(19)
(11) EP 2 472 521 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
22.08.2012 Bulletin 2012/34

(43) Date of publication:
04.07.2012 Bulletin 2012/27

(21) Application number: 11195649.6

(22) Date of filing: 23.12.2011
(51) International Patent Classification (IPC): 
G11C 11/16(2006.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30) Priority: 31.12.2010 US 201061429041 P
21.01.2011 US 201113011849

(71) Applicant: Grandis, Inc.
Milpitas CA 95035 (US)

(72) Inventors:
  • Apalkov, Dmytro
    San Jose, CA, 95111 (US)
  • Nikitin, Vladimir
    Campbell, CA, 95008 (US)
  • Tang, Xueti
    San Jose, CA, 95132 (US)

(74) Representative: Kuhnen & Wacker 
Patent- und Rechtsanwaltsbüro Prinz-Ludwig-Strasse 40A
85354 Freising
85354 Freising (DE)

   


(54) Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories


(57) A method and system for providing a magnetic junction usable (200) in a magnetic device are described. The magnetic junction includes a pinned layer (210), a nonmagnetic spacer layer (220), and a free layer (230). The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.