(57) The invention is an apparatus for production of an aluminum nitride single crystal
that produces the aluminum nitride single crystal by heating an aluminum nitride raw
material to sublimate the raw material, thereby to recrystallize the aluminum nitride
onto a seed crystal, which includes a growth vessel that accommodates the aluminum
nitride raw material, and is composed of a material that has corrosion resistance
with respect to the aluminum gas generated upon sublimation of the aluminum nitride
raw material, and a heating element that is arranged on the outside of the growth
vessel, and heats the aluminum nitride raw material through the growth vessel, wherein
the growth vessel includes a main body which has an accommodation section that accommodates
the aluminum nitride and a lid which seals the accommodation section of the main body
hermetically, and wherein the heating element is composed of a metal material containing
tungsten.
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