(19)
(11) EP 2 492 379 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
24.10.2012 Bulletin 2012/43

(43) Date of publication:
29.08.2012 Bulletin 2012/35

(21) Application number: 10824951.7

(22) Date of filing: 20.10.2010
(51) International Patent Classification (IPC): 
C30B 29/28(2006.01)
G02B 27/28(2006.01)
(86) International application number:
PCT/JP2010/068422
(87) International publication number:
WO 2011/049102 (28.04.2011 Gazette 2011/17)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 21.10.2009 JP 2009242433

(71) Applicants:
  • Fujikura Ltd.
    Tokyo 135-8512 (JP)
  • National Institute for Materials Science
    Ibaraki 305-0047 (JP)

(72) Inventors:
  • SANADA Kazuo
    Tokyo 135-8512 (JP)
  • SHIMAMURA Kiyoshi
    Tsukuba-shi Ibaraki 305-0047 (JP)
  • GARCIA Villora Encarnacion Antonia
    Tsukuba-shi Ibaraki 305-0047 (JP)

(74) Representative: HOFFMANN EITLE 
Patent- und Rechtsanwälte Arabellastrasse 4
81925 München
81925 München (DE)

   


(54) SINGLE CRYSTAL, PROCESS FOR PRODUCING SAME, OPTICAL ISOLATOR, AND OPTICAL PROCESSOR USING SAME


(57) The present invention provides a single crystal for an optical isolator having a Faraday rotation angle exceeding that of TGG single crystal in a wavelength region of 1064 nm or longer or in a wavelength region of shorter than 1064 nm, and is capable of realizing enlargement of crystal size, a production process thereof, an optical isolator, and an optical processor that uses the optical isolator. The single crystal according to the present invention is composed of a terbium aluminum garnet single crystal, and mainly a portion of the aluminum is replaced with lutetium.