VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY

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EP 2 668 312 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	25.12.2019 Bulletin 2019/52

(45)	Mention of the grant of the patent:
	20.11.2019 Bulletin 2019/47

(21)	Application number: 12708367.3

(22)	Date of filing: 24.01.2012

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International Patent Classification (IPC):

H01L 21/311^(2006.01)

B81C 1/00^(2006.01)

(86)	International application number:
	PCT/GB2012/050144

(87)	International publication number:
	WO 2012/101431 (02.08.2012 Gazette 2012/31)

(54)	VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY DAMPFÄTZUNG VON SILICIUMDIOXID MIT VERBESSERTER SELEKTIVITÄT ATTAQUE EN PHASE VAPEUR DE DIOXYDE DE SILICIUM AVEC SÉLECTIVITÉ AMÉLIORÉE

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

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Priority:

24.01.2011 GB 201101188

(43)	Date of publication of application:
	04.12.2013 Bulletin 2013/49

(73)	Proprietor: Memsstar Limited
	Livingston EH54 8SF (GB)

(72)	Inventor:
	O'HARA, Anthony Livingston EH54 8SF (GB)

(74)	Representative: Fulton, David James
	Lincoln IP 9 Victoria Street Aberdeen AB10 1XB Aberdeen AB10 1XB (GB)

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References cited: :

EP-A1- 1 382 565
WO-A1-2008/015434
US-A1- 2003 080 082
US-A1- 2006 216 941
US-B1- 8 187 486

WO-A1-99/60620
US-A- 6 048 406
US-A1- 2006 207 968
US-A1- 2006 216 941

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).