Method for direct deposition of a germanium layer

Description

Field of the Invention

[0001] The present invention is related to semiconductor processing, in particular to the deposition of Germanium layers by Chemical Vapour Deposition (CVD).

State of the art.

[0002] According to the present state of the art, the CVD-deposition of polycrystalline or amorphous Ge-layers on a SiO₂ layer using germane (GeH₄) as the Ge-precursor is not possible without the deposition of a silicon seed layer on the SiO₂ layer. Without the seed layer, no Ge-growth is possible due to the formation of germanium suboxides (by reaction between the Ge and oxide) which are volatile and therefore desorb at the growth temperature. On a substrate comprising areas of Si and areas of SiO₂, the Ge-growth is thus said to be selective, i.e. Ge is grown on the Si-areas but not on the SiO₂ areas.

[0003] The presence of a Si-seed layer is undesirable in some applications, but a method for growing a pure and continuous Ge layer directly on SiO₂ is not available at present.

[0004] Instead of GeH₄, higher order germanium precursors, in particular digermane (Ge₂H₆) and trigermane (Ge₃H₈) have been applied in combination with Si-precursors in the CVD-production of SiGe layers. Document US-A-2003111013 for example describes a process and apparatus which allows SiGe deposition on SiO₂ without a seed layer, and utilizing one of GeH₄, Ge₂H₆ Ge₃H₈ or tetracholrogermane (GeH_1-xCl_x, x = 1-4) as the Ge-precursor and one of silane (SiH₄), disilane (Si₂H₆) trisilane (Si₃H₈) or tetrachlorosilane (SiHCl₄) as the Si precursor. No indication is given as to the process parameters for producing a pure Ge layer without applying a seed layer.

[0005] It is concluded that the prior art lacks a method for depositing pure Ge layers on SiO₂. The present invention aims to provide such a method.

[0006] Document WO2007138063 is related to method wherein a layer of a Ge is deposited on a Ge-substrate in order to obtain an improved roughness of the Ge surface. The method involves a deposition technique suitable for or adapted for using nitrogen and/or at least one noble gas as carrier gas. The document does not however disclose required parameters for depositing a continuous Ge-layer directly on other surfaces

[0007] US2009/0140251 discloses a method to form a Ge layer on SiO2.

Summary of the invention

[0008] The invention is related to a method as disclosed in the appended claims. As such, the invention is related to a method for depositing a continuous germanium layer on a substrate surface, comprising the steps of :

• Providing a substrate,
• Introducing said substrate into a reaction chamber suitable for applying a layer onto said surface by chemical vapour deposition (CVD),
• Introducing in said chamber a gas mixture comprising a germanium precursor gas and a non-reactive carrier gas, said germanium precursor gas being a higher order germane precursor compared to GeH₄,
• Depositing by CVD a continuous germanium layer overlying and in contact with said substrate surface.

[0009] According to preferred embodiments, said germanium precursor is Ge₂H₆ or Ge₃H₈. Said gas mixture may be at atmospheric pressure.

[0010] According to the invention, , said deposition step is performed at a deposition temperature between about 275°C and about 500°C, and the partial pressure of the germanium precursor gas in said gas mixture is at least 20mTorr when the deposition temperature is between about 275°C and about 285°C, and at least 10mTorr when the deposition temperature is higher than about 285°C and up to about 500°C.

[0011] According to the invention, said substrate surface comprises at least a surface area consisting of a material of the group consisting of :

• high-K dielectric materials,
• Silicon oxide,
• Si-nitrides or carbides,
• metals or metal nitrides or metal carbides.

According to specific embodiments said substrate surface comprises at least a surface area consisting of titanium nitride and/or least a surface area consisting of SiO₂.

[0012] Said gas mixture may further comprise a gas containing a doping element. Said gas containing a doping element may be B₂H₆ or AsH₃ or PH₃. Said carrier gas may be H₂ or N₂.

Brief description of the figures

[0013] 

Figure 1 shows a schematic view of a reactor suitable for the method of the invention.

Figure 2 shows the Ge growth rate as a function of the partial pressure of Ge₂H₆ at several deposition temperatures.

Figures 3a and 3b are SEM pictures illustrating the fact that no continuous Ge layer can be deposited on TiN starting from GeH₄ as the precursor, with or without a Si seed layer.

Figure 4 demonstrates the formation of a continuous Ge layer directly on TiN, according to the method of the invention.

Detailed description of the invention

[0014] According to the method of the invention, a higher order Ge-precursor, preferably digermane or trigermane (Ge₂H₆ or Ge₃H₈) is used as the germanium precursor gas in a gas mixture, preferably a gas mixture at atmospheric pressure, comprising or consisting of the Ge precursor gas, possibly a gas comprising dopant elements, and a non-reactive carrier gas, for example N₂ or H₂. The dopant element could be boron added to the mixture as B₂H₆ in gaseous form. Also n-type doping elements could be added, for example by adding AsH₃ or PH₃ to the mixture. From this mixture, a (possibly doped) continuous Ge layer is deposited by CVD on a substrate surface, e.g. on SiO₂, without requiring a Si seed layer. The Ge layer can be amorphous, polycrystalline or monocrystalline, mainly depending on the type of substrate onto which the layer is deposited. By a continuous layer is meant a layer that does not show island formation. The deposition method as such is conducted according to known CVD procedures, and may be executed in known CVD installations.

[0015] The method of the invention is applicable on substrate surface according to claim 1. According to the preferred embodiments, a Ge layer is deposited on a material on which it is impossible to directly deposit a continuous Ge layer by CVD from a gaseous phase comprising GeH₄ as the Ge-precursor. The main example of such a material is silicon oxide, in particular SiO₂. Other surfaces on which the invention is particularly applicable are layer of the following materials :

• high-K dielectric materials, such as hafnium oxides, zirconium oxides, lanthanides oxides (lanthanum oxide, dysprosium oxide, gadolinium oxide, ytterbium oxide) and any combination thereof. These materials are likely to show the same type of problems as silicon oxide in terms of the direct deposition of Ge with GeH₄ as the precursor, i.e. the formation of volatile Ge suboxides which desorb at the growth temperature,
• Si-nitrides or carbides (SiN, SiC),
• metals or metal nitrides/carbides (e.g. Hf, Zr, Al, Ti, TiN, Ta, Zr, Ru, TaN, TaC).

[0016] Metal nitrides or carbides are likely to show problems when depositing Ge with GeH₄ as the precursor, even when a Si seed layer is deposited first. The inventors have established such problems in the case of a TiN surface (see further). Without wishing to be bound by theory, such problems are believed to be caused by the presence of metal contamination at the Si/Ge interface.

[0017] Hereafter test results are described which were obtained on a silicon wafer of 200mm in diameter having a surface comprising areas of Si and areas of SiO₂. The precursor used was Ge₂H₆ with H₂ as the carrier gas. These results are however applicable to other types of substrates, and other higher order Ge-precursors, such as Ge₃H₈, as well as other carrier gases (e.g. N₂).

[0018] The CVD deposition was done in a CVD reactor as schematically illustrated in figure 1 and not meant to limit the scope of the invention. The carrier gas and precursor gas are provided towards the inlet 1 of a reaction chamber 2, in which the substrate 3 is mounted. A heating system is provided to heat up the reactor and the substrate to a desired temperature. First the interior of the reaction chamber is heated to the deposition temperature, preferably while a flow of the carrier gas is already supplied to the chamber. Suitable valve means (not shown) are provided to control the flow of gases towards the chamber. When the deposition temperature is reached, the precursor gas is added, and the mixture of the precursor and the carrier gas is supplied to the chamber, resulting in the deposition of the Ge layer on the substrate 3. Gases exit from the chamber through the outlet 4. In the tests of which the results are described hereafter, a flow rate of 20 l/min of H₂ carrier gas was supplied. The flow rates of the carrier gas and the precursor gas in the separate supply sections 3 and 4 determine the partial pressure of the precursor gas in the mixture by the formula :

with : p_p the partial pressure of the precursor gas, FR_p the flow rate of the precursor gas (taking into account precursor dilution), ΣF is the sum of all the flows in the chamber (all precursor gases + carrier gas), p_m the total pressure in the reactor. Said total pressure may be atmospheric pressure or lower than atmospheric pressure. The application of the method at atmospheric pressure offers the advantage that higher partial pressures can be obtained for the same flow rates.

[0019] In figure 2, the growth rate of Ge on Si is shown as a function of the Ge₂H₆ partial pressure for different deposition temperatures. The line 10 represents the separation between test results showing selective growth, i.e. no nucleation on SiO₂ to the left of line 10, and test results showing non-selective growth, i.e. nucleation on SiO₂, to the right of line 10.

[0020] At temperatures lower than 275°C, Ge growth becomes so low as to be unworkable, on Si as well as on SiO₂. Above about 500°C, the growth was selective in every case, i.e. nucleation on Si but not on SiO₂. Between about 275°C and 500°C, non-selective Ge growth could be obtained depending on the partial pressure of Ge₂H₆. At the lower end of the temperature range of 275°C-500°C, a higher partial pressure is required (at least 20mTorr), while starting from about 285°C, the partial pressure must be at least 10mTorr. The maximum of the partial pressure is determined by practical circumstances (e.g. sufficient flow of carrier gas) and can differ as a function of the actual installation and materials used. These results prove that there is a window in terms of the deposition temperature, between about 275°C and about 500°C, within which a continuous layer of pure Ge can be deposited directly by CVD on SiO₂, provided that the partial pressure of the high order Ge precursor is sufficiently high. The invention is equally related to a semiconductor device comprising a substrate produced by the method of the invention.

[0021] The method of the invention is especially applicable to the deposition of a continuous Ge layer on titanium nitride (TiN). It was found by the inventors that on TiN it was not possible to deposit Ge by using germane (GeH₄) as the precursor, not even with the application of a Si seed layer. Tests were done wherein Ge was deposited by CVD on a Si substrate provided with a TiN layer of about 100nm thickness. In a first test, Ge was deposited directly on the TiN layer. In two further tests, Ge was deposited after deposition of a Si seed layer of about 40nm thickness and in another test after deposition of a Si seed layer of about 85nm in thickness. In each case, Ge growth occurred by formation of pillars or islands, not in a continuous layer. This is illustrated in figures 3a and 3b. Figure 3a shows the Si substrate 20, provided with TiN layer 21 and Ge layer 22 deposited from GeH₄ directly on the TiN. It is seen that the Ge layer is very irregular and not continuous. Figure 3b shows the effect of a Si seed layer 23 of 86nm. The Ge formation is still in the form pillars and islands 24. Without wishing to be bound by theory, it is believed that such problems are caused by metal contamination at the Si/Ge interface. Similar problems are expected for deposition on other types of metal, metal nitride or metal carbide surfaces.

[0022] In a comparative test, a Si substrate provided with a TiN layer of 98.2nm thick was subjected to the method of the invention, using Ge₂H₆ at 300°C, H₂ as carrier gas, the total pressure being atmospheric pressure and the partial pressure of Ge₂H₆ being 221mTorr, in the installation as schematically shown in figure 1. The result as illustrated by figure 4, was a continuous layer 25 of polycrystalline Ge, overlying and in contact with the TiN layer 21. The invention is thus also related to a semiconductor substrate comprising a TiN layer at least on a portion of the substrate surface, with a Ge layer overlying and in contact with said TiN layer. The invention is equally related to a semiconductor device comprising such a substrate.

Claims

1. A method for depositing a continuous germanium layer on a substrate surface, comprising the steps of :

• Providing a substrate (3),

• Introducing said substrate into a reaction chamber (2) suitable for applying a layer onto said surface by chemical vapour deposition (CVD),

• Introducing in said chamber a gas mixture comprising a germanium precursor gas and a non-reactive carrier gas, said germanium precursor gas being a higher order germane precursor compared to GeH₄,

• Depositing by CVD a continuous germanium layer overlying and in contact with said substrate surface,

wherein said substrate surface comprises at least a surface area consisting of a material of the group consisting of :

• high-K dielectric materials,

• Silicon oxide,

• Si-nitrides or carbides,

• metals or metal nitrides or metal carbides.

characterized in that said deposition step is performed at a deposition temperature between 275°C and 500°C, and wherein the partial pressure of the germanium precursor gas in said gas mixture is at least 20mTorr when the deposition temperature is between 275°C and 285°C, and at least 10mTorr when the deposition temperature is higher than 285°C and up to 500°C

2. Method according to claim 1, wherein said germanium precursor is Ge₂H₆ or Ge₃H₈.

3. Method according to claim 1 or 2, wherein said gas mixture is at atmospheric pressure.

4. Method according to claim any one of claims 1 to 3, wherein said substrate surface comprises at least a surface area consisting of titanium nitride.

5. Method according to any one of the preceding claims, wherein said substrate surface comprises at least a surface area consisting of SiO₂.

6. Method according to any one of the preceding claims, said gas mixture further comprising a gas containing a doping element.

7. Method according to claim 6, wherein said gas containing a doping element is B₂H₆ or AsH₃ or PH₃.

8. Method according to any one of the preceding claims, wherein said carrier gas is H₂ or N₂.

Ansprüche

1. Verfahren zum Abscheiden einer kontinuierlichen Germaniumschicht auf eine Substratoberfläche, die folgenden Schritte umfassend :

• Bereitstellen eines Substrats (3),

• Einführen des Substrats in eine Reaktionskammer (2), die zum Auftragen einer Schicht auf die Oberfläche durch chemische Dampfabscheidung (CVD) geeignet ist,

• Einführen in die Kammer eines Gasgemisches, das ein Germanium-Vorläufergas und ein nichtreaktives Trägergas umfasst, wobei das Germanium-Vorläufergas eine höhere Ordnung german-Vorläufer im Vergleich zu GeH₄ ist,

• Abscheiden einer kontinuierlichen Schicht durch CVD, die über der Substratoberfläche liegt und in Kontakt mit dieser ist,

wobei die Substratoberfläche mindestens einen Oberflächenbereich umfasst, der aus einem Material der Gruppe bestehend aus

• dielektrischen Materialien mit hohem k-Wert,

• Siliciumoxid,

• Si-Nitriden oder Carbiden,

• Metallen oder Metallnitriden oder Metallcarbiden besteht,

dadurch gekennzeichnet, dass der Abscheideschritt bei einer Abscheidetemperatur von 275 °C bis 500 °C ausgeführt wird, und wobei der Partialdruck des Germanium-Vorläufergases im Gasgemisch mindestens 20 mTorr beträgt wenn die Abscheidetemperatur zwischen 275 °C und 285 °C liegt, und mindestens 10 mTorr wenn die Abscheidetemperatur höher als 285 °C und bis zu 500 °C ist.

2. Verfahren nach Anspruch 1, wobei der Germanium-Vorläufer Ge₂H₆ oder Ge₃H₈ ist.

3. Verfahren nach Anspruch 1 oder 2, wobei das Gasgemisch einen atmosphärischen Druck aufweist.

4. Verfahren nach einem der Ansprüche 1 bis 3, wobei die Substratoberfläche mindestens einen Oberflächenbereich umfasst, der aus Titannitrid besteht.

5. Verfahren nach einem der vorhergehenden Ansprüche, wobei die Substratoberfläche mindestens einen Oberflächenbereich umfasst, der aus SiO₂ besteht.

6. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Gasgemisch ferner ein Gas umfasst, das ein Dotierungselement enthält.

7. Verfahren nach Anspruch 6, wobei das Gas, das ein Dotierungselement enthält, B₂H₆ oder AsH₃ oder PH₃ ist.

8. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Trägergas H₂ oder N₂ ist.

Revendications

1. Procédé de dépôt d'une couche continue de germanium sur une surface de substrat, comprenant les étapes de :

• fourniture d'un substrat (3),

• introduction dudit substrat dans une chambre de réaction (2) adaptée pour appliquer une couche sur ladite surface par dépôt chimique en phase vapeur (CVD),

• introduction dans ladite chambre d'un mélange de gaz comprenant un gaz précurseur de germanium et un gaz vecteur non réactif, ledit gaz précurseur de germanium étant un précurseur de germane d'ordre supérieur comparé à GeH₄,

• dépôt par CVD d'une couche continue de germanium recouvrant et étant en contact avec ladite surface de substrat,

dans lequel ladite surface de substrat comprend au moins une zone de surface constituée d'un matériau du groupe constitué de :

• matériaux diélectriques à K élevé,

• oxyde de silicium,

• nitrures ou carbures de Si,

• métaux ou nitrures de métal ou carbures de métal,

caractérisé en ce que ladite étape de dépôt est effectuée à une température de dépôt comprise entre 275 °C et 500 °C, et dans lequel la pression partielle du gaz précurseur de germanium dans ledit mélange de gaz est d'au moins 20 mTorr lorsque la température de dépôt est comprise entre 275 °C et 285 °C, et au moins 10 mTorr lorsque la température de dépôt est supérieure à 285 °C et jusqu'à 500 °C.

2. Procédé selon la revendication 1, dans lequel ledit précurseur de germanium est Ge₂H₆ ou Ge₃H₈.

3. Procédé selon la revendication 1 ou 2, dans lequel ledit mélange de gaz est à pression atmosphérique.

4. Procédé selon l'une quelconque des revendications 1 à 3, dans lequel ladite surface de substrat comprend au moins une zone de surface constituée de nitrure de titane.

5. Procédé selon l'une quelconque des revendications précédentes, dans lequel ladite surface de substrat comprend au moins une zone de surface constituée de SiO₂.

6. Procédé selon l'une quelconque des revendications précédentes, ledit mélange de gaz comprenant en outre un gaz contenant un élément dopant.

7. Procédé selon la revendication 6, dans lequel ledit gaz contenant un élément dopant est B₂H₆ ou ASH₃ ou PH₃.

8. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit gaz vecteur est H₂ ou N₂.

Drawing