SEMICONDUCTOR MEMORY WITH IMPROVED MEMORY BLOCK SWITCHING

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EP 2 465 116 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	23.07.2014 Bulletin 2014/30

(45)	Mention of the grant of the patent:
	26.03.2014 Bulletin 2014/13

(21)	Application number: 10744637.9

(22)	Date of filing: 06.08.2010

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International Patent Classification (IPC):

G11C 5/14^(2006.01)
G11C 13/00^(2006.01)
G11C 16/24^(2006.01)
G11C 17/18^(2006.01)

G11C 7/12^(2006.01)
G11C 16/02^(2006.01)
G11C 17/06^(2006.01)

(86)	International application number:
	PCT/US2010/044815

(87)	International publication number:
	WO 2011/019623 (17.02.2011 Gazette 2011/07)

(54)	SEMICONDUCTOR MEMORY WITH IMPROVED MEMORY BLOCK SWITCHING HALBLEITERSPEICHER MIT VERBESSERTER SPEICHERBLOCKUMSCHALTUNG MÉMOIRE À SEMI-CONDUCTEURS COMPORTANT UNE COMMUTATION AMÉLIORÉE DE BLOCS DE MÉMOIRE

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

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Priority:

10.08.2009 US 538492

(43)	Date of publication of application:
	20.06.2012 Bulletin 2012/25

(73)	Proprietor: SanDisk 3D LLC
	Milpitas, CA 95035 (US)

(72)	Inventors:
	YAN, Thomas Milpitas CA 95035 (US) FASOLI, Luca Milpitas CA 95035 (US) SCHEUERLEIN, Roy, E. Milpitas CA 95035 (US)

(74)	Representative: Tothill, John Paul
	Dehns St Bride's House 10 Salisbury Square London EC4Y 8JD London EC4Y 8JD (GB)

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References cited: :

US-A1- 2004 141 393
US-A1- 2008 159 032

US-A1- 2004 264 281
US-A1- 2009 116 271

BYUNG-DO YANG ET AL: "A low-power charge-recycling ROM architecture" IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US LNKD- DOI:10.1109/TVLSI.2003.816138, vol. 11, no. 4, 1 August 2003 (2003-08-01) , pages 590-600, XP011100556 ISSN: 1063-8210
BYUNG-DO YANG ET AL: "A low-power ROM using charge recycling and charge sharing techniques" IEEE JOURNAL OF SOLID-STATE CIRCUITS IEEE USA, vol. 38, no. 4, April 2003 (2003-04), pages 641-653, XP002606419 ISSN: 0018-9200 DOI: DOI:10.1109/JSSC.2003.809516

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).