(19)
(11) EP 2 548 238 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
17.06.2015 Bulletin 2015/25

(45) Mention of the grant of the patent:
22.04.2015 Bulletin 2015/17

(21) Application number: 11712085.7

(22) Date of filing: 14.03.2011
(51) International Patent Classification (IPC): 
H01L 45/00(2006.01)
 H01L 27/24(2006.01)
(86) International application number:
PCT/US2011/028396
(87) International publication number:
WO 2011/115926 (22.09.2011 Gazette 2011/38)

(54)

METHOD OF FORMING BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS

VERFAHREN ZUR HERSTELLUNG VON BODENELEKTRODEN ZUR VERWENDUNG MIT METALLOXIDWIDERSTANDSSCHALTSCHICHTEN

PROCÉDÉ DE FABRICATION D'ÉLECTRODES INFÉRIEURES POUR UNE UTILISATION AVEC DES COUCHES À COMMUTATION DE RÉSISTIVITÉ D'OXYDE MÉTALLIQUE

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 14.03.2011 US 201113047098
16.03.2010 US 314577 P

(43) Date of publication of application:
23.01.2013 Bulletin 2013/04

(73) Proprietor: SanDisk 3D, LLC
Milpitas, CA 95035 (US)

(72) Inventors:
  • SEKAR, Deepak, Chandra
    San Jose California 95118 (US)
  • KREUPL, Franz
    Mountain View California 94041 (US)
  • MAKALA, Raghuveer, S.
    Sunnyvale California 94086 (US)

(74) Representative: Tothill, John Paul 
Dehns St Bride's House 10 Salisbury Square
London EC4Y 8JD
London EC4Y 8JD (GB)


(56) References cited: : 
US-A1- 2006 250 837
US-A1- 2008 278 990
 US-A1- 2008 210 924
   
  • AN CHEN ET AL: "Non-volatile resistive switching for advanced memory applications", IEDM TECHNICAL DIGEST 2005, IEEE, PISCATAWAY, NJ, USA, 5 December 2005 (2005-12-05), pages 746-749, XP010903660, ISBN: 978-0-7803-9268-7
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).