| (19) |
 |
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(11) |
EP 2 664 696 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
22.10.2014 Bulletin 2014/43 |
| (43) |
Date of publication A2: |
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20.11.2013 Bulletin 2013/47 |
| (22) |
Date of filing: 15.12.2006 |
|
| (51) |
International Patent Classification (IPC):
|
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| (84) |
Designated Contracting States: |
|
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE
SI SK TR |
| (30) |
Priority: |
15.12.2005 US 751387 P
|
| (62) |
Application number of the earlier application in accordance with Art. 76 EPC: |
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06830658.8 / 1977028 |
| (71) |
Applicant: Saint-Gobain Cristaux & Détecteurs |
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92400 Courbevoie (FR) |
|
| (72) |
Inventors: |
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- Beaumont, Bernard
06530 Le Tignet (FR)
- Faurie, Jean-Pierre
06560 Valbonne (FR)
- Gibart, Pierre
06740 Châteauneuf-Grasse (FR)
|
| (74) |
Representative: Regimbeau |
|
139, rue Vendôme
69477 Lyon Cedex 06
69477 Lyon Cedex 06 (FR) |
|
| |
|
| (54) |
Process for growth of low dislocation density gan |
(57) High quality free standing GaN is obtained using a new modification of the Epitaxial
Lateral Overgrowth technology in which 3D islands or features are created only by
tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter
by setting growth conditions producing enhanced growth. The repetition of 3D-2D growth
results in multiple bending of the threading dislocations thus producing thick layers
or free standing GaN with threading discloation density below 10
6 cm
-2.