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<ep-patent-document id="EP11187140B1" file="EP11187140NWB1.xml" lang="en" country="EP" doc-number="2587484" kind="B1" date-publ="20150318" status="n" dtd-version="ep-patent-document-v1-5">
<SDOBI lang="en"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................</B001EP><B005EP>J</B005EP><B007EP>JDIM360 Ver 1.28 (29 Oct 2014) -  2100000/0</B007EP></eptags></B000><B100><B110>2587484</B110><B120><B121>EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B1</B130><B140><date>20150318</date></B140><B190>EP</B190></B100><B200><B210>11187140.6</B210><B220><date>20111028</date></B220><B240><B241><date>20131104</date></B241><B242><date>20131216</date></B242></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B400><B405><date>20150318</date><bnum>201512</bnum></B405><B430><date>20130501</date><bnum>201318</bnum></B430><B450><date>20150318</date><bnum>201512</bnum></B450><B452EP><date>20141002</date></B452EP></B400><B500><B510EP><classification-ipcr sequence="1"><text>G11C   5/14        20060101AFI20120307BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  23/00        20060101ALI20120307BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>H03F   3/00        20060101ALI20120307BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>Integrierte Schaltung mit konfigurierbarer Ausgangszelle</B542><B541>en</B541><B542>Integrated circuit with configurable output cell</B542><B541>fr</B541><B542>Circuit intégré avec cellule de sortie configurable</B542></B540><B560><B561><text>EP-A2- 1 945 001</text></B561><B561><text>US-A1- 2011 211 717</text></B561><B561><text>US-B1- 6 252 422</text></B561><B561><text>US-B1- 6 346 846</text></B561><B561><text>US-B1- 6 630 724</text></B561></B560></B500><B700><B720><B721><snm>Jensen, Dan Christian Raun</snm><adr><str>Alrunevej 9</str><city>DK-2900 Hellerup</city><ctry>DK</ctry></adr></B721><B721><snm>Pedersen, Palle Hegne</snm><adr><str>Kristinelundsvej 37</str><city>DK-4200 Slagelse</city><ctry>DK</ctry></adr></B721></B720><B730><B731><snm>GN ReSound A/S</snm><iid>101274416</iid><irf>P81105320EP00</irf><adr><str>Lautrupbjerg 7</str><city>2750 Ballerup</city><ctry>DK</ctry></adr></B731></B730><B740><B741><snm>Zacco Denmark A/S</snm><iid>101463545</iid><adr><str>Arne Jacobsens Allé 15</str><city>2300 Copenhagen S</city><ctry>DK</ctry></adr></B741></B740></B700><B800><B840><ctry>AL</ctry><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IS</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LT</ctry><ctry>LU</ctry><ctry>LV</ctry><ctry>MC</ctry><ctry>MK</ctry><ctry>MT</ctry><ctry>NL</ctry><ctry>NO</ctry><ctry>PL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>RS</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>SM</ctry><ctry>TR</ctry></B840><B880><date>20130501</date><bnum>201318</bnum></B880></B800></SDOBI>
<description id="desc" lang="en"><!-- EPO <DP n="1"> -->
<heading id="h0001">TECHNICAL FIELD</heading>
<p id="p0001" num="0001">The present invention relates to an integrated circuit (IC) with a configurable output cell, in particular to an IC for a hearing device or adapted for a hearing device.</p>
<heading id="h0002">BACKGROUND</heading>
<p id="p0002" num="0002">Integrated circuits (ICs) or chips with embedded digital signal processors are widely used in the hearing aid industry to provide a compact and small hearing aid. The ICs used in hearing aids are small and the number of Input/Output ports or pads is limited. Typically, ICs are designed to interface specific components of the hearing aid.</p>
<p id="p0003" num="0003"><patcit id="pcit0001" dnum="US2011211717A"><text>US 2011/211717</text></patcit> discloses a power management system for a digital processing core of a battery-powered hearing aid. The power management system is adapted for providing power to the hearing aid circuit in a particularly efficient manner. The power management system comprises a first linear voltage regulator, and a second linear voltage regulator in series with a switched-capacitor 2:1 SC converter, a positive bulk biasing voltage supply, and a negative bulk biasing voltage supply, for controlling the switching speed, threshold voltage, and current leak from the semiconductor elements of the digital processing core when the core is operated at the reduced voltage provided by the power management system.</p>
<heading id="h0003">SUMMARY</heading>
<p id="p0004" num="0004">There is a need for increasing the design flexibility when designing and constructing hearing aids to be able to use different components or be able to use the same component in a number of different hearing device models. Further, there is a need for providing ICs with low power consumption due to the limited power supply capacity of a hearing device.</p>
<p id="p0005" num="0005">Accordingly, an integrated circuit (IC) for a hearing device as in claim 1 is provided, wherein the integrated circuit comprises a ground rail, a first power rail adapted to carry a first voltage, and a second power rail adapted to carry a second voltage, the integrated circuit comprising a number of pads for connecting the integrated circuit to other components, the number of pads including at least one output pad including a first output pad. The integrated circuit comprises at least one output cell including a first output cell having a ground pin connected to the ground rail, a first power supply pin connected to the first power rail, a second power supply pin connected to the second<!-- EPO <DP n="2"> --> power rail, a data pin, at least one voltage select pin and an output pin wired to the first output pad. The first output cell is adapted to operate according to a first mode wherein the voltage on the first output pin has a first amplitude, and according to a second mode wherein the voltage on the first output pin has a second amplitude larger than the first amplitude depending on a control signal applied to the at least one voltage select pin. The first output cell comprises at least three transistors including a first transistor, a second transistor, and a third transistor, each transistor having a first terminal, a second terminal, a third terminal and a fourth terminal. The first terminal of the first transistor is wired to the ground pin, the second terminal of the first transistor is connected to the data pin, optionally via a level shifter, the third terminal is wired to the output pin, and the fourth terminal is wired to the first terminal. The fourth terminal of the second and of the third transducer are wired to a common terminal.</p>
<p id="p0006" num="0006">Also disclosed is a method for manufacture of an integrated circuit as in claim 12. The method comprises providing at least one output cell having an output pin and at least two drive transistors each having a first terminal connected to a respective first and a second<!-- EPO <DP n="3"> --> power supply pin of the output cell, a second terminal, a third terminal connected to the output pin and a fourth terminal, wherein the fourth terminal of the two drive transistors are wired such that the voltage difference between the third and fourth terminal of the respective drive transistors is less than the diode threshold voltage between the third and fourth terminal. The method may comprise wiring the fourth terminals to the power supply pin adapted to carry the largest supply voltage, e.g. the second power supply pin.</p>
<p id="p0007" num="0007">It is an advantage of the present invention that the voltage amplitude of the first output pad may be easily adjusted by adjusting a register setting during configuration or even during use, thereby increasing the design flexibility for hearing aid constructors without increasing the number of pads on the IC, and at the same time maintaining a low power consumption by avoiding undesired current paths in the IC.</p>
<heading id="h0004">BRIEF DESCRIPTION OF THE DRAWINGS</heading>
<p id="p0008" num="0008">The above and other features and advantages of the present invention will become readily apparent to those skilled in the art by the following detailed description of exemplary embodiments thereof with reference to the attached drawings, in which:
<dl id="dl0001">
<dt>Fig. 1</dt><dd>schematically illustrates a hearing device,</dd>
<dt>Fig. 2</dt><dd>schematically illustrates an exemplary integrated circuit, and</dd>
<dt>Fig. 3</dt><dd>schematically illustrates an exemplary output cell.</dd>
</dl></p>
<heading id="h0005">DETAILED DESCRIPTION</heading>
<p id="p0009" num="0009">The figures are schematic and simplified for clarity, and they merely show details which are essential to the understanding of the invention, while other details have been left out. Throughout, the same reference numerals are used for identical or corresponding parts.</p>
<p id="p0010" num="0010">The at least one output cell, e.g. the first output cell, may be configured to form a part of or be embedded in an input/output (IO) cell if bidirectional communication is desired.</p>
<p id="p0011" num="0011">The integrated circuit optionally comprises a processing core e.g. for digital signal processing of digital audio signal in order to compensate for hearing impairment of a user. The processing core is connected to a number of communication cells or peripheral units for communication with other units or components, e.g. an AD converter unit, user interface, memory unit and/or radio unit of a hearing device. Accordingly, the IC comprises at least one communication cell, including at least a first<!-- EPO <DP n="4"> --> communication cell embedding one or more output cells as described herein. The IC may comprise a second and/or a third communication cell.</p>
<p id="p0012" num="0012">A communication cell may be adapted to communicate according to one or more standard protocols. Exemplary protocols may include but are not limited to Serial Peripheral Interface Bus (SPI), Inter-Integrated Circuit (IIC or I2C) with master and/or slave, Integrated Interchip Sound (IIS, I2S), and protocols for wireless communication, etc.</p>
<p id="p0013" num="0013">A communication cell or unit may comprise one or more output cells, e.g. a first output cell and/or a second output cell, depending on the functionality of the communication cell. A communication cell may comprise one or more input cells. A communication cell may comprise one or more input/output (IO) cells, i.e. cells that are adapted for bidirectional communication.</p>
<p id="p0014" num="0014">The integrated circuit comprises a number of pads for connecting the IC or communication cells of the IC to other components such as memory units, radio units, user interfaces, power supplies such as a battery or others. The number of pads includes a first pad for connection to ground or other reference voltage, a second pad for connection to a power supply, such as a battery, and a number of communication pads including a first communication pad adapted for operating as an output pad for connecting the IC to other components.</p>
<p id="p0015" num="0015">The first power rail may be adapted to carry a first voltage V<sub>1</sub>, such as V<sub>battery</sub>, and the second power rail may be adapted to carry a second voltage V<sub>2</sub>. The second voltage V<sub>2</sub> may be larger than the first voltage V<sub>1</sub>. In one or more embodiments, V<sub>2</sub> = 2*V<sub>battery</sub>.</p>
<p id="p0016" num="0016">An output cell, e.g. a first output cell and/or a second output cell, may comprise a first transistor, a second transistor and a third transistor, where each transistor has a first terminal, a second terminal, a third terminal, and a fourth terminal.</p>
<p id="p0017" num="0017">The first transistor may be an N-MOS transistor where the first terminal is the source, the second terminal is the gate, the third terminal is the drain and the fourth terminal is the body. The first transistor may be configured to pull the voltage on the output pin towards ground or other reference voltage applied to the ground rail. Accordingly, the first transistor may be denoted a ground transistor.</p>
<p id="p0018" num="0018">The second, third and/or a fourth transistor may be P-MOS transistors where the first terminal is the source, the second terminal is the gate, the third terminal is the drain and the fourth terminal is the body. The second, third and/or a fourth transistor may be<!-- EPO <DP n="5"> --> configured to pull or drive the voltage on the output pin towards the voltage applied to the respective power supply pins via power rails available in the IC. Accordingly, the second, third and/or fourth transistors may be denoted drive transistors. The IC may comprise a plurality of drive transistors, each connected between the output pin and a respective power supply pin. The fourth terminal of at least two drive transistors may be connected to a common terminal with a voltage level equal to or larger than the voltage level on the third terminals of the at least two drive transistors.</p>
<p id="p0019" num="0019">In one or more output cells, the first terminal of the first transistor may be wired to the ground pin and the third terminal of the first transistor may be wired to the output pin. The fourth terminal of the first transistor may be wired to the first terminal.</p>
<p id="p0020" num="0020">The second terminal of the first transistor may be wired to the data pin or connected to the ouput of a first level shifter adapting a data signal on the data pin to correct signal amplitudes.</p>
<p id="p0021" num="0021">In one or more output cells, the first terminal of the second transistor may be wired to the first power supply pin and the third terminal of the second transistor may be wired to the output pin.</p>
<p id="p0022" num="0022">In one or more output cells, the first terminal of the third transistor may be wired to the second power supply pin and the third terminal of the third transistor may be wired to the output pin.</p>
<p id="p0023" num="0023">In one or more output cells, the fourth terminals of the drive transistors may be wired such that a voltage difference V<sub>dif</sub> = V<sub>third terminal</sub> - V<sub>fourth terminal</sub> between the third terminals and the fourth terminals of the respective drive transistors is less than the diode threshold voltage V<sub>thres</sub> for the parasitic diode between the third and fourth terminal. The voltage difference V<sub>dif</sub> may be less than 0.4 V. For one or more drive transistors, the voltage difference V<sub>dif</sub> may be less than 0.4 V, such as less than 0.3 V, less than 0.2 V. In one or more embodiments, the voltage difference V<sub>dif</sub> may be less than or equal to 0 V. In an embodiment, where the fourth terminals are wired to the largest power supply voltage, it is ensured that V<sub>dif</sub> is less than or equal to 0V irrespective of the mode of operation.</p>
<p id="p0024" num="0024">In one or more output cells, e.g. the first output cell, the fourth terminal of the second transistor and the fourth terminal of the third transistor may be wired to the power supply pin carrying the largest voltage. The fourth terminal of the second transistor and the fourth terminal of the third transistor may be wired to a common terminal. The first<!-- EPO <DP n="6"> --> terminal of the third transistor may be the common terminal. Thereby undesired leakage currents may be avoided when the output cells operate in the mode with the smallest voltage amplitude on the output pin.</p>
<p id="p0025" num="0025">The second terminals of the second transistor and the third transistor may be connected to the output of a logical circuit of the first output cell for selecting between a first mode (second transistor active) and a second mode (third transistor active) of operation.</p>
<p id="p0026" num="0026">One or more output cells of the integrated circuit may thus be adapted to be able to operate in a first mode wherein the voltage signal on the output pin switches between V<sub>GND</sub><sup>*</sup> and V<sub>1</sub><sup>*</sup>, and in a second mode wherein the voltage signal on the output pin switches between V<sub>GND</sub>* and V<sub>2</sub><sup>*</sup>, depending on a control signal applied to the at least one voltage select pin.</p>
<p id="p0027" num="0027">The integrated circuit may comprise a third power rail adapted to carry a third voltage V<sub>3</sub>, and the first output cell may comprises a fourth transistor connected between the output pin and a third power supply pin connected to the third power rail.</p>
<p id="p0028" num="0028">The fourth transistor has a first terminal, a second terminal, a third terminal and a fourth terminal. The fourth terminal may be wired to the common terminal. The first output cell may be adapted to operate according to a third mode wherein the voltage on the first output pin has a third amplitude depending on a control signal applied to the at least one voltage select pin. The first terminal of the fourth transistor may be wired to the third power supply pin, and the third terminal of the fourth transistor may be wired to the output pin. The second terminal of the fourth transistor may be wired to a logical circuit to enable activation of the fourth transistor in a third mode of operation, wherein the voltage signal on the output pin switches between V<sub>GND</sub>* and V<sub>3</sub>*, depending on a control signal applied to the at least one voltage select pin.</p>
<p id="p0029" num="0029">One or more output cells of the integrated circuit may comprise a logical circuit having input connected to the at least one voltage select pin and the data pin, and output connected to the second terminals of the drive transistors (second, third and fourth transistor if present) for selecting between the modes by selectively activating the second, third and fourth transistor.</p>
<p id="p0030" num="0030">The integrated circuit may comprise at least one level shifter including a first level shifter between the data pin and the second terminals of the first, second and third transistor for adapting a data signal to correct signal amplitudes. The first level shifter<!-- EPO <DP n="7"> --> may be arranged between the data pin and the logical circuit and/or between the logical circuit and the second terminals of the drive transistors.</p>
<p id="p0031" num="0031">The at least one level shifter may include a second level shifter between the at least one voltage select pin and the logical circuit for adapting a voltage select signal to correct signal amplitudes for the logical circuit.</p>
<p id="p0032" num="0032">The integrated circuit may comprise a core connected to the first output cell, wherein the core is adapted to perform signal processing for a hearing device.</p>
<p id="p0033" num="0033"><figref idref="f0001">Fig. 1</figref> shows a hearing device 2. The hearing device 2 comprises an audio input interface 4 for receiving audio signal(s) in electronic and/or acoustic form. The audio input interface 4 may comprise one or more microphones, e.g. a first microphone and/or a second microphone, and/or a telecoil. The audio input interface 4 may comprise an audio connector or audio input boot for coupling external audiosources to the hearing device 2. The audio input interface 4 is connected to an AD converter unit 6 which is connected to a signal processing unit or integrated circuit 8. The AD converter unit 6 converts or transforms audio signals from the audio input interface 4 and send the digital audio signal(s) to the signal processing unit 8 for processing, e.g. in order to compensate for hearing loss or other hearing impairment. The signal processing unit 8 may send control signals to the AD converter unit 6 to configure and control operation of the AD converter unit 6. The signal processing unit 8 may be connected to a user interface 10 in order to allow a user, a computer or another hearing device to communicate with the hearing device, e.g. during configuration and/or during use of the hearing aid. The user interface 10 may comprise a push button and/or a connector for a data cable in order to couple the hearing device to e.g. a computer during configuration or another hearing device. The hearing device 2 may comprise a memory unit 12 connected to the signal processing unit 8 for storing data or hearing aid parameters, and the hearing device 2 may optionally comprise a radio unit 14 connected to the signal processing unit 8 and adapted for receiving and/or transmitting radio signals, e.g. in order to enable the hearing device 2 to communicate wirelessly with another device, such as a hearing device and/or a wireless interface. The AD converter unit 6 may be embedded in the signal processing unit or integrated circuit 8. The hearing device 2 may comprise a receiver or loudspeaker 16 connected to the signal processing unit 8 for emitting audio signals to a user.</p>
<p id="p0034" num="0034"><figref idref="f0001">Fig. 2</figref> shows an exemplary signal processing unit or integrated circuit 8 according to the present invention. The integrated circuit 8 comprises a processing core 18 e.g. for<!-- EPO <DP n="8"> --> digital signal processing of digital audio signals from an AD converter 6. The processing core 18 is connected to a number of communication cells or peripheral units for communication with other units of the hearing device, e.g. the AD converter unit 6, user interface 10, memory unit 12 and/or radio unit 14.</p>
<p id="p0035" num="0035">The integrated circuit 8 comprises a number of communication cells 20, 28, 30, 32, 34, 36, 38 forming interfaces to the processing core 18. A communication cell may be configured to implement different communication protocols depending on the unit to be connected thereto. A first and/or second output cell or IO cell may be implemented in each or one or more of the communication cells 20, 28, 30, 32, 34, 36, 38. Further, the integrated circuit may comprise a clock management cell 22 optionally comprising one or more output cells or IO cells as described herein.</p>
<p id="p0036" num="0036"><figref idref="f0002">Fig. 3</figref> illustrates an exemplary output cell according to the invention, e.g. a first and/or a second output cell which for example may be implemented in one or more of the communication cells of the integrated circuit in <figref idref="f0001">Fig. 2</figref>. The output cell 106 has a ground pin 108 connected to a ground rail 50 of the integrated circuit, a first power supply pin 110 connected to a first power rail 52 of the integrated circuit adapted to carry a first voltage V<sub>1</sub>, a second power supply pin 112 connected to a second power rail 54 of the integrated circuit adapted to carry a second voltage V<sub>2</sub>, a data pin 114, at least one voltage select pin 116 and an output pin 118 wired to the first output pad 104. The output cell 106 further comprises a core power supply pin 120 connected to the core power rail 56. The first output pad 104 may be embedded in the output cell 106 as illustrated or be arranged outside the output cell in the integrated circuit.</p>
<p id="p0037" num="0037">The output cell 106, i.e. the first output cell, is adapted to operate according to a first mode wherein the voltage on the output pin 118 has a first amplitude V<sub>1</sub><sup>*</sup>, and according to a second mode wherein the voltage on the first output pin has a second amplitude V<sub>2</sub>*, larger than the first amplitude depending on a control signal applied to the at least one voltage select pin 116. The output cell 106 comprises a first transistor 122, a second transistor 124 and a third transistor 126 having respective first terminals 128A, 128B, 128C, second terminals 130A, 130B, 130C, third terminals 132A, 132B, 132C, and fourth terminals 134A, 134B, 134C. A logical circuit 136 is arranged between the at least one voltage select pin 116 and the second terminals 130B and 130C to selectively activate the second transistor and the third transistor depending on desired mode of operation. The output cell comprises a first level shifter 138 coupled between the data pin 114 and the second terminals 130B and 130C to adjust data<!-- EPO <DP n="9"> --> signal level. Further, a second level shifter 140 is coupled between the at least one voltage select pin 116 and the second terminals 130B and 130C to adjust voltage select signal level. The level shifters 138, 140 are connected to the second power power supply pin 112 and the core power supply pin 120. The at least one voltage select pin 116 may comprise a first voltage select pin and a second voltage select pin in order to select between more than two different operating modes of the output cell. Each transistor has an intrinsic parasitic diode between the third terminal and the fourth terminal which is also illustrated in <figref idref="f0002">Fig. 3</figref>. The coupling of fourth terminals eliminate or reduce parasitic currents between fourth and third terminals of the drive transistors.<!-- EPO <DP n="10"> --></p>
<heading id="h0006">LIST OF REFERENCES</heading>
<p id="p0038" num="0038">
<dl id="dl0002" compact="compact">
<dt>2</dt><dd>hearing device</dd>
<dt>4</dt><dd>audio input interface</dd>
<dt>6</dt><dd>analog-digital (AD) converter unit</dd>
<dt>8</dt><dd>signal processing unit</dd>
<dt>10</dt><dd>user interface</dd>
<dt>12</dt><dd>memory unit</dd>
<dt>14</dt><dd>radio unit</dd>
<dt>16</dt><dd>loudspeaker/receiver</dd>
<dt>18</dt><dd>core</dd>
<dt>20</dt><dd>communication cell (Master interface)</dd>
<dt>22</dt><dd>clock management unit</dd>
<dt>24</dt><dd>audio input/output</dd>
<dt>26</dt><dd>H-bridge</dd>
<dt>28</dt><dd>communication cell (Wireless controller)</dd>
<dt>30</dt><dd>communication cell (IIC Master)</dd>
<dt>32</dt><dd>communication cell (IIS interface)</dd>
<dt>34</dt><dd>communication cell (SPI Master)</dd>
<dt>36</dt><dd>communication cell (Com interface)</dd>
<dt>38</dt><dd>communication cell (IIC slave)</dd>
<dt>50</dt><dd>ground rail</dd>
<dt>52</dt><dd>first power rail</dd>
<dt>54</dt><dd>second power rail</dd>
<dt>56</dt><dd>core power rail</dd>
<dt>104</dt><dd>first output pad</dd>
<dt>106</dt><dd>output cell</dd>
<dt>108</dt><dd>ground pin<!-- EPO <DP n="11"> --></dd>
<dt>110</dt><dd>first power supply pin</dd>
<dt>112</dt><dd>second power supply pin</dd>
<dt>114</dt><dd>data pin</dd>
<dt>116</dt><dd>voltage select pin(s)</dd>
<dt>118</dt><dd>output pin or output node</dd>
<dt>120</dt><dd>core power supply pin</dd>
<dt>122</dt><dd>first transistor</dd>
<dt>124</dt><dd>second transistor</dd>
<dt>126</dt><dd>third transistor</dd>
<dt>128A, 128B, 128C</dt><dd>first terminal</dd>
<dt>130A, 130B, 130C</dt><dd>second terminal</dd>
<dt>132A, 132B, 132C</dt><dd>third terminal</dd>
<dt>134A, 134B, 134C</dt><dd>fourth terminal</dd>
<dt>136</dt><dd>logical circuit</dd>
<dt>138</dt><dd>first level shifter</dd>
<dt>140</dt><dd>second level shifter</dd>
</dl></p>
</description>
<claims id="claims01" lang="en"><!-- EPO <DP n="12"> -->
<claim id="c-en-01-0001" num="0001">
<claim-text>An integrated circuit for a hearing device, wherein the integrated circuit comprises a ground rail (50), a first power rail (52) adapted to carry a first voltage (V<sub>1</sub>), and a second power rail (54) adapted to carry a second voltage (V<sub>2</sub>), the integrated circuit comprising a number of pads for connecting the integrated circuit to other components, the number of pads including at least one output pad including a first output pad (104), wherein the integrated circuit comprises at least one output cell including a first output cell (106) having a ground pin (108) connected to the ground rail (50), a first power supply pin (110) connected to the first power rail (52), a second power supply pin (112) connected to the second power rail (54), a data pin (114), at least one voltage select pin (116) and an output pin (118) wired to the first output pad, wherein the first output cell comprises at least three transistors including a first transistor (122), a second transistor (124), and a third transistor (126), each transistor having a first terminal, a second terminal, a third terminal and a fourth terminal, and wherein the first terminal (128A) of the first transistor is wired to the ground pin (108), the second terminal (130A) of the first transistor is connected to the data pin (114), optionally via a level shifter, the third terminal (132A) is wired to the output pin, and the fourth terminal (134A) is wired to the first terminal, wherein the first output cell is adapted to operate according to a first mode wherein the voltage on the output pin (118) has a first amplitude, and according to a second mode wherein the voltage on the output pin (118) has a second amplitude larger than the first amplitude depending on a control signal applied to the at least one voltage select pin, and wherein the fourth terminal of the second transistor and the fourth terminal of the third transistor are wired to a common terminal.</claim-text></claim>
<claim id="c-en-01-0002" num="0002">
<claim-text>An integrated circuit according to claim 1, wherein the fourth terminal (134B) of the second transistor and the fourth terminal (134C) of the third transistor is wired to the power supply pin carrying the largest voltage.</claim-text></claim>
<claim id="c-en-01-0003" num="0003">
<claim-text>An integrated circuit according to any of claims 1-2, wherein the first terminal (128C) of the third transistor is wired to the second power supply pin and wherein the first terminal (128C) of the third transistor is the common terminal.</claim-text></claim>
<claim id="c-en-01-0004" num="0004">
<claim-text>An integrated circuit according to any of claims 1-3, wherein the first terminal (128B) of the second transistor is wired to the first power supply pin.<!-- EPO <DP n="13"> --></claim-text></claim>
<claim id="c-en-01-0005" num="0005">
<claim-text>An integrated circuit according to any of claims 1-4, wherein the third terminal (132B, 132C) of the second transistor and the third transistor are wired to the output pin (118).</claim-text></claim>
<claim id="c-en-01-0006" num="0006">
<claim-text>An integrated circuit according to any of the claims 1-5, wherein the integrated circuit comprises a third power rail adapted to carry a third voltage (V<sub>3</sub>), and wherein the first output cell comprises a fourth transistor connected between the output pin and a third power supply pin, the third power supply pin being connected to the third power rail.</claim-text></claim>
<claim id="c-en-01-0007" num="0007">
<claim-text>An integrated circuit according to claim 6, wherein the fourth transistor has a first terminal, a second terminal, a third terminal and a fourth terminal, wherein the fourth terminal is wired to the common terminal, and wherein the first output cell is adapted to operate according to a third mode wherein the voltage on the first output pin has a third amplitude depending on a control signal applied to the at least one voltage select pin.</claim-text></claim>
<claim id="c-en-01-0008" num="0008">
<claim-text>An integrated circuit according to claim 7, wherein the first terminal of the fourth transistor is wired to the third power supply pin and the third terminal of the fourth transistor is wired to the output pin.</claim-text></claim>
<claim id="c-en-01-0009" num="0009">
<claim-text>An integrated circuit according to any of the claims 1-8, wherein the first output cell comprises a logical circuit having input connected to the at least one voltage select pin and the data pin, and output connected to the second terminals of the second, third and fourth transistor if present, for selecting between the modes by selectively activating the second, third and fourth transistor, respectively.</claim-text></claim>
<claim id="c-en-01-0010" num="0010">
<claim-text>An integrated circuit according to any of the preceding claims, wherein the integrated circuit comprises a core (18) connected to the first output cell, wherein the core is adapted to perform signal processing for a hearing device.</claim-text></claim>
<claim id="c-en-01-0011" num="0011">
<claim-text>A hearing device comprising an integrated circuit according to any of the preceding claims.</claim-text></claim>
<claim id="c-en-01-0012" num="0012">
<claim-text>A method for manufacture of an integrated circuit, comprising
<claim-text>- providing at least one output cell having an output pin and at least two drive transistors each having a first terminal connected to a respective first and a second power supply pin of the output cell, a second terminal, a third terminal connected to the output pin and a fourth terminal, wherein the fourth terminal of the two drive transistors are wired such that the voltage difference between the third and fourth terminal of the respective drive transistors is<!-- EPO <DP n="14"> --> less than the diode threshold voltage between the third and fourth terminal, and wherein the fourth terminals of the at least two drive transistors are wired to a common terminal.</claim-text></claim-text></claim>
</claims>
<claims id="claims02" lang="de"><!-- EPO <DP n="15"> -->
<claim id="c-de-01-0001" num="0001">
<claim-text>Integrierte Schaltung für ein Hörgerät, wobei die integrierte Schaltung eine Erdungsschiene (50), eine erste zum Führen einer ersten Spannung (V<sub>1</sub>) eingerichtete Stromschiene (52) und eine zweite zum Führen einer zweiten Spannung (V<sub>2</sub>) eingerichtete Stromschiene (54) umfasst, wobei die integrierte Schaltung eine Anzahl von Pads zum Verbinden der integrierten Schaltung mit anderen Komponenten umfasst, wobei die Anzahl von Pads mindestens ein Ausgangs-Pad mit einem ersten Ausgangs-Pad (104) umfasst, wobei die integrierte Schaltung zumindest eine Ausgangszelle umfasst, aufweisend eine erste Ausgangszelle (106) mit einem mit der Erdungsschiene (50) verbundenen Erdungspin (108), einem ersten mit der ersten Stromschiene (52) verbundenen Stromversorgungspin (110), einem zweiten mit der zweiten Stromschiene (54) verbundenen Stromversorgungspin (112), einem Datenpin (114), zumindest einem Spannungsauswahlpin (116) und einem Ausgangspin (118), verdrahtet mit dem ersten Ausgangs-Pad, wobei die erste Ausgangszelle mindestens drei Transistoren, einschließlich eines ersten Transistors (122), eines zweiten Transistors (124) und eines dritten Transistors (126) umfasst, wobei jeder Transistor einen ersten Endpunkt, einen zweiten Endpunkt, einen dritten Endpunkt und einen vierten Endpunkt aufweist, und wobei der erste Endpunkt (128A) des ersten Transistors mit dem Erdungspin (108) verdrahtet ist, der zweite Endpunkt (130A) des ersten Transistors mit dem Datenpin (114) verbunden ist, eventuell durch einen Niveauschalter, der dritte Endpunkt (132A) mit dem Ausgangspin verdrahtet ist, und der vierte Endpunkt (134A) mit dem ersten Endpunkt verdrahtet ist, wobei die erste Ausgangszelle dafür eingerichtet ist, gemäß einem ersten Modus, wo die Spannung auf dem Ausgangspin (118) eine erste Amplitude aufweist, und gemäß einem zweiten Modus, wo die Spannung auf dem Ausgangspin (118) eine zweite Amplitude aufweist, die abhängig von einem auf dem zumindest einen Spannungsauswahlpin angelegten Steuersignal größer als die erste Amplitude ist, zu wirken, und wobei der vierte Endpunkt des zweiten Transistors und der vierte Endpunkt des dritten Transistors mit einem gemeinsamen Endpunkt verdrahtet sind.</claim-text></claim>
<claim id="c-de-01-0002" num="0002">
<claim-text>Integrierte Schaltung nach Anspruch 1, wobei der vierte Endpunkt (134B) des zweiten Transistors und der vierte Endpunkt (134C) des dritten Transistors<!-- EPO <DP n="16"> --> mit dem die größte Spannung führenden Stromversorgungspin verdrahtet sind.</claim-text></claim>
<claim id="c-de-01-0003" num="0003">
<claim-text>Integrierte Schaltung nach einem der Ansprüche 1-2, wobei der erste Endpunkt (128C) des dritten Transistors mit dem zweiten Stromversorgungspin verdrahtet ist, und wobei der erste Endpunkt (128C) des dritten Transistors der gemeinsame Endpunkt ist.</claim-text></claim>
<claim id="c-de-01-0004" num="0004">
<claim-text>Integrierte Schaltung nach einem der Ansprüche 1-3, wobei der erste Endpunkt (128B) des zweiten Transistors mit dem ersten Stromversorgungspin verdrahtet ist.</claim-text></claim>
<claim id="c-de-01-0005" num="0005">
<claim-text>Integrierte Schaltung nach einem der Ansprüche 1-4, wobei der dritte Endpunkt (132B, 132C) des zweiten Transistors und des dritten Transistors mit dem Ausgangspin (118) verdrahtet sind.</claim-text></claim>
<claim id="c-de-01-0006" num="0006">
<claim-text>Integrierte Schaltung nach einem der Ansprüche 1-5, wobei die integrierte Schaltung eine dritte zum Führen einer dritten Spannung (V<sub>3</sub>) eingerichtete Stromschiene umfasst, und wobei die erste Ausgangszelle einen vierten Transistor umfasst, der zwischen dem Ausgangspin und einem dritten Stromversorgungspin angeschlossen ist, wobei der dritte Stromversorgungspin mit der dritten Stromschiene verbunden ist.</claim-text></claim>
<claim id="c-de-01-0007" num="0007">
<claim-text>Integrierte Schaltung nach Anspruch 6, wobei der vierte Transistor einen ersten Endpunkt, einen zweiten Endpunkt, einen dritten Endpunkt und einen vierten Endpunkt aufweist, wobei der vierte Endpunkt mit dem gemeinsamen Endpunkt verdrahtet ist, und wobei die erste Ausgangszelle dafür eingerichtet ist, gemäß einem dritten Modus zu wirken, wo die Spannung auf dem ersten Ausgangspin eine dritte Amplitude aufweist, abhängig von einem auf dem zumindest einen Spannungsauswahlpin angelegten Steuersignal.</claim-text></claim>
<claim id="c-de-01-0008" num="0008">
<claim-text>Integrierte Schaltung nach Anspruch 7, wobei der erste Endpunkt des vierten Transistors mit dem dritten Stromversorgungspin verdrahtet ist, und der dritte Endpunkt des vierten Transistors mit dem Ausgangspin verdrahtet ist.<!-- EPO <DP n="17"> --></claim-text></claim>
<claim id="c-de-01-0009" num="0009">
<claim-text>Integrierte Schaltung nach einem der Ansprüche 1-8, wobei die erste Ausgangszelle eine logische Schaltung umfasst, wobei ein Eingang mit dem zumindest einen Spannungsauswahlpin und dem Datenpin verbunden ist, und ein Ausgang mit dem zweiten Endpunkt des zweiten, dritten und vierten Transistors, falls vorhanden, verbunden ist, zum Auswählen zwischen den Modi durch selektives Aktivieren des jeweils zweiten, dritten und vierten Transistors.</claim-text></claim>
<claim id="c-de-01-0010" num="0010">
<claim-text>Integrierte Schaltung nach einem der vorgehenden Ansprüche, wobei die integrierte Schaltung einen Kern (18) umfasst, welcher mit der ersten Ausgangszelle verbunden ist, wobei der Kern dafür eingerichtet ist, eine Signalbehandlung für ein Hörgerät auszuführen.</claim-text></claim>
<claim id="c-de-01-0011" num="0011">
<claim-text>Hörgerät umfassend eine integrierte Schaltung nach einem der vorgehenden Ansprüche.</claim-text></claim>
<claim id="c-de-01-0012" num="0012">
<claim-text>Verfahren zur Herstellung einer integrierten Schaltung, umfassend
<claim-text>- Bereitstellen von mindestens einer Ausgangszelle mit einem Ausgangspin und mindestens zwei Antriebstransistoren, die jeweils einen ersten Endpunkt, der mit einem jeweiligen ersten und zweiten Stromversorgungspin der Ausgangszelle verbunden ist, einen zweiten Endpunkt, einen dritten Endpunkt, der mit dem Ausgangspin verbunden ist, und einen vierten Endpunkt aufweisen, wobei der vierte Endpunkt der zwei Antriebstransistoren so verdrahtet sind, dass der Spannungsunterschied zwischen dem dritten und vierten Endpunkt der jeweiligen Antriebstransistoren kleiner als die Diodenschwellenspannung zwischen dem dritten und vierten Endpunkt ist, und wobei der vierte Endpunkt der mindestens zwei Antriebstransistoren mit einem gemeinsamen Endpunkt verdrahtet sind.</claim-text></claim-text></claim>
</claims>
<claims id="claims03" lang="fr"><!-- EPO <DP n="18"> -->
<claim id="c-fr-01-0001" num="0001">
<claim-text>Circuit intégré pour un dispositif de correction auditive, dans lequel le circuit intégré comprend un rail de terre (50), un premier rail d'alimentation (52) adapté pour porter une première tension (V<sub>1</sub>), et un deuxième rail d'alimentation (54) adapté pour porter une deuxième tension (V<sub>2</sub>), le circuit intégré comprenant un certain nombre de plaquettes de raccordement du circuit intégré à d'autres composantes, le nombre de plaquettes comprenant au moins une plaquette de sortie comprenant une première plaquette de sortie (104), le circuit intégré comprenant au moins une cellule de sortie comprenant une première cellule de sortie (106) ayant une broche de terre (108) reliée au rail de terre (50), une première broche d'alimentation de puissance (110) connectée au premier rail d'alimentation (52), une deuxième broche d'alimentation de puissance (112) connectée au deuxième rail d'alimentation (54), une broche de données (114), au moins une broche pour sélection de tension (116) et une broche de sortie (118) câblée à la première plaquette de sortie, la première cellule de sortie comprenant trois transistors comprenant un premier transistor (122), un deuxième transistor (124) et un troisième transistor (126), chaque transistor ayant une première borne, une deuxième borne, une troisième borne et une quatrième borne, et la première borne (128A) du premier transistor étant câblée à la broche de terre (108), la deuxième borne (130A) du premier transistor étant connecté à la broche de données (114), éventuellement par l'intermédiaire d'un décaleur de niveau, la troisième borne (132A) étant câblée à la broche de sortie, et la quatrième borne (134A) étant câblée à la première borne, la première cellule de sortie étant adaptée pour fonctionner selon un premier mode dans lequel la tension sur la broche de sortie (118) présente une première amplitude, et selon un deuxième mode dans lequel la tension sur la broche de sortie (118) présente une deuxième amplitude supérieure à la première amplitude en fonction d'un signal de commande appliqué à l'au moins une broche pour sélection de tension, et la quatrième borne du deuxième transistor et le quatrième borne du troisième transistor étant câblées à une borne commune.</claim-text></claim>
<claim id="c-fr-01-0002" num="0002">
<claim-text>Circuit intégré selon la revendication 1, dans lequel la quatrième borne (134B) du deuxième transistor et la quatrième borne (134C) du troisième<!-- EPO <DP n="19"> --> transistor sont câblées à la broche d'alimentation de puissance portant la plus grande tension.</claim-text></claim>
<claim id="c-fr-01-0003" num="0003">
<claim-text>Circuit intégré selon l'une quelconque des revendications 1 à 2, dans lequel la première borne (128C) du troisième transistor est câblée à la deuxième broche d'alimentation de puissance, et dans lequel la première borne (128C) du troisième transistor est la borne commune.</claim-text></claim>
<claim id="c-fr-01-0004" num="0004">
<claim-text>Circuit intégré selon l'une quelconque des revendications 1 à 3, dans lequel la première borne (128B) du deuxième transistor est câblée à la première broche d'alimentation de puissance.</claim-text></claim>
<claim id="c-fr-01-0005" num="0005">
<claim-text>Circuit intégré selon l'une quelconque des revendications 1 à 4, dans lequel la troisième borne (132B, 132C) du deuxième transistor et le troisième transistor sont câblés à la broche de sortie (118).</claim-text></claim>
<claim id="c-fr-01-0006" num="0006">
<claim-text>Circuit intégré selon l'une quelconque des revendications 1 à 5, dans lequel le circuit intégré comprend une troisième rail d'alimentation adapté pour porter un troisième tension (V<sub>3</sub>), et dans lequel la première cellule de sortie comprend un quatrième transistor connecté entre la broche de sortie et une troisième broche d'alimentation de puissance, la troisième broche d'alimentation de puissance étant câblée au troisième rail d'alimentation.</claim-text></claim>
<claim id="c-fr-01-0007" num="0007">
<claim-text>Circuit intégré selon la revendication 6, dans lequel le quatrième transistor présente une première borne, une deuxième borne, une troisième borne et une quatrième borne, la quatrième borne étant câblée à la borne commune, et la première cellule de sortie étant adaptée pour fonctionner selon un troisième mode dans lequel la tension sur la première broche de sortie présente une troisième amplitude en fonction d'un signal de commande appliqué à l'au moins une broche pour sélection de tension.</claim-text></claim>
<claim id="c-fr-01-0008" num="0008">
<claim-text>Circuit intégré selon la revendication 7, dans lequel la première borne du quatrième transistor est câblée à la troisième broche d'alimentation de puissance, et la troisième borne du quatrième transistor est câblée à la broche de sortie.<!-- EPO <DP n="20"> --></claim-text></claim>
<claim id="c-fr-01-0009" num="0009">
<claim-text>Circuit intégré selon l'une quelconque des revendications 1 à 8, dans lequel la première cellule de sortie comprend un circuit logique ayant une entrée connectée à l'au moins une broche pour sélection de tension et à la broche de données, et une sortie connectée aux deuxièmes bornes du deuxième, troisième et quatrième transistor, si présent, pour sélectionner entre les modes en activant sélectivement respectivement les deuxième, troisième et quatrième transistors.</claim-text></claim>
<claim id="c-fr-01-0010" num="0010">
<claim-text>Circuit intégré selon l'une quelconque des revendications précédentes, dans lequel le circuit intégré comprend une âme (18) connectée à la première cellule de sortie, l'âme étant adaptée pour effectuer un traitement de signal pour un dispositif de correction auditive.</claim-text></claim>
<claim id="c-fr-01-0011" num="0011">
<claim-text>Dispositif de correction auditive comprenant un circuit intégré selon l'une quelconque des revendications précédentes.</claim-text></claim>
<claim id="c-fr-01-0012" num="0012">
<claim-text>Procédé de fabrication d'un circuit intégré, comprenant l'étape consistant à
<claim-text>- fournir au moins une cellule de sortie ayant une broche de sortie et au moins deux transistors d'entraînement chacun ayant une première borne connectée respectivement à une première et une deuxième broche d'alimentation de puissance de la cellule de sortie, une deuxième borne, une troisième borne connectée à la broche de sortie et à une quatrième borne,</claim-text>
la quatrième borne des deux transistors d'entraînement étant câblée si bien que la différence de tension entre la troisième et la quatrième borne des transistors d'entraînement respectifs est inférieure à la tension de seuil de diode entre la troisième et la quatrième borne,<br/>
et les quatre bornes des au moins deux transistors d'entraînement étant câblées à une borne commune.</claim-text></claim>
</claims>
<drawings id="draw" lang="en"><!-- EPO <DP n="21"> -->
<figure id="f0001" num="1,2"><img id="if0001" file="imgf0001.tif" wi="159" he="230" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="22"> -->
<figure id="f0002" num="3"><img id="if0002" file="imgf0002.tif" wi="159" he="134" img-content="drawing" img-format="tif"/></figure>
</drawings>
<ep-reference-list id="ref-list">
<heading id="ref-h0001"><b>REFERENCES CITED IN THE DESCRIPTION</b></heading>
<p id="ref-p0001" num=""><i>This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.</i></p>
<heading id="ref-h0002"><b>Patent documents cited in the description</b></heading>
<p id="ref-p0002" num="">
<ul id="ref-ul0001" list-style="bullet">
<li><patcit id="ref-pcit0001" dnum="US2011211717A"><document-id><country>US</country><doc-number>2011211717</doc-number><kind>A</kind></document-id></patcit><crossref idref="pcit0001">[0003]</crossref></li>
</ul></p>
</ep-reference-list>
</ep-patent-document>
