(19)
(11) EP 2 709 154 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
18.10.2017 Bulletin 2017/42

(43) Date of publication A2:
19.03.2014 Bulletin 2014/12

(21) Application number: 13184152.0

(22) Date of filing: 12.09.2013
(51) International Patent Classification (IPC): 
H01L 27/06(2006.01)
H01L 29/66(2006.01)
 H01L 27/08(2006.01)
H01L 31/111(2006.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30) Priority: 13.09.2012 US 201213613848

(71) Applicant: General Electric Company
Schenectady, NY 12345 (US)

(72) Inventors:
  • Soloviev, Stanislav Ivanovich
    Niskayuna, NY 12309 (US)
  • Elasser, Ahmed
    Niskayuna, NY 12309 (US)
  • Bolotnikov, Alexander Viktorovich
    Niskayuna, NY 12309 (US)
  • Vert, Alexey
    Clifton Park, NY 12065 (US)
  • Losee, Peter Almern
    Starkville, MS 39759 (US)

(74) Representative: Williams, Andrew Richard 
GE International Inc. GPO-Europe The Ark 201 Talgarth Road Hammersmith
London W6 8BJ
London W6 8BJ (GB)

   


(54) Semiconductor Device and Method for Making the Same


(57) A semiconductor device (11) is provided. The semiconductor device includes an avalanche photodiode unit (26) and a thyristor unit (25). The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.







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