METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH - Patent 2443658

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EP 2 443 658 A2

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(88)	Date of publication A3:
	24.02.2011

(43)	Date of publication:
	25.04.2012 Bulletin 2012/17

(21)	Application number: 10790237.1

(22)	Date of filing: 18.06.2010

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International Patent Classification (IPC):

H01L 29/73^(2006.01)
H01L 29/732^(2006.01)

H01L 21/311^(2006.01)

(86)	International application number:
	PCT/US2010/039114

(87)	International publication number:
	WO 2010/148271 (23.12.2010 Gazette 2010/51)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

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Priority:

19.06.2009 US 218751 P

(71)	Applicant: SS SC IP, LLC
	Jackson, MS 39213 (US)

(72)	Inventor:
	CHENG, Lin Starkville, Mississippi 39759 (US)

(74)	Representative: Clark, Jane Anne et al
	Mathys & Squire LLP 120 Holborn London EC1N 2SQ London EC1N 2SQ (GB)

(54)	METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH