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<ep-patent-document id="EP12194982B1" file="EP12194982NWB1.xml" lang="en" country="EP" doc-number="2738544" kind="B1" date-publ="20160928" status="n" dtd-version="ep-patent-document-v1-5">
<SDOBI lang="en"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................</B001EP><B005EP>J</B005EP><B007EP>JDIM360 Ver 1.28 (29 Oct 2014) -  2100000/0</B007EP></eptags></B000><B100><B110>2738544</B110><B120><B121>EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B1</B130><B140><date>20160928</date></B140><B190>EP</B190></B100><B200><B210>12194982.0</B210><B220><date>20121130</date></B220><B240><B241><date>20131031</date></B241></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B400><B405><date>20160928</date><bnum>201639</bnum></B405><B430><date>20140604</date><bnum>201423</bnum></B430><B450><date>20160928</date><bnum>201639</bnum></B450><B452EP><date>20160621</date></B452EP></B400><B500><B510EP><classification-ipcr sequence="1"><text>G01N  21/15        20060101AFI20160510BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>G01N  21/94        20060101ALI20160510BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>G01N  21/53        20060101ALN20160510BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>Erkennung einer verschmutzenden Schicht auf einem Umgebungssensor</B542><B541>en</B541><B542>Fouling layer detection on an environmental sensor</B542><B541>fr</B541><B542>Détection de couche d'encrassement sur un capteur environnemental</B542></B540><B560><B561><text>DE-A1- 10 214 421</text></B561><B561><text>DE-A1- 10 308 544</text></B561><B561><text>DE-A1-102006 039 034</text></B561></B560></B500><B700><B720><B721><snm>Syed, Aly</snm><adr><str>c/o NXP B.V.
Intellectual Property &amp; Licensing
Red Central
60 High Street
Redhill</str><city>Redhill, Surrey RH1 1SH</city><ctry>GB</ctry></adr></B721><B721><snm>Agarwal, Manvi</snm><adr><str>c/o NXP B.V.
Intellectual Property &amp; Licensing
Red Central
60 High Street
Redhill</str><city>Redhill, Surrey RH1 1SH</city><ctry>GB</ctry></adr></B721></B720><B730><B731><snm>NXP B.V.</snm><iid>101002440</iid><irf>81525786EP01</irf><adr><str>High Tech Campus 60</str><city>5656 AG Eindhoven</city><ctry>NL</ctry></adr></B731></B730><B740><B741><snm>Hardingham, Christopher Mark</snm><sfx>et al</sfx><iid>101423837</iid><adr><str>NXP Semiconductors 
Intellectual Property and Licensing 
Red Central 
60 High Street</str><city>Redhill, Surrey RH1 1SH</city><ctry>GB</ctry></adr></B741></B740></B700><B800><B840><ctry>AL</ctry><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IS</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LT</ctry><ctry>LU</ctry><ctry>LV</ctry><ctry>MC</ctry><ctry>MK</ctry><ctry>MT</ctry><ctry>NL</ctry><ctry>NO</ctry><ctry>PL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>RS</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>SM</ctry><ctry>TR</ctry></B840><B880><date>20140604</date><bnum>201423</bnum></B880></B800></SDOBI>
<description id="desc" lang="en"><!-- EPO <DP n="1"> -->
<heading id="h0001"><b>BACKGROUND OF THE INVENTION</b></heading>
<p id="p0001" num="0001">This invention relates an environmental sensor. This invention also relates to a method of operating an environmental sensor.</p>
<p id="p0002" num="0002">Environmental sensors can be used for the determination of various physical parameters such as temperature, light intensity, pressure, strain, shock, moisture, carbon dioxide and many other gases in various environments such as buildings (e.g. houses, offices, warehouses, green houses etc.), vehicles such as cars and trucks (for example in the passenger compartment, or in the engine of the vehicle), in-vitro and even in-vivo applications.</p>
<p id="p0003" num="0003">There is a clear society trend to make homes and building smart, meaning that the ecological footprint of homes and buildings must be reduced as much possible. A lot of energy in buildings and homes is used in heating, ventilation and air conditioning (HVAC). A carbon dioxide sensor can, for example, monitor the quality of the air and together with a temperature and humidity sensor feedback the results to the HVAC system that then can take appropriate actions. Additional energy reduction can be achieved by environmental sensors that measure the light intensity in a room and adjust the artificial lighting accordingly. All these environmental sensors can also be connected through networks. In this way lighting, temperature, fresh air and humidity can be dynamically adjusted rather than following a pre-programmed regime and in this way the ecological footprint can be reduced.</p>
<p id="p0004" num="0004">It is also very well thinkable that environmental sensors such as pressure, airborne particles, carbon dioxide, and carbon monoxide sensors, and sensors to monitor breath composition will increasingly appear in mobile devices such as mobile telephones or tablets.<!-- EPO <DP n="2"> --></p>
<p id="p0005" num="0005">Another application domain is in the car, where the drivers and passengers want to monitor the quality of air for contaminants and particles and where the control systems then can take appropriate action such as shutting down or filtering in coming air.</p>
<p id="p0006" num="0006">Another application domain is in the white good market segment. For example, moisture and grease layers in refrigerators can indicate the level of hygiene in the refrigerator. An environmental sensor in the refrigerator, that can monitor levels of for example NH3 or other freshness of food related gases, can malfunction in case moisture or grease layers accumulate..</p>
<p id="p0007" num="0007">In many of these applications the sensors will be used for years, aiming for undisturbed functioning as an autonomous device. During that time and while exposed to the ambient it is very well possible that the surface of the sensor will see a deposit of materials such as dust, oil, salt, grease etc. For optical (light intensity measurements) as well as chemical sensors (moisture, gases, liquids) and mechanical sensors (e.g. MEMS based devices) such as pressure sensors including a diaphragm, these fouling layers can severely impact proper reading of the parameter.</p>
<p id="p0008" num="0008">German Patent application publication number <patcit id="pcit0001" dnum="DE10214421"><text>DE10214421</text></patcit> discloses a rain sensor which detects a rain dependant light component, by reflection, and an ambient light dependant component, with the latter used to adjust a rain threshold value.</p>
<p id="p0009" num="0009">Although there have been reports on the detection of fouling layers (<patcit id="pcit0002" dnum="US5998782A"><text>US 5,998,782</text></patcit>; <patcit id="pcit0003" dnum="EP1457763A"><text>EP 1457763</text></patcit>; <patcit id="pcit0004" dnum="DE102006039034"><text>DE 102006039034</text></patcit> , <patcit id="pcit0005" dnum="JP2002296342B"><text>JP 2002296342</text></patcit>, <patcit id="pcit0006" dnum="US8144330B"><text>US 8,144,330</text></patcit> and <patcit id="pcit0007" dnum="US7652586B"><text>US 7,652,586</text></patcit>) none of those are in the field of environmental sensors.<!-- EPO <DP n="3"> --></p>
<heading id="h0002"><b>SUMMARY OF THE INVENTION</b></heading>
<p id="p0010" num="0010">Particular and preferred aspects of the invention are set out in the accompanying independent and dependent claims.</p>
<p id="p0011" num="0011">According to an aspect of the invention there is provided an environmental sensor as defined in claim 1.</p>
<p id="p0012" num="0012">According to another aspect of the invention, there is provided a method of operating an environmental sensor as defined in claim 9.</p>
<p id="p0013" num="0013">Environmental sensors will inherently be exposed to the environment and therefore can suffer fouling layer accumulation. These fouling layers can inhibit correct reading of the parameters of interest. According to embodiments of the invention, it is not only possible to implement fouling layer detection in environmental sensors comprising semiconductor substrates, but it is also possible to take advantage of semiconductor substrate features such as miniaturization, low cost manufacturing and multiple sensor integration.</p>
<p id="p0014" num="0014">An environmental sensor according to an embodiment of the invention can combine fouling layer detection with sensors such as a standalone smoke or a standalone CO or CO<sub>2</sub> sensor.<!-- EPO <DP n="4"> --></p>
<p id="p0015" num="0015">Whereas in some examples the environmental sensor can comprise a standalone light source and a standalone light detector, it is also possible to combine the light source and the light detector in a common semiconductor substrate, for a more compact construction and to allow lower cost manufacturing.</p>
<p id="p0016" num="0016">The semiconductor substrate in an environmental sensor can enable many more sensors to be integrated. In addition to a light sensor it is, according to an embodiment of the invention, possible to further integrate pressure, temperature and gas sensors in one common semiconductor substrate.</p>
<p id="p0017" num="0017">In one example, the light source can be constructed as a light emitting diode (LED). This allows a more compact and power efficient construction.</p>
<p id="p0018" num="0018">The light sensor can analyse a frequency spectrum of the received light to differentiate between different kinds of ambient light sources. This differentiation can be utile when the environmental sensor is used in a system that regulates the lighting conditions in a building or a room.</p>
<p id="p0019" num="0019">According to the invention the environmental sensor is packaged in a semiconductor package that allows access of the sensor to the surrounding and the surface comprises a window in the package.</p>
<p id="p0020" num="0020">Alternatively, the surface comprises a material (for example, an oxide) deposited on the semiconductor substrate.</p>
<p id="p0021" num="0021">In this way the packaging of the sensor can be simplified (since no separate provision (such as a window) need be made in the package itself to form the reflecting surface).</p>
<p id="p0022" num="0022">The surface comprising a layer of material deposited on the semiconductor substrate comprises silicon nitride, silicon oxynitride or silicon dioxide. These are materials that are in common use in semiconductor manufacturing further enabling low cost manufacturing.<!-- EPO <DP n="5"> --></p>
<p id="p0023" num="0023">The environmental sensor can form part of an environmental management system, either as a stand-alone sensor, or as part of a network of sensors in a building automation system.</p>
<p id="p0024" num="0024">According to the invention, the intensity of the reflected light in the presence of ambient light is determined by making a first intensity measurement with the light source off and a second measurement with the light source on. By subtracting the two intensities the reflected light intensity will remain.</p>
<p id="p0025" num="0025">According to an embodiment of the invention, there is provided a method to measure the intensity of the reflected light by the surface on which there is no fouling present and in the absence of ambient light, for use as a calibrated light intensity characteristic for a clean transparent surface. This intensity can be used as a reference value to compare with intensity values of the reflected light whereas there is a fouling layer present.</p>
<p id="p0026" num="0026">According to an embodiment of the invention, frequency analysis of the ambient and reflected light can be used to differentiate between different kinds of ambient light sources. This differentiation can be utilized when the environmental sensor is used to in a system that regulates the lighting conditions in a building or a room.</p>
<p id="p0027" num="0027">Frequency analysis of the ambient and reflected light can be used to determine factors such as the structure, composition or thickness of a fouling layer.<!-- EPO <DP n="6"> --></p>
<heading id="h0003"><b>BRIEF DESCRIPTION OF THE DRAWINGS</b></heading>
<p id="p0028" num="0028">Embodiments of the present invention will be described hereinafter, by way of example only, with reference to the accompanying drawings in which like reference signs relate to like elements and in which:
<ul id="ul0001" list-style="none" compact="compact">
<li><figref idref="f0001">Figure 1</figref> shows a first embodiment of the invention with light source and light sensor on different substrates;</li>
<li><figref idref="f0001">Figure 2</figref> shows a second embodiment of the invention in which in addition to embodiment 1 a temperature sensor on a different semiconductor substrate is added;</li>
<li><figref idref="f0002">Figure 3</figref> shows a third embodiment of the invention whereas light sensor and light source are integrated in a common substrate;</li>
<li><figref idref="f0002">Figure 4</figref> shows a fourth embodiment of the invention with an integrated moisture sensor;</li>
<li><figref idref="f0003">Figure 5</figref> shows a top view of the environmental sensor of <figref idref="f0002">Figure 4</figref>;</li>
<li><figref idref="f0003">Figure 6</figref> shows a fifth embodiment of the invention with the surface deposited on the semiconductor substrate; and</li>
<li><figref idref="f0004">Figure 7</figref> shows a top view of the environmental sensor of <figref idref="f0003">Figure 6</figref>.</li>
</ul><!-- EPO <DP n="7"> --></p>
<heading id="h0004"><b>DETAILED DESCRIPTION</b></heading>
<p id="p0029" num="0029">Embodiments of the present invention are described in the following with reference to the accompanying drawings.</p>
<p id="p0030" num="0030"><figref idref="f0001">Figure 1</figref> schematically illustrates a first embodiment of the invention. In accordance with this embodiment, there is provided a light source 15, a light sensor 10 in a semiconductor substrate 20 and a surface 5. The surface 5 comprises a piece of material (for example quartz) through which light can pass. It can have a rectangular or circular or other shape. The surface 5 is exposed to the environment and can therefore accumulate a fouling layer 3. The fouling layer 3 material can be various substances such as grease, dust, particles, oil and salt coming from various sources such as the wind, industrial activities and smoking.</p>
<p id="p0031" num="0031">Ambient light from the surrounding environment can pass through the fouling layer 3 and the surface 5 and can reach the light sensor 10. A portion of the light originating from the light source 15 can be reflected by the fouling layer 3 to reach the light sensor 10. In the semiconductor substrate 20, peripheral circuitry for measurement programming and signal processing can be integrated. This allows that a first measurement of intensity at t=t1 is performed in which ambient light passes through the fouling layer and through the surface 5, while the light source 15 is turned off and results in a measured intensity I1. Then a second measurement of intensity at t= t2 can be performed while the light source 15 is turned on and results in a measured intensity I2. Subsequently I1 can be subtracted from I2 in the signal processing part of the circuitry and the result, Ic = I2-I1, is then a measure of the intensity of the reflected light. The intensity of light reflected by the surface 5 depends on the material of the surface 5 itself but also on the presence of a fouling layer. It is expected that the amount of light that is received by the light sensor when a fouling layer is present will change compared to the situation when no fouling layer is present because part of the light can now also be scattered, reflected or absorbed by the fouling layer. Therefore a change in received light by the light sensor can be a measure for the presence of a fouling layer.<!-- EPO <DP n="8"> --></p>
<p id="p0032" num="0032">There should not be a too large time difference between t1 and t2, as a reliable determination of Ic is only possible if the intensity of the ambient light has not changed substantially between t1 and t2. A typical time difference between t1 and t2 should be certainly less than a second but can be as small as a few nanoseconds. For example when the environmental sensor is in a room where there is only artificial lighting then the intensity of the ambient light will not fluctuate a lot. However, when the environmental sensor is placed outdoors, strong light fluctuations can occur, for example when a cloud is blocking sun light. In a further refinement, it is also possible to record the intensity of the reflected light, Ir, on a new, unused environmental sensor that has not been exposed to the environment and thus no fouling layer will be present. The difference Ic-Ir is then also a measure for the amount of fouling layer 3 accumulated on the surface 5.</p>
<p id="p0033" num="0033">The light source 15 in this embodiment can be made in several ways but a light emitting diode (LED) can provide a very energy efficient solution. Alternatively it is also possible to construct the light source 15 using OLED technology.</p>
<p id="p0034" num="0034">It is also possible to use a plurality of light sources that generate light at different wavelengths. For example AlGaAs generates predominantly infra red light whereas InGaN can generate predominantly ultra violet light. Performing measurements at more than one wavelength can be advantageous in cases where more details about the fouling layer are desirable.</p>
<p id="p0035" num="0035">According to the first embodiment, the light sensor is integrated in a semiconductor substrate. The light sensor can be a simple device such as a light dependent resistor (LDR) or a more advanced device such as one based on photodiodes or phototransistors in the semiconductor substrate that control the flow of holes or electrons across their PN junctions. By combining refraction grids on top of the semiconductor substrate it is possible to let only light at a specific wavelength pass on to the light sensor. The grids can be made during the manufacturing of the different devices in semiconductor substrate from parallel lines made out of polysilicon, dielectric or metal materials. By proper choice of the line spacings, light with different wavelengths can be tuned to reach the light sensor. By combining several light sensors with different grids it is possible to generate an intensity profile at<!-- EPO <DP n="9"> --> different wavelengths of the received light. This feature can be particularly useful in situations where the nature of the fouling layer is known, for example it is known that the fouling layer can be either of an organic nature such as grease or oil or that the fouling layer can be condensation of water. In this case a wavelength will be chosen such that the light is absorbed by either the organic layer or the water layer. Further refinement of this characterization is anticipated when models and algorithms are included in the on-board peripheral circuitry of the environmental sensor. In the models and algorithms, information can be stored at which wavelengths of the ambient light that passes through the fouling layer, absorption will occur.</p>
<p id="p0036" num="0036"><figref idref="f0001">Figure 2</figref> schematically illustrates a second embodiment of the invention. In accordance with this embodiment, there is provided a light source 15, a light sensor 10 in a semiconductor substrate 20, a surface 5 and a further sensor 45 (for example a temperature sensor) also in a substrate 22. In this way it is possible to extend the environmental sensor with many more sensors that by nature are difficult to integrate in one common semiconductor substrate. For example the light source can be made in a GaN substrate, the light sensor could be made in a CdS substrate and the temperature sensor in a silicon substrate.</p>
<p id="p0037" num="0037"><figref idref="f0002">Figure 3</figref> schematically illustrates a third embodiment of the invention. In accordance with this embodiment, there is provided a light source 15, a light sensor 10 in a semiconductor substrate 20 and a surface 5. According to this embodiment of the invention, the light source 15 and the light sensor are integrated in a common semiconductor substrate. This embodiment takes advantage of semiconductor mass volume manufacturing leading to very low costs. Another advantage is that the environmental sensor can be more compact than in the first embodiment. In this embodiment it is also possible to have the integrated light source 15 in the form of a light emitting diode (LED).</p>
<p id="p0038" num="0038"><figref idref="f0002">Figure 4</figref> schematically illustrates a fourth embodiment of the invention. <figref idref="f0003">Figure 5</figref> provides a top view of embodiment 4. In accordance with this embodiment, there is provided a light source 15, a light sensor 10 in a semiconductor substrate 20, a surface 5, a moisture sensor 25 and a package 30 with opening 35 to expose the moisture sensor to the ambient. Also there is a foiling layer 3 that covers the entire region<!-- EPO <DP n="10"> --> exposed to the environment. The moisture sensor can be realized by a measurement of the capacitance of a capacitor in which the two electrodes are formed with two interdigitated fingers and where the dielectric material can be a moisture sensitive polymer. When moisture is taken up by the polymer there will be a change in its dielectric constant and that will cause a change in the measured capacity.</p>
<p id="p0039" num="0039">The light source 15, the light sensor 10 and the moisture sensor 25 in this example are all integrated in one common semiconductor substrate, therefore taking the same advantage as in embodiment 3 in terms of compactness as well as low cost manufacturing. According to this embodiment of the invention, the environmental sensor is provided within a package 30, as is quite common in semiconductor devices, in order to protect the environmental sensor against mechanical, chemical and other influences. The package supports a surface 5 to allow for the same measurements as described in embodiment 1 and 2. As mentioned earlier the surface 5 can be made of materials such as quartz and must allow the passing of ambient light. The size of the surface 5 can be larger than the opening in the package so that it can be sealed on top of the package with the aid of a compatible glue. The package provides further an opening 35 to enable contact of the integrated moisture sensor to the environment.</p>
<p id="p0040" num="0040"><figref idref="f0003">Figure 6</figref> schematically illustrates a fifth embodiment of the invention. In <figref idref="f0004">Figure 7</figref> a top view of the fifth embodiment is given. In accordance with this embodiment, there is provided a light source 15, a light sensor 10 in a semiconductor substrate 20, a surface 40, a package 30 and a moisture sensor 25. The package also provides an opening 35 to provide ambient contact for the moisture sensor and for the surface 5. The difference with the third embodiment is the way the surface is provided. According to this embodiment of the invention the surface is deposited directly on the semiconductor substrate and can be made of materials that are standard in semiconductor processing, for example a layer of silicon-oxy-nitride (SiON) or silicon dioxide (SiO2). The layer can be deposited using chemical vapour deposition or plasma enhanced chemical vapour deposition techniques or spin-on-glass techniques. The thickness of the SiON or SiO2 layers is not critical, but typical values will be in the range of 0.5 to 1.0 microns. If needed, standard patterning (lithography and etching) techniques can be used to free up the substrate where<!-- EPO <DP n="11"> --> needed for the moisture sensor. This embodiment simplifies the packaging of the environmental sensor.</p>
<p id="p0041" num="0041">It is known that many styles of environmental sensors can be made in CMOS technology. For example shock, pressure, temperature, light, moisture and gases have been reported. In embodiments 1 and 2 sensors that do not need a direct opening to the environment like the shock, temperature and light sensors can be directly integrated in the semiconductor substrate. In embodiments 3 and 4 it is possible to add to the shock, temperature and light sensor also sensors like the pressure, moisture and the gas sensors because these will require a direct opening 35 to the ambient. Because these sensors can be impacted by fouling layers, having an environmental sensor equipped with fouling layer detection is very advantageous.</p>
<p id="p0042" num="0042">The fouling detection integrated with some of the sensors mentioned above can be very utile in environmental management systems for homes and buildings. The environmental management system (EMS) will contain environmental sensors that can monitor parameters like the temperature, the humidity, the light levels and the CO2 concentration in the air. The environmental sensors can be part of a network of sensors placed throughout the building. In such an application it is desirable to integrate other circuitry in the semiconductor substrate that can communicate, wireless or wired, with the environmental management system and transmit output signals. In these management systems the output signals of the environmental sensors can be used to adjust heating or cooling, humidifiers, fresh air inlets, artificial lighting intensity on and so forth on a continuous and demand basis. It is clear that the environmental sensors in the homes and buildings will be in use for many years. During that period the sensor can track the accumulation of fouling layers. This can be done if a non-volatile memory has been integrated in the semiconductor substrate. This memory can then be used to log the data that is provided by the measuremements over time. The accumulation can be reported back to the management system that can then take appropriate actions for example initiate maintenance or, in case of unexpected fast accumulation or accumulation of an unexpected composition, explore possible culprits.<!-- EPO <DP n="12"> --></p>
<p id="p0043" num="0043">Other fields of application are in mobile phones or tablets, white goods, in automotive but also in in-vivo and in-vitro situations.</p>
<p id="p0044" num="0044">For example, in a refrigerator there can be heavy build up of water condensation and grease layers. This can cause malfunctioning of the apparatus with possibly health hazards. The application of an environmental sensor can detect the accumulation of such layers and give a signal that cleaning is needed.</p>
<p id="p0045" num="0045">In an automobile similar principles as described above in the case of home and building environmental management system may also apply. For example, if in front of the car there is another vehicle that produces heavy smoke from its exhaust, then an environmental detector can detect the particles in the air or perhaps elevated levels of CO and close subsequently the fresh air intake channels of the car.</p>
<p id="p0046" num="0046">In mobile phones or tablets it can be possible to include environmental sensors to measure for example pressure or the CO<sub>2</sub> levels in a room.</p>
<p id="p0047" num="0047">In all the embodiments and example given above it is assumed that there is an accumulation of fouling layers. However, it is very well thinkable that there are applications where the environmental sensor is actual in a situation where etching of the surface can occur. For example, in case the environmental sensor is used to monitor certain aspects of industrial waste water, the surface can be etched by an acid and the surface texture can change. This will also induce a change in the reflected light intensity and this signal can then be used for monitoring purposes as well or to give a warning signal that the integrity of the environmental sensor is at stake. In such examples, the fouling layer comprises the part of the surface that is affected (e.g. etched).</p>
<p id="p0048" num="0048">Accordingly, there has been described an environmental sensor and a method of operating an environmental sensor. The environmental sensor includes: a semiconductor substrate including a light sensor; a surface through which ambient light can pass to reach a light sensor, a light source operable to illuminate the surface, whereby at least some of the light from the light source is reflected by the surface onto the light sensor. The environmental sensor is operable to determine the presence<!-- EPO <DP n="13"> --> of a fouling layer on the surface by comparing measurements of ambient light and reflected light by the at least one light sensor.</p>
<p id="p0049" num="0049">Although particular embodiments of the invention have been described, it will be appreciated that many modifications/additions and/or substitutions may be made within the scope of the claimed invention.</p>
</description>
<claims id="claims01" lang="en"><!-- EPO <DP n="14"> -->
<claim id="c-en-01-0001" num="0001">
<claim-text>An environmental sensor comprising:
<claim-text>a semiconductor substrate (20) including a light sensor (10);</claim-text>
<claim-text>a surface (5; 40)</claim-text>
<claim-text>through which ambient light can pass to reach the light sensor, and</claim-text>
<claim-text>a light source (15) operable to illuminate the surface, whereby at least some of the light from the light source is reflected by the surface onto the light sensor, wherein the environmental sensor is operable to determine the presence of a fouling layer (3) on the surface by making a first measurement comprising measuring the intensity of the ambient light that passes the surface while the light source is turned off, making a second measurement comprising measuring the intensity of the light reaching the light sensor while the light source is turned on, and subtracting the first measured intensity from the second measured intensity, and using the result of the subtraction to determine the intensity of the reflected light,</claim-text>
<claim-text><b>characterised in that</b> the surface comprises one of a window in a semiconductor package (30) of the environmental sensor and a material deposited on the semiconductor substrate.</claim-text></claim-text></claim>
<claim id="c-en-01-0002" num="0002">
<claim-text>The environmental sensor of claim 1, wherein the light sensor and the light source are integrated in a common semiconductor substrate.</claim-text></claim>
<claim id="c-en-01-0003" num="0003">
<claim-text>The environmental sensor of claim 1 or claim 2 comprising at least one further type of sensor (25).</claim-text></claim>
<claim id="c-en-01-0004" num="0004">
<claim-text>The environmental sensor of claim 3, wherein the light sensor, the light source and the further sensor are each integrated on a common substrate, wherein the at least one further sensor is located in a first region of the substrate and the light source and light sensor are located in a second region of the substrate, wherein the second region is shielded from the environment by the surface, and wherein the first region is exposed to the environment.<!-- EPO <DP n="15"> --></claim-text></claim>
<claim id="c-en-01-0005" num="0005">
<claim-text>The environmental sensor of any preceding claim in which the light source is an LED device.</claim-text></claim>
<claim id="c-en-01-0006" num="0006">
<claim-text>The environmental sensor of any preceding claim operable to analyse a frequency spectrum of the received light to differentiate between different kinds of ambient light sources.</claim-text></claim>
<claim id="c-en-01-0007" num="0007">
<claim-text>The environmental sensor of any preceding claim, wherein the surface comprises a material deposited on the semiconductor substrate and the material deposited on the semiconductor substrate comprises silicon nitride, silicon oxynitride or silicon dioxide.</claim-text></claim>
<claim id="c-en-01-0008" num="0008">
<claim-text>An environmental management system comprising at least one environmental sensor according to any preceding claim.</claim-text></claim>
<claim id="c-en-01-0009" num="0009">
<claim-text>A method of operating an environmental sensor comprising a semiconductor substrate (20) including a light sensor (10), a surface (5; 40) through which ambient light can pass to reach the light sensor, and a light source (15) operable to illuminate the surface, whereby at least some of the light from the light source is reflected by the surface onto the light sensor, the method comprising: determining the presence of a fouling layer (3) on the surface by making a first measurement comprising measuring the intensity of the ambient light that passes the surface while the light source is turned off, making a second measurement comprising measuring the intensity of the light reaching the light sensor while the light source is turned on, and subtracting the first measured intensity from the second measured intensity, and using the result of the subtraction to determine the intensity of the reflected light,<br/>
<b>characterized in that</b><br/>
the surface comprises one of a window in a semiconductor package (30) of the environmental sensor and a material deposited on the semiconductor substrate.<!-- EPO <DP n="16"> --></claim-text></claim>
<claim id="c-en-01-0010" num="0010">
<claim-text>The method of claim 9 comprising measuring the intensity by the light sensor of light from the light source while the light source is turned off, on which no fouling layer is present, in the absence of ambient light, for use as a calibrated light intensity characteristic for a clean transparent surface.</claim-text></claim>
<claim id="c-en-01-0011" num="0011">
<claim-text>The method of any of claims 9 or 10 comprising analysing a frequency spectrum of the received light to differentiate between different kinds of ambient light sources.</claim-text></claim>
</claims>
<claims id="claims02" lang="de"><!-- EPO <DP n="17"> -->
<claim id="c-de-01-0001" num="0001">
<claim-text>Ein Umgebungssensor aufweisend:
<claim-text>ein Halbleiter Substrat (20), welches einen Lichtsensor (10) enthält;</claim-text>
<claim-text>eine Oberfläche (5; 40) durch welche Umgebungslicht passieren kann, um den Lichtsensor zu erreichen, und</claim-text>
<claim-text>eine Lichtquelle (15), welche betreibbar ist, um die Oberfläche zu beleuchten, wobei zumindest etwas von dem Licht von der Lichtquelle mittels der Oberfläche auf den Lichtsensor reflektiert ist,</claim-text>
wobei der Umgebungssensor betreibbar ist zum Bestimmen der Anwesenheit von einer Verschmutzungsschicht (3) an der Oberfläche mittels<br/>
Durchführens einer ersten Messung, welche ein Messen der Intensität von dem Umgebungslicht aufweist, welches die Oberfläche passiert während die Lichtquelle ausgeschaltet ist,<br/>
Durchführen einer zweiten Messung, welche ein Messen der Intensität von dem Licht aufweist, welches den Lichtsensor erreicht während die Lichtquelle eingeschaltet ist, und Subtrahieren der ersten gemessenen Intensität von der zweiten gemessenen Intensität, und Verwenden des Resultats von der Subtraktion, um die Intensität von dem reflektierten Licht zu bestimmen,<br/>
<b>dadurch gekennzeichnet, dass</b><br/>
die Oberfläche eines aufweist von<br/>
einem Fenster in einem Halbleiter Package (30) von dem Umgebungssensor und<br/>
ein Material, welches auf dem Halbleiter Substrat abgelagert ist.</claim-text></claim>
<claim id="c-de-01-0002" num="0002">
<claim-text>Der Umgebungssensor gemäß Anspruch 1, wobei der Lichtsensor und die Lichtquelle in einem gemeinsamen Halbleiter Substrat integriert sind.</claim-text></claim>
<claim id="c-de-01-0003" num="0003">
<claim-text>Der Umgebungssensor gemäß Anspruch 1 oder Anspruch 2, aufweisend zumindest einen weiteren Sensortyp (25).<!-- EPO <DP n="18"> --></claim-text></claim>
<claim id="c-de-01-0004" num="0004">
<claim-text>Der Umgebungssensor gemäß Anspruch 3, wobei der Lichtsensor, die Lichtquelle und der weitere Sensor jeweils integriert sind auf einem gemeinsamen Substrat,<br/>
wobei der zumindest eine weitere Sensor in einem ersten Bereich von dem Substrat lokalisiert ist und die Lichtquelle und der Lichtsensor in einem zweiten Bereich von dem Substrat lokalisiert sind,<br/>
wobei der zweite Bereich von der Umgebung mittels der Oberfläche abgeschirmt ist, und wobei der erste Bereich zu der Umgebung exponiert ist.</claim-text></claim>
<claim id="c-de-01-0005" num="0005">
<claim-text>Der Umgebungssensor gemäß einem beliebigen vorhergehenden Anspruch, in welchem die Lichtquelle eine LED Vorrichtung ist.</claim-text></claim>
<claim id="c-de-01-0006" num="0006">
<claim-text>Der Umgebungssensor gemäß einem beliebigen vorhergehenden Anspruch, welcher betreibbar ist, um ein Frequenzspektrum von dem empfangenen Licht zu analysieren, um zwischen verschiedenen Arten von Umgebungslichtquellen zu unterscheiden.</claim-text></claim>
<claim id="c-de-01-0007" num="0007">
<claim-text>Der Umgebungssensor gemäß einem beliebigen vorhergehenden Anspruch,<br/>
wobei die Oberfläche ein Material aufweist, welches auf dem Halbleiter Substrat abgelagert ist, und<br/>
das Material, welches auf der Halbleiter Struktur abgelagert ist, Siliziumnitrid, Siliziumoxinitrid oder Siliziumdioxid aufweist.</claim-text></claim>
<claim id="c-de-01-0008" num="0008">
<claim-text>Ein Umgebung Management System, welches zumindest einen Umgebungssensor gemäß einem beliebigen vorhergehenden Anspruch aufweist.</claim-text></claim>
<claim id="c-de-01-0009" num="0009">
<claim-text>Ein Verfahren zum Betreiben eines Umgebungssensors, welcher aufweist ein Halbleiter Substrat (20), welches einen Lichtsensor (10) enthält,<br/>
eine Oberfläche (5; 40) durch welche Umgebungslicht passieren kann, um den Lichtsensor zu erreichen, und<br/>
eine Lichtquelle (15), welche betreibbar ist, um die Oberfläche zu beleuchten,<br/>
wobei zumindest etwas von dem Licht von der Lichtquelle mittels der Oberfläche auf den Lichtsensor reflektiert wird,<br/>
das Verfahren aufweisend:<!-- EPO <DP n="19"> -->
<claim-text>Bestimmen der Anwesenheit von einer Verschmutzungsschicht (3) an der Oberfläche mittels Durchführens einer ersten Messung, welche ein Messen der Intensität von dem Umgebungslicht aufweist, welches die Oberfläche passiert während die Lichtquelle ausgeschaltet ist,</claim-text>
<claim-text>Durchführen einer zweiten Messung, welche ein Messen der Intensität von dem Licht aufweist, welches den Lichtsensor erreicht während die Lichtquelle eingeschaltet ist, und</claim-text>
<claim-text>Subtrahieren der ersten gemessenen Intensität von der zweiten gemessenen Intensität, und</claim-text>
<claim-text>Verwenden des Resultats von der Subtraktion, um die Intensität von dem reflektierten Licht zu bestimmen,</claim-text>
<claim-text><b>dadurch gekennzeichnet, dass</b></claim-text>
<claim-text>die Oberfläche eines aufweist von</claim-text>
<claim-text>einem Fenster in einem Halbleiter Package (30) von dem Umgebungssensor und</claim-text>
<claim-text>ein Material, welches auf dem Halbleiter Substrat abgelagert ist.</claim-text></claim-text></claim>
<claim id="c-de-01-0010" num="0010">
<claim-text>Das Verfahren gemäß Anspruch 9, aufweisend ein Messen der Intensität mittels des Lichtsensors von Licht von der Lichtquelle während die Lichtquelle ausgeschaltet ist, an welcher keine Verschmutzungsschicht anwesend ist, in Abwesenheit von Umgebungslicht, zum Verwenden als eine kalibrierte Lichtintensitätscharakteristik für eine saubere transparente Oberfläche.</claim-text></claim>
<claim id="c-de-01-0011" num="0011">
<claim-text>Das Verfahren gemäß einem beliebigen von den Ansprüchen 9 oder 10, aufweisend ein Analysieren eines Frequenzspektrums von dem empfangenen Licht, um zwischen verschiedenen Arten von Umgebungslichtquellen zu unterscheiden.</claim-text></claim>
</claims>
<claims id="claims03" lang="fr"><!-- EPO <DP n="20"> -->
<claim id="c-fr-01-0001" num="0001">
<claim-text>Capteur environnemental comprenant :
<claim-text>un substrat semi-conducteur (20) comportant un capteur de lumière (10) ;</claim-text>
<claim-text>une surface (5 ; 40) à travers laquelle la lumière ambiante peut passer pour atteindre le capteur de lumière, et</claim-text>
<claim-text>une source de lumière (15) utilisable pour éclairer la surface, au moins une partie de la lumière provenant de la source de lumière étant réfléchie par la surface sur le capteur de lumière, le capteur environnemental étant utilisable pour déterminer la présence d'une couche d'encrassement (3) sur la surface en réalisant une première mesure comprenant la mesure de l'intensité de la lumière ambiante qui traverse la surface alors que la source de lumière est éteinte, en réalisant une deuxième mesure comprenant la mesure de l'intensité de la lumière atteignant le capteur de lumière alors que la source de lumière est allumée, et en soustrayant la première intensité mesurée de la deuxième intensité mesurée, et en utilisant le résultat de la soustraction pour déterminer l'intensité de la lumière réfléchie,</claim-text>
<claim-text><b>caractérisé en ce que</b> la surface comprend une fenêtre dans un boîtier semi-conducteur (30) du capteur environnemental ou un matériau déposé sur le substrat semi-conducteur.</claim-text><!-- EPO <DP n="21"> --></claim-text></claim>
<claim id="c-fr-01-0002" num="0002">
<claim-text>Capteur environnemental de la revendication 1, dans lequel le capteur de lumière et la source de lumière sont intégrés dans un substrat semi-conducteur commun.</claim-text></claim>
<claim id="c-fr-01-0003" num="0003">
<claim-text>Capteur environnemental de la revendication 1 ou la revendication 2 comprenant au moins un autre type de capteur (25).</claim-text></claim>
<claim id="c-fr-01-0004" num="0004">
<claim-text>Capteur environnemental de la revendication 3, dans lequel le capteur de lumière, la source de lumière et l'autre capteur sont chacun intégrés sur un substrat commun, dans lequel l'au moins un autre capteur est situé dans une première région du substrat et la source de lumière et le capteur de lumière sont situés dans une deuxième région du substrat, dans lequel la deuxième région est protégée de l'environnement par la surface, et dans lequel la première région est exposée à l'environnement.</claim-text></claim>
<claim id="c-fr-01-0005" num="0005">
<claim-text>Capteur environnemental d'une quelconque revendication précédente dans lequel la source de lumière est un dispositif à DEL.</claim-text></claim>
<claim id="c-fr-01-0006" num="0006">
<claim-text>Capteur environnemental d'une quelconque revendication précédente utilisable pour analyser un spectre de fréquence de la lumière reçue afin de différencier différentes sortes de sources de lumière ambiante.</claim-text></claim>
<claim id="c-fr-01-0007" num="0007">
<claim-text>Capteur environnemental d'une quelconque revendication précédente, dans lequel la surface comprend un matériau déposé sur le substrat semi-conducteur et le matériau déposé sur le substrat semi-conducteur comprend du nitrure de silicium, de l'oxynitrure de silicium ou du dioxyde de silicium.<!-- EPO <DP n="22"> --></claim-text></claim>
<claim id="c-fr-01-0008" num="0008">
<claim-text>Système de gestion environnementale comprenant au moins un capteur environnemental selon une quelconque revendication précédente.</claim-text></claim>
<claim id="c-fr-01-0009" num="0009">
<claim-text>Procédé de fonctionnement d'un capteur environnemental comprenant un substrat semi-conducteur (20) comportant un capteur de lumière (10), une surface (5 ; 40) à travers laquelle la lumière ambiante peut passer pour atteindre le capteur de lumière, et une source de lumière (15) utilisable pour éclairer la surface, au moins une partie de la lumière provenant de la source de lumière étant réfléchie par la surface sur le capteur de lumière, le procédé comprenant l'étape suivante :
<claim-text>déterminer la présence d'une couche d'encrassement (3) sur la surface en réalisant une première mesure comprenant la mesure de l'intensité de la lumière ambiante qui traverse la surface alors que la source de lumière est éteinte, en réalisant une deuxième mesure comprenant la mesure de l'intensité de la lumière atteignant le capteur de lumière alors que la source de lumière est allumée, et en soustrayant la première intensité mesurée de la deuxième intensité mesurée, et en utilisant le résultat de la soustraction pour déterminer l'intensité de la lumière réfléchie,</claim-text>
<claim-text><b>caractérisé en ce que</b></claim-text>
<claim-text>la surface comprend une fenêtre dans un boîtier semi-conducteur (30) du capteur environnemental ou un matériau déposé sur le substrat semi-conducteur.</claim-text></claim-text></claim>
<claim id="c-fr-01-0010" num="0010">
<claim-text>Procédé de la revendication 9 comprenant la mesure par le capteur de lumière de l'intensité de la lumière provenant de la source de lumière alors que la source de lumière est éteinte, sur laquelle aucune couche d'encrassement n'est présente, en l'absence de lumière ambiante, pour utilisation comme une intensité lumineuse étalonnée caractéristique d'une surface transparente propre.<!-- EPO <DP n="23"> --></claim-text></claim>
<claim id="c-fr-01-0011" num="0011">
<claim-text>Procédé de l'une quelconque des revendications 9 ou 10 comprenant l'analyse d'un spectre de fréquence de la lumière reçue pour différencier différentes sortes de sources de lumière ambiante.</claim-text></claim>
</claims>
<drawings id="draw" lang="en"><!-- EPO <DP n="24"> -->
<figure id="f0001" num="1,2"><img id="if0001" file="imgf0001.tif" wi="134" he="216" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="25"> -->
<figure id="f0002" num="3,4"><img id="if0002" file="imgf0002.tif" wi="145" he="222" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="26"> -->
<figure id="f0003" num="5,6"><img id="if0003" file="imgf0003.tif" wi="145" he="222" img-content="drawing" img-format="tif"/></figure><!-- EPO <DP n="27"> -->
<figure id="f0004" num="7"><img id="if0004" file="imgf0004.tif" wi="128" he="106" img-content="drawing" img-format="tif"/></figure>
</drawings>
<ep-reference-list id="ref-list">
<heading id="ref-h0001"><b>REFERENCES CITED IN THE DESCRIPTION</b></heading>
<p id="ref-p0001" num=""><i>This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.</i></p>
<heading id="ref-h0002"><b>Patent documents cited in the description</b></heading>
<p id="ref-p0002" num="">
<ul id="ref-ul0001" list-style="bullet">
<li><patcit id="ref-pcit0001" dnum="DE10214421"><document-id><country>DE</country><doc-number>10214421</doc-number></document-id></patcit><crossref idref="pcit0001">[0008]</crossref></li>
<li><patcit id="ref-pcit0002" dnum="US5998782A"><document-id><country>US</country><doc-number>5998782</doc-number><kind>A</kind></document-id></patcit><crossref idref="pcit0002">[0009]</crossref></li>
<li><patcit id="ref-pcit0003" dnum="EP1457763A"><document-id><country>EP</country><doc-number>1457763</doc-number><kind>A</kind></document-id></patcit><crossref idref="pcit0003">[0009]</crossref></li>
<li><patcit id="ref-pcit0004" dnum="DE102006039034"><document-id><country>DE</country><doc-number>102006039034</doc-number></document-id></patcit><crossref idref="pcit0004">[0009]</crossref></li>
<li><patcit id="ref-pcit0005" dnum="JP2002296342B"><document-id><country>JP</country><doc-number>2002296342</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0005">[0009]</crossref></li>
<li><patcit id="ref-pcit0006" dnum="US8144330B"><document-id><country>US</country><doc-number>8144330</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0006">[0009]</crossref></li>
<li><patcit id="ref-pcit0007" dnum="US7652586B"><document-id><country>US</country><doc-number>7652586</doc-number><kind>B</kind></document-id></patcit><crossref idref="pcit0007">[0009]</crossref></li>
</ul></p>
</ep-reference-list>
</ep-patent-document>
