(19)
(11) EP 2 669 952 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
19.03.2014 Bulletin 2014/12

(43) Date of publication:
04.12.2013 Bulletin 2013/49

(21) Application number: 12004216.3

(22) Date of filing: 01.06.2012
(51) International Patent Classification (IPC): 
H01L 31/0224(2006.01)
H01L 31/18(2006.01)
 H01L 31/072(2012.01)
H01L 31/075(2012.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(71) Applicant: Roth & Rau AG
09337 Hohenstein-Ernstthal (DE)

(72) Inventors:
  • Lachenal, Damien
    2022 Bevaix (CH)
  • Wahli, Guillaume
    1024 Ecublens (CH)
  • Meixenberger, Jérôme
    2068 Hauterive (CH)
  • Strahm, Benjamin
    1429 Giez (CH)
  • Barraud, Loris
    2300 La Chaux-de-Fonds (CH)

(74) Representative: Steiniger, Carmen 
Kanzlei Dr. Steiniger Ricarda-Huch-Straße 4
09116 Chemnitz
09116 Chemnitz (DE)

   


(54) Photovoltaic device and method of manufacturing same


(57) Hetero-junction solar cell with front side TCO stack comprising a front-sided first transparent conductive layer (5) of a first base material with a first doping and a first non-stoichiometric composition, wherein the first base material is chosen from indium oxide, zinc oxide, tin oxide, and cadmium oxide; and a front-sided second transparent conductive layer (6, 6a, 6b) or structure of the first base material or a second base material, having the first or second doping and a second non-stoichiometric composition. The average carrier concentration of the whole front-sided transparent conductive material stack is between 1 x 1020 cm-3 and 2 x 1020 cm-3; the refractive indices (n) of the first and second layers are in the same range, wherein n > 2 at a wavelength of about 550 nm; and the carrier mobility in the font-sided first transparent conductive layer is higher than the carrier mobility in the front-sided second transparent conductive layer or structure if the layers/structure have a comparable thickness.