Switching array having circuity to adjust a temporal distribution of a gating signal applied to the array

(19)

(11)

EP 2 518 745 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	24.04.2013 Bulletin 2013/17

(43)	Date of publication A2:
	31.10.2012 Bulletin 2012/44

(21)	Application number: 12165462.8

(22)	Date of filing: 25.04.2012

(51)

International Patent Classification (IPC):

H01H 1/00^(2006.01)

H01H 9/54^(2006.01)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
	Designated Extension States:
	BA ME

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Priority:

28.04.2011 US 201113096071

(71)	Applicant: General Electric Company
	Schenectady, NY 12345 (US)

(72)	Inventor:
	Aimi, Marco Francesco Niskayuna, NY New York 12309 (US)

(74)	Representative: Picker, Madeline Margaret
	GE International Inc. Global Patent Operation - Europe 15 John Adam Street London WC2N 6LU London WC2N 6LU (GB)

(54)	Switching array having circuity to adjust a temporal distribution of a gating signal applied to the array

(57) A Micro-electro-mechanical systems (MEMS) switching array (1000) includes circuitry (1008), which may be coupled to a gate line (1006) of the array to adjust a temporal distribution of a gating signal applied to a plurality of MEMS switches that make up the switching array. The temporal distribution may be shaped to reduce a voltage surge that can develop in the switches during switching of electrical current. This voltage surge reduction is conducive to improving the durability of the array.

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