<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd">
<ep-patent-document id="EP09786111A1" file="09786111.6" lang="fr" country="EP" doc-number="2462259" kind="A1" date-publ="20120613" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="fr"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCY..TRBGCZEEHUPLSK..HRIS..MTNO....SM..................</B001EP><B003EP>*</B003EP><B005EP>X</B005EP><B007EP>DIM360 Ver 2.15 (14 Jul 2008) -  1100000/0</B007EP></eptags></B000><B100><B110>2462259</B110><B130>A1</B130><B140><date>20120613</date></B140><B190>EP</B190></B100><B200><B210>09786111.6</B210><B220><date>20090804</date></B220><B240><B241><date>20120126</date></B241></B240><B250>fr</B250><B251EP>fr</B251EP><B260>fr</B260></B200><B400><B405><date>20120613</date><bnum>201224</bnum></B405><B430><date>20120613</date><bnum>201224</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>C25D   1/02        20060101AFI20110324BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>C25D   1/10        20060101ALI20110324BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>C25D   3/66        20060101ALI20110324BHEP        </text></classification-ipcr><classification-ipcr sequence="4"><text>C25D   9/08        20060101ALI20110324BHEP        </text></classification-ipcr><classification-ipcr sequence="5"><text>D01F   9/08        20060101ALI20110324BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>VORRICHTUNG ZUR HERSTELLUNG VON SI-NANODRÄHTEN MITTELS ELEKTROLYTISCHER ABSCHEIDUNG BEI RAUMTEMPERATUR, HERSTELLUNGSVERFAHREN DAFÜR UND AUF DIESE WEISE ERZEUGTE NANODRÄHTE</B542><B541>en</B541><B542>DEVICE FOR THE PRODUCTION OF Si NANOWIRES BY MEANS OF ELECTRODEPOSITION AT AMBIENT TEMPERATURE, METHOD FOR PREPARING SAME AND RESULTING NANOWIRES</B542><B541>fr</B541><B542>DISPOSITIF D'ÉLABORATION À TEMPÉRATURE AMBIANTE DE NANOFILS DE SI PAR ÉLECTRODÉPOSITION, PRCÉDÉ DE PRÉPARATION ET NANOFILS OBTENUS</B542></B540></B500><B700><B710><B711><snm>Universite De Reims Champagne Ardenne (U.R.C.A.)</snm><iid>101122929</iid><irf>urca/13/ep</irf><adr><str>Villa Douce 
9 boulevard de la Paix</str><city>51097 Reims Cedex</city><ctry>FR</ctry></adr></B711></B710><B720><B721><snm>MALLET, Jérémy</snm><adr><str>17 boulevard Saint-Marceaux</str><city>51100 Reims</city><ctry>FR</ctry></adr></B721><B721><snm>TROYON, Michel</snm><adr><str>9 rue des Tuileries</str><city>51390 Gueux</city><ctry>FR</ctry></adr></B721><B721><snm>MARTINEAU, Florie</snm><adr><str>76 rue du Mont d'Arène</str><city>51100 Reims</city><ctry>FR</ctry></adr></B721></B720><B740><B741><snm>Debay, Yves</snm><sfx>et al</sfx><iid>100779756</iid><adr><str>Cabinet Debay 
126, Elysee 2</str><city>F-78170 La Celle Saint Cloud</city><ctry>FR</ctry></adr></B741></B740></B700><B800><B840><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IS</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LT</ctry><ctry>LU</ctry><ctry>LV</ctry><ctry>MC</ctry><ctry>MK</ctry><ctry>MT</ctry><ctry>NL</ctry><ctry>NO</ctry><ctry>PL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>SM</ctry><ctry>TR</ctry></B840><B860><B861><dnum><anum>IB2009006466</anum></dnum><date>20090804</date></B861><B862>fr</B862></B860><B870><B871><dnum><pnum>WO2011027184</pnum></dnum><date>20110310</date><bnum>201110</bnum></B871></B870></B800></SDOBI></ep-patent-document>