan view illustrating an example of an applied site of ultraviolet
curable resin in the present invention.
Figs. 8(a) and (b) are schematic sectional views illustrating an example of a method
of producing a solar cell module by sealing a solar cell with a connecting sheet by
a sealing material.
DESCRIPTION OF EMBODIMENTS
[0030] Embodiments of the present invention will be described hereinafter. In the drawings
of the present invention, the same reference characters represent the same or corresponding
elements.
[0031] Fig. 1 is a schematic sectional view of an example of a solar cell module of the
present invention. The solar cell module based on the configuration of Fig. 1 includes
a solar cell with a connecting sheet, configured so as to have a back electrode type
solar cell 8 arranged on a connecting sheet 10. The solar cell with a connecting sheet
is sealed in a sealing material 18 such as of ethylene vinyl acetate located at the
region between a transparent substrate 17 such as a glass substrate and a back film
19 such as a polyester film.
[0032] Back electrode type solar cell 8 includes a semiconductor substrate 1, an impurity
diffusion region 2 for first conductivity type and an impurity diffusion region 3
for second conductivity type formed at the back surface of semiconductor substrate
1, an electrode 6 for first conductivity type formed in contact with impurity diffusion
region 2 for first conductivity type, and an electrode 7 for second conductivity type
formed in contact with impurity diffusion region 3 for second conductivity type.
[0033] The light receiving face of semiconductor substrate 1 in back electrode type solar
cell 8 is formed with a concavo-convex structure such as a texture structure. An antireflection
film 5 is formed to cover the concavo-convex structure. Furthermore, a passivation
film 4 is formed at the back surface of semiconductor substrate 1 in back electrode
type solar cell 8.
[0034] In the present example, impurity diffusion region 2 for first conductivity type and
impurity diffusion region 3 for second conductivity type are formed in strips, each
extending towards the surface side and/or back side of the paper sheet of Fig. 1.
Impurity diffusion region 2 for first conductivity type and impurity diffusion region
3 for second conductivity type are arranged alternately with a predetermined distance
therebetween at the back surface of semiconductor substrate 1.
[0035] Also in the present example, electrode 6 for first conductivity type and electrode
7 for second conductivity type are formed in strips, each extending towards the surface
side and/or back side of the paper sheet of Fig. 1. Electrode 6 for first conductivity
type and electrode 7 for second conductivity type are formed along and in contact
with impurity diffusion region 2 for first conductivity type and impurity diffusion
region 3 for second conductivity type, respectively, at the back surface of semiconductor
substrate 1, via an opening provided in passivation film 4.
[0036] Connecting sheet 10 includes an insulative base material 11, a wire 12 for first
conductivity type and wire 13 for second conductivity type, formed in a predetermined
shape on the surface of insulative base material 11.
[0037] Each wire 12 for first conductivity type on insulative base material 11 of connecting
sheet 10 is formed facing a corresponding one electrode 6 for first conductivity type
at the back surface of back electrode type solar cell 8.
[0038] Each wire 13 for second conductivity type on insulative base material 11 of connecting
sheet 10 is formed facing a corresponding one electrode 7 for second conductivity
type at the back surface of back electrode type solar cell 8.
[0039] In the present example, wire 12 for first conductivity type and wire 13 for second
conductivity type are formed in strips, each extending towards the surface side and/or
back side of the paper sheet of Fig. 1.
[0040] The above-described back electrode type solar cell 8 and connecting sheet 10 are
bonded by ultraviolet curable resin 20 arranged at at least a portion of the peripheral
region of back electrode type solar cell 8, and also bonded by a connecting material
16 arranged at the region between back electrode type solar cell 8 located at the
inner side of the peripheral region of back electrode type solar cell 8 having ultraviolet
curable resin 20 arranged and connecting sheet 10.
[0041] An example of a method of fabricating a solar cell module based on the configuration
shown in Fig. 1 will be described hereinafter. First, a method of forming a back electrode
type solar cell 8 will be described, followed by a method of forming a connecting
sheet 10, and then a method of forming a solar cell with a connecting sheet by bonding
back electrode type solar cell 8 and connecting sheet 10. However, the sequence of
forming back electrode type solar cell 8 and connecting sheet 10 is not particularly
limited in the present invention.
[0042] Referring to the schematic sectional view of Fig. 2(a), an ingot is sliced, for example,
to prepare a semiconductor substrate 1 with a slice damage 1a at the surface. For
semiconductor substrate 1, a silicon substrate such as of polycrystalline silicon
or single crystal silicon having the conductivity type of n type or p type can be
used, for example.
[0043] Referring to the schematic sectional view of Fig. 2(b), slice damage 1a is removed
from the surface of semiconductor substrate 1. This removal of slice damage 1a can
be performed, when semiconductor substrate 1 is formed of the aforementioned silicon
substrate, by etching the surface of the silicon substrate after slicing with a mixed
acid of hydrogen fluoride aqueous solution and nitric acid, or an alkali aqueous solution
such as of sodium hydroxide.
[0044] Although the size and shape of semiconductor substrate 1 after removal of slice damage
1a is not particularly limited, the thickness of semiconductor substrate 1 can be
set to be greater than or equal to 50 µm and less than or equal to 400 µm, particularly
preferably to be approximately 160 µm.
[0045] Referring to the schematic sectional view of Fig. 2(c), impurity diffusion region
2 for first conductivity type and impurity diffusion region 3 for second conductivity
type are formed at the back surface of semiconductor substrate 1. Impurity diffusion
region 2 for first conductivity type can be formed by, for example, vapor phase diffusion
using gas including first conductivity type impurities. Impurity diffusion region
3 for second conductivity type can be formed by, for example, vapor phase diffusion
using gas including second conductivity type impurities.
[0046] Impurity diffusion region 2 for first conductivity type is not particularly limited
as long as the region includes first conductivity type impurities, and indicates n
type or p type conductivity. For first conductivity type impurities, n type impurities
such as phosphorus can be employed when the first conductivity type corresponds to
the n type. When the first conductivity type corresponds to the p type, p type impurities
such as boron, aluminium or the like can be used.
[0047] Impurity diffusion region 3 for second conductivity type is not particularly limited
as long as the region includes second conductivity type impurities, and indicates
a conductivity type opposite to that of impurity diffusion region 2 for first conductivity
type. For second conductivity type impurities, n type impurities such as phosphorus,
for example, can be employed when the second conductivity type corresponds to the
n type. When the second conductivity type corresponds to the p type, p type impurities
such as boron, aluminium, or the like can be used.
[0048] The first conductivity type may be either the n type or p type, and the second conductivity
type is opposite to the first conductivity type. Specifically, when the first conductivity
type corresponds to the n type, the second conductivity type corresponds to the p
type. When the first conductivity type corresponds to the p type, the second conductivity
type corresponds to the n type.
[0049] For gas including first conductivity type impurities, gas including n type impurities
such as phosphorus, POCl
3, for example, can be used. When the first conductivity type corresponds to the p
type, gas including p type impurities such as boron, BBr
3, for example, can be used.
[0050] For gas including second conductivity type impurities, gas including n type impurities
such as phosphorus, POCl
3, for example, can be used. When the second conductivity type corresponds to the p
type, gas including p type impurities such as boron, BBr
3, for example, can be used.
[0051] Referring to the schematic sectional view of Fig. 2(d), passivation film 4 is formed
at the back surface of semiconductor substrate 1. Passivation film 4 can be formed
by thermal oxidation, plasma CVD (Chemical Vapor Deposition), and the like.
[0052] Passivation film 4 may include, but not limited to, a silicon oxide film, a silicon
nitride film, a stacked layer of a silicon oxide film and silicon nitride film, or
the like.
[0053] The thickness of passivation film 4 can be set greater than or equal to 0.05 µm and
less than or equal to 1 µm, for example, particularly preferably set to be approximately
0.2 µm.
[0054] Referring to the schematic sectional view of Fig. 2(e), following the formation of
a concavo-convex structure such as a texture structure all over the light receiving
face of semiconductor substrate 1. antireflection film 5 is formed on the concavo-convex
structure.
[0055] The texture structure can be formed by, for example, etching the light receiving
face of semiconductor substrate 1. For example, when semiconductor substrate 1 is
a silicon substrate, the light receiving face of semiconductor substrate 1 can be
etched using an etchant obtained by adding isopropyl alcohol to an alkali aqueous
solution such as sodium hydroxide or potassium hydroxide, and heating the liquid greater
than or equal to 70°C and less than or equal to 80°C.
[0056] Antireflection film 5 can be formed by plasma CVD, or the like. Antireflection film
5 may include, but not limited to, a silicon nitride film.
[0057] Referring to the schematic sectional view of Fig. 2(f), a contact hole 4a and a contact
hole 4b are formed by removing some of passivation film 4 at the back surface of semiconductor
substrate 1. Contact hole 4a is formed such that at least a portion of the surface
of impurity diffusion region 2 for first conductivity type is exposed. Contact hole
4b is formed such that at least a portion of the surface of impurity diffusion region
3 for second conductivity type is exposed.
[0058] Each of contact hole 4a and contact hole 4b may be formed by various methods such
as forming a resist pattern having an opening at the region corresponding to the formation
sites of contact holes 4a and 4b on passivation film 4 by photolithography, and then
etching away passivation film 4 through the opening of the resist pattern, or such
as applying etching paste to the region of passivation film 4 corresponding to the
formation sites of contact holes 4a and 4b, followed by heating to remove passivation
film 4 by etching.
[0059] Referring to the schematic sectional view of Fig. 2(g), electrode 6 for first conductivity
type in contact with impurity diffusion region 2 for first conductivity type through
contact hole 4a and electrode 7 for second conductivity type in contact with impurity
diffusion region 3 for second conductivity type through contact hole 4b are formed
to produce back electrode type solar cell 8.
[0060] Here, an electrode formed of metal such as silver can be employed for electrode 6
for first conductivity type and electrode 7 for second conductivity type.
[0061] Fig. 3 is a schematic plan view of an example of a back surface of back electrode
type solar cell 8 produced as set forth above. At the back surface of back electrode
type solar cell 8, each of electrode 6 for first conductivity type and electrode 7
for second conductivity type is formed in strips. The plurality of strip-like electrodes
6 for first conductivity type are all connected to one strip-like collector electrode
60 for first conductivity type. The plurality of strip-like electrodes 7 for second
conductivity type are all connected to one strip-like collector electrode 70 for second
conductivity type. In the present example, collector electrode 60 for first conductivity
type is formed to extend in a direction perpendicular to the longitudinal direction
of strip-like electrode 6 for first conductivity type. Collector electrode 70 for
second conductivity type is formed to extend in a direction perpendicular to the longitudinal
direction of strip-like electrode 7 for second conductivity type.
[0062] At the back surface of back electrode type solar cell 8 shown in Fig. 3, one collector
electrode 60 for first conductivity type and a plurality of electrodes 6 for first
conductivity type constitute one comb-shaped electrode. One collector electrode 70
for second conductivity type and a plurality of electrodes 7 for second conductivity
type constitute one comb-shaped electrode. An electrode 6 for first conductivity type
and an electrode 7 for second conductivity type corresponding to the comb teeth of
the comb-shaped electrode are arranged facing each other such that each one is interdigitated
with another. One strip-like impurity diffusion region 2 for first conductivity type
is arranged at the back surface portion of semiconductor substrate I where strip-like
electrode 6 for first conductivity type is in contact. One strip-like impurity diffusion
region 3 for second conductivity type is arranged at the back surface portion of semiconductor
substrate 1 where strip-like electrode 7 for second conductivity type is in contact.
[0063] Connecting sheet 10 can be produced as set forth below, for example. Referring to
the schematic sectional view of Fig. 4(a), a conductor layer 41 is formed on the surface
of insulative base material 11. For insulative base material 11, a substrate formed
of, but not limited to, resin such as polyester, polyethylene naphthalate, polymide,
or the like, for example, can be used.
[0064] The thickness of insulative base material 11 can be set greater than or equal to
10 µm and less than or equal to 200 µm, for example. Particularly, the thickness thereof
is preferably approximately 25 µm.
[0065] Conductor layer 41 is formed of, but not limited to, metal such as copper, for example.
[0066] Referring to the schematic sectional view of Fig. 4(b), a resist pattern 42 is formed
on conductor layer 41 at the surface of insulative base material 11. At this stage,
resist pattern 42 is configured to have an opening at a site other than the formation
site of wire 12 for first conductivity type and wire 13 for second conductivity type.
The resist constituting resist pattern 42 can be formed using the conventionally well
known type. An application method such as by screen printing, dispenser application,
ink jet application, or the like may be employed.
[0067] Referring to the schematic sectional view of Fig. 4(c), conductor layer 41 is subjected
to patterning by removing the portion of conductor layer 41 exposed at resist pattern
42 in the direction of arrow 43 to form wire 12 for first conductivity type and wire
13 for second conductivity type from the remainder of conductor layer 41.
[0068] Conductor layer 41 can be removed by wet etching or the like employing the solution
of acid or alkaline.
[0069] Referring to the schematic sectional view of Fig. 4(d), resist pattern 42 is completely
removed from the surface of wire 12 for first conductivity type and wire 13 for second
conductivity type to produce connecting sheet 10.
[0070] Fig. 5 is a schematic plan view of an example of a surface of connecting sheet 10
produced as set forth above. On the surface of insulative base material 11 of connecting
sheet 10, wire 12 for first conductivity type and wire 13 for second conductivity
type are formed in strips. On the surface of insulative base material 11 of connecting
sheet 10, strip-like connecting wire 14 is formed. Wire 12 for first conductivity
type and wire 13 for second conductivity type are electrically connected by connecting
wire 14. Connecting wire 14 can be formed from the remainder of conductor layer 41,
likewise with wire 12 for first conductivity type and wire 13 for second conductivity
type.
[0071] By the configuration set forth above, all wires 12 for first conductivity type and
wires 13 for second conductivity type constituting the comb shape, adjacent to each
other, are electrically connected through connecting wire 14, except for a wire 12
for first conductivity type and a wire 13 for second conductivity type located at
respective ends of connecting sheet 10. Accordingly, back electrode type solar cells
arranged adjacent to each other on connecting sheet 10 will be electrically connected
with each other. Thus, all the back electrode type solar cells arranged on connecting
sheet 10 will be electrically connected in series.
[0072] A solar cell with a connecting sheet can be produced as set forth below, for example.
[0073] Referring to the schematic sectional view of Fig. 6(a), a connecting material 16
is applied on the surface of connecting sheet 10 produced as set forth above. Connecting
material 16 can be applied by a method such as by screen printing, dispenser application,
ink jet application, or the like. For connecting material 16, thermosetting resin
or the like, for example, may be employed. For thermosetting resin, resin having electrical
insulation, and cured by heating can be employed without particular limitation. For
example, the conventional well-known thermosetting resin can be employed.
[0074] For connecting material 16, a conductive connecting material can be employed. For
a conductive connecting material, ACP (Anisotropic Conductive Paste) including conductive
particles for achieving favorable electrical connection with thermosetting resin set
forth above, eutectic solder, or a conductive adhesive may be employed. In the case
where a conductive connecting material is employed for connecting material 16, connecting
material 16 is preferably applied restrictively to the surface of the wire on insulative
base material 11 of connecting sheet 10.
[0075] Referring to the schematic sectional view of Fig. 6(b), a back electrode type solar
cell 8 is formed on connecting sheet 10.
[0076] Referring to the schematic sectional view of Fig. 6(c), back electrode type solar
cell 8 is arranged on connecting sheet 10 such that electrode 6 for first conductivity
type of back electrode type solar cell 8 is arranged on wire 12 for first conductivity
type of connecting sheet 10, and electrode 7 for second conductivity type of back
electrode type solar cell 8 is arranged on wire 13 for second conductivity type of
connecting sheet 10. At this stage, connecting material 16 located between electrode
6 for first conductivity type of back electrode type solar cell 8 and wire 12 for
first conductivity type of connecting sheet 10, as well as connecting material 16
located between electrode 7 for second conductivity type of back electrode type solar
cell 8 and wire 13 for second conductivity type of connecting sheet 10, is pushed
outwards. Accordingly, electrode 6 for first conductivity type and wire 12 for first
conductivity type form contact, ensuring electrical connection. Also, electrode 7
for second conductivity type and wire 13 for second conductivity type of connecting
sheet 10 form contact, ensuring electrical connection.
[0077] Referring to the schematic sectional view of Fig. 6(d), ultraviolet curable resin
20 is then applied to at least a portion of the peripheral region of back electrode
type solar cell 8 under the state in which back electrode type solar cell 8 is placed
on connecting sheet 10. Ultraviolet curable resin 20 can be applied by, for example,
screen printing, dispenser application, ink jet application, or the like. For ultraviolet
curable resin 20, any resin can be employed as long as it cures by irradiation with
ultraviolet ray (light having a wavelength of approximately 1 nm - 400 nm). For example,
the conventional well-known ultraviolet curable resin can be employed.
[0078] Fig. 7 is a schematic plan view illustrating an example of the application sites
of ultraviolet curable resin in the present invention. Ultraviolet curable resin 20
is applied to respective sites at a portion of the four corners of back electrode
type solar cell 8. The four corners correspond to the short sides of an octagon in
plan view of back electrode type solar cell 8.
[0079] By applying ultraviolet curable resin 20 to the corners of back electrode type solar
cell 8 as set forth above, the distance between back electrode type solar cells 8
adjacent in the vertical direction and horizontal direction on connecting sheet 10
can be reduced, as compared to the case where ultraviolet curable resin 20 is applied
to a region not at a corner of back electrode type solar cell 8 (in the present example,
the long sides of the octagon).
[0080] Since back electrode type solar cells 8 can be arranged more densely in this case,
the area of the light receiving face per unit area of a solar cell with a connecting
sheet and a solar cell module can be increased. Therefore, the properties of the solar
cell with a connecting sheet and the solar cell module can be improved.
[0081] The above description is based on the case where ultraviolet curable resin 20 is
applied at a site at a portion of each of the four corners of back electrode type
solar cell 8. Alternatively, ultraviolet curable resin 20 may be applied to one entire
corner among the four corners of back electrode type solar cell 8.
[0082] The above description is based on the case where ultraviolet curable resin 20 is
applied to all the four corners of back electrode type solar cell 8. Alternatively,
ultraviolet curable resin 20 may be applied to at least one of the four corners of
back electrode type solar cell 8.
[0083] The above description is based on the case where the four corners of back electrode
type solar cell 8 correspond to the short sides of an octagon. Alternatively, at least
one of the four corners may be round such as an arc.
[0084] Then, ultraviolet curable resin 20 is irradiated with ultraviolet ray for curing,
whereby connecting sheet 10 is bonded to back electrode type solar cell 8 for temporary
fixing.
[0085] By sandwiching and heating the solar cell with a connecting sheet produced as set
forth above between transparent substrate 17 such as a glass substrate including sealing
material 18 such as ethylene vinyl acetate and back film 19 such as polyester film
including sealing material 18, a solar cell module is produced by sealing back electrode
type solar cell 8 constituting the solar cell with a connecting sheet within sealing
material 18.
[0086] In the case where connecting material 16 located between back electrode type solar
cell 8 and connecting sheet 10 constituting the solar cell with a connecting sheet
is formed of thermosetting resin, connecting material 16 cures by being heated, whereby
back electrode type solar cell 8 and connecting sheet 10 are bonded.
[0087] Thus, ultraviolet curable resin 20 is applied to at least a portion of the periphery
region of back electrode type solar cell 8, irradiated with ultraviolet ray for curing
to temporarily fix back electrode type solar cell 8 with connecting sheet 10, followed
by sealing with sealing material 18. Therefore, even when solar cell with a connecting
sheet is heated in the sealing step, position deviation in back electrode type solar
cell 8 relative to connecting sheet 10, caused by thermal expansion of semiconductor
substrate 1 of back electrode type solar cell 8 and/or flowability of sealing material
18, can be suppressed.
[0088] Thus, even in the case where the inter-electrode pitch between adjacent electrode
6 for first conductivity type and electrode 7 for second conductivity type in back
electrode type solar cell 8 is extremely small, the efficiency of fabricating a solar
cell with a connecting sheet and a solar cell module can be improved significantly
since the position accuracy of back electrode type solar cell 8 relative to connecting
sheet 10 can be maintained at a considerably high level.
[0089] Since the curing site and curing level of ultraviolet curable resin 20 can be adjusted
appropriately by controlling the site and amount of ultraviolet irradiation, the quality
of the solar cell module can be stabilized by adjusting individually the temporary
fixing state of back electrode type solar cell 8. The usage of ultraviolet curable
resin 20 that is rendered transparent subsequent to curing is preferable from the
standpoint of not disturbing the appearance of the solar cell module.
[0090] An adhesive tape or the like may be used instead of ultraviolet curable resin 20.
Since an adhesive tape is not modified in shape in the arranging mode, the peripheral
region of back electrode type solar cell 8 corresponding to temporary fixing can be
determined with high accuracy, allowing the region not used for temporary fixing to
be employed as the power generating region. Thus, the power generating efficiency
of back electrode type solar cell 8 can be further improved.
[0091] The connecting material for temporarily fixing back electrode type solar cell 8 with
connecting sheet 10 is not limited to ultraviolet curable resin 20 or the adhesive
tape set forth above. All materials allowing connection between back electrode type
solar cell 8 and connecting sheet 10 are encompassed.
[0092] The arrangement of the adhesive for temporary fixing between back electrode type
solar cell 8 and connecting sheet 10 is not limited to the manner of arrangement by
application, adherence, or the like under the state where back electrode type solar
cell 8 is placed on connecting sheet 10. The manner of arranging in advance the connecting
material to connecting sheet 10 and/or back electrode type solar cell 8 by attaching
or the like is included. For example, in the case where the adhesive is arranged such
that a portion thereof covers a portion of the light receiving face of back electrode
type solar cell 8, as shown in Fig. 6(d), an adhesive can be arranged with back electrode
type solar cell 8 placed on connecting sheet 10. Furthermore, in the case where the
adhesive is to be less visible from the light receiving face of the solar cell module,
or in the case where the adhesive should not protrude from the light receiving face
of back electrode type solar cell 8, back electrode type solar cell 8 is to be placed
on connecting sheet 10 after an adhesive is applied in advance to connecting sheet
10 and/or back electrode type solar cell 8.
[0093] By curing only connecting material 16 located at at least a portion of the peripheral
region of back electrode type solar cell 8, at least a portion of the peripheral region
of back electrode type solar cell 8 may be attached to connecting sheet 10 for temporary
fixing. This is effective in reducing the fabrication cost of a solar cell module
since the usage of ultraviolet curable resin 20, adhesive tape, or the like is not
required.
[0094] Whatever measures are taken, temporary fixing to connecting sheet 10 is to be achieved
to maintain the state of back electrode type solar cell 8 arranged in registration
on connecting sheet 10 until a subsequent sealing step, such that electrode 6 for
first conductivity type of back electrode type solar cell 8 is electrically connected
to wire 12 for first conductive type of connecting sheet 10, and electrode 7 for second
conductivity type of back electrode type solar cell 8 is electrically connected to
wire 13 for second conductivity type of connecting sheet 10.
[0095] The concept of the back electrode type solar cell of the present invention is not
limited to a configuration in which both the electrode for first conductivity type
and the electrode for second conductivity type are formed on only one surface side
(back surface) of the semiconductor substrate set forth above, and encompasses all
configurations of the so-called back contact type solar cell (a solar cell based on
a configuration in which current is output from the back surface that is opposite
to the light receiving face of the solar cell) such as a MWT (Metal Wrap Through)
cell (a solar cell based on a configuration in which a portion of the electrode is
arranged in a through hole provided at the semiconductor substrate)
[0096] The concept of the solar cell with a connecting sheet of the present invention is
not limited to a configuration in which a plurality of back electrode type solar cells
are arranged on a connecting sheet, and encompasses the configuration in which one
back electrode type solar cell is arranged on a connecting sheet.
EXAMPLES
<Example>
[0097] First, thermosetting resin was applied onto the surface of a connecting sheet including
an insulative substrate having wire patterned after a predetermined form.
[0098] Then, a back electrode type solar cell having a surface of an octagon shape was placed
on a connecting sheet such that the electrodes of the back electrode type solar cell
were arranged on the wire of the connecting sheet.
[0099] Ultraviolet curable resin was applied to each of the short sides of the octagon corresponding
to the corners of the peripheral region of the back electrode type solar cell under
the state where the back electrode type solar cell was placed on the connecting sheet.
[0100] The ultraviolet curable resin was irradiated with ultraviolet ray to cure, whereby
the connecting sheet was bonded to the back electrode type solar cell for temporary
fixing.
[0101] Then, the solar cell with a connecting sheet produced as set forth above was sandwiched
between a glass substrate including ethylene vinyl acetate and a polyester film including
ethylene vinyl acetate, and subjected to heating. By the sealing treatment step of
sealing a back electrode type solar cell constituting a solar cell with a connecting
sheet within a sealing material, a solar cell module was produced.
[0102] The relative position of the back electrode type solar cell to the connecting sheet
was measured, prior to and after the sealing treatment step. The difference between
the relative position prior to the sealing treatment step and the relative position
after the sealing treatment step was calculated as the amount of position deviation.
The results are shown in Table 1.
[0103] The position deviation average value in Table 1 represents the average of the amount
of position deviation at 8 sites per one back electrode type solar cell. The position
deviation maximum value in Table 1 represents the maximum value of the position deviation
at 8 sites per one back electrode type solar cell.
<Comparative Example>
[0104] A comparative example was achieved in a manner similar to that of the example set
forth above, provided that application and curing of the aforementioned ultraviolet
curable resin were not carried out. The position deviation average value and position
deviation maximum value were similarly calculated. The results are shown in Table
1.
[Table 1]
| |
Position Deviation Average Value |
Position Deviation Maximum Value |
| Inventive Example |
30 µm |
55 µm |
| Comparative Example |
50 µm |
145 µm |
[0105] As shown in Table 1, the position deviation average value was 30 µm in the example
of the present invention whereas the position deviation average value in the comparative
example was 50 µm.
[0106] Furthermore, as shown in Table 1, the position deviation maximum value was 55 µm
in the example of the present invention whereas the position deviation maximum value
in the comparative example was 145 µm.
[0107] It was confirmed that, in the example where temporary fixing by means of ultraviolet
curable resin was carried out, the amount of position deviation was reduced by 20
µm in average and by 90 µm at most, as compared to the comparative example where temporary
fixing by means of ultraviolet curable resin was not carried out.
[0108] It should be understood that the embodiments and examples disclosed herein are illustrative
and non-restrictive in every respect. The scope of the present invention is defined
by the terms of the claims, rather than the description above, and is intended to
include any modification within the scope and meaning equivalent to the terms of the
claims.
INDUSTRIAL APPLICABILITY
[0109] The present invention is suitable for a solar cell with a connecting sheet, a solar
cell module, and a method of fabricating a solar cell with a connecting sheet.
REFERENCE SIGNS LIST
[0110] 1 semiconductor substrate; 1a slice damage; 2 impurity diffusion region for first
conductivity type; 3 impurity diffusion region for second conductivity type; 4 passivation
film; 4a, 4b contact hole; 5 antireflection film; 6 electrode for first conductivity
type; 7 electrode for second conductivity type; 8, 80 back electrode type solar cell;
10, 100 connecting sheet; 11 insulative base material; 12, 12a wire for first conductivity
type; 13, 13a wire for second conductivity type; 14 connecting wire; 16 connecting
material; 17 transparent substrate; 18 sealing material, 19 back film; 20 ultraviolet
curable resin; 41 conductor layer; 42 resist pattern; 43 arrow; 60 collector electrode
for first conductivity type; 70 collector electrode for second conductivity type.