ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................JBDM Ver 0.1.59 (03 Mar 2017) - 2999001/02608268CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120170621W173deBibliographieenBibliographyfrBibliographieEP11194254.6201112192013103120140430enenen2017062120172520130626201326201704192017162017020220170621201725H01L 29/778 20060101AFI20170118BHEP H01L 29/872 20060101ALI20170118BHEP H01L 29/06 20060101ALI20170118BHEP H01L 29/20 20060101ALN20170118BHEP H01L 29/205 20060101ALN20170118BHEP deHalbleiterbauelementenSemiconductor devicefrDispositif semi-conducteurUS-A1- 2006 220 065US-A1- 2009 315 075SABA RAJABI ET AL: "A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement", SIGNAL PROCESSING, COMMUNICATION, COMPUTING AND NETWORKING TECHNOLOGIES (ICSCCN), 2011 INTERNATIONAL CONFERENCE ON, IEEE, 21 July 2011 (2011-07-21), pages 269-271, XP031940754, DOI: 10.1109/ICSCCN.2011.6024557 ISBN: 978-1-61284-654-5'grid' INTERNET CITATION, [Online] Merriam-Webster Dictionary Retrieved from the Internet: <URL:http://www.merriam-webster.com/diction ary/grid> [retrieved on 2014-08-20]"The Collins concise dictionary of the English language", 1988 pages 492-493,Mueller, Markusc/o NXP Semiconductors IP & L Betchworth House 57-65 Station RoadRedhil, Surrey RH1 1DGBHeringa, Ancoc/o NXP Semiconductors IP & L Betchworth House 57-65 Station RoadRedhill, Surrey RH1 1DLGBNexperia B.V.10165093081415814EP01Jonkerbosplein 526534 AB NijmegenNLTaiwan Semiconductor Manufacturing Company, Ltd.10103961381415814EP018, Li-Hsin Road 6Hsinchu 300-077TWCrawford, Andrewet al101649212WP Thompson 138 Fetter LaneLondon EC4A 1BTGBALATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMKMTNLNOPLPTRORSSESISKSMTR20130626201326