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(11)

EP 2 494 596 A1

(12)

(43) Date of publication: 05.09.2012 Bulletin 2012/36 (21) Application number: 10826530.7 (22) Date of filing: 07.10.2010

(51) International Patent Classification (IPC):  H01L 21/8234(2006.01) H01L 29/786(2006.01) H01L 27/088(2006.01) (86) International application number: PCT/JP2010/068103 (87) International publication number: WO 2011/052396 (05.05.2011 Gazette 2011/18)

(84) Designated Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR (30) Priority: 29.10.2009 JP 2009249330 22.01.2010 JP 2010012619 (71) Applicant: Semiconductor Energy Laboratory Co. Ltd. Atsugi-shi, Kanagawa 243-0036 (JP)	(72) Inventor: YAMAZAKI, Shunpei Atsugi-shi Kanagawa 243-0036 (JP) (74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser  Leopoldstrasse 4 80802 München 80802 München (DE)