(19)
(11) EP 2 672 518 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
22.01.2014 Bulletin 2014/04

(43) Date of publication A2:
11.12.2013 Bulletin 2013/50

(21) Application number: 13181557.3

(22) Date of filing: 03.03.2005
(51) International Patent Classification (IPC): 
H01L 29/78(2006.01)
H01L 29/24(2006.01)
 H01L 29/267(2006.01)
(84) Designated Contracting States:
DE GB

(30) Priority: 09.03.2004 JP 2004065474

(62) Application number of the earlier application in accordance with Art. 76 EPC:
05004690.3 / 1575097

(71) Applicant: Nissan Motor Co., Ltd
Kanagawa-ken, Kanagawa (JP)

(72) Inventors:
  • Tanaka, Hideaki
    Yokosuka-shi Kanagawa (JP)
  • Hoshi, Masakatsu
    Yokohama-shi Kanagawa (JP)
  • Hayashi, Tetsuya
    Yokosuka-shi Kanagawa (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser 
Leopoldstrasse 4
80802 München
80802 München (DE)

   


(54) Semiconductor device with heterojunction


(57) A semiconductor device comprising a semiconductor base (100) made of a first semiconductor material of a first conductivity type; a hetero-semiconductor region (103) forming a heterojunction with the semiconductor base (100) and made of a second semiconductor material having a different band gap from the first semiconductor material; a trench (110) formed through the hetero-semiconductor region (103) to reach the semiconductor base (100); a first gate insulating film (104) formed in the trench (110); a first gate electrode (105) formed in the trench (110) and insulated from the semiconductor base (100) by the first gate insulating film (104); a source electrode (108) formed in contact with the hetero-semiconductor region (103); a drain electrode (109) formed in contact with the semiconductor base (100); and characterized by an electric field extending region (106) at least partly facing the first gate electrode (105), the first gate insulating film (104) and the hetero-semiconductor region (103) interposed between the electric field extending region (106) and the first gate electrode (105), the electric field extending region (106) extending a built-in electric field into the hetero-semiconductor region (103), wherein the electric field extending region (106) is made of a material that is different from that of the adjacent hetero-semiconductor region (103) and the adjacent semiconductor base (100).







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