Method of forming a high electron mobility semiconductor device and structure therefor

(19)

(11)

EP 2 779 246 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	29.11.2017 Bulletin 2017/48

(43)	Date of publication A2:
	17.09.2014 Bulletin 2014/38

(21)	Application number: 14159610.6

(22)	Date of filing: 13.03.2014

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International Patent Classification (IPC):

H01L 29/778^(2006.01)
H01L 29/417^(2006.01)
H01L 29/872^(2006.01)
H01L 27/06^(2006.01)
H01L 29/10^(2006.01)
H01L 29/205^(2006.01)

H01L 21/336^(2006.01)
H01L 29/41^(2006.01)
H01L 23/495^(2006.01)
H01L 21/8252^(2006.01)
H01L 29/20^(2006.01)
H01L 29/423^(2006.01)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
	Designated Extension States:
	BA ME

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Priority:

15.03.2013 US 201361786596 P
18.02.2014 US 201414182508

(71)	Applicant: Semiconductor Components Industries, LLC
	Phoenix, AZ 85008 (US)

(72)	Inventors:
	Moens, Peter B-9620 Zottegem (BE) Roig-Guitart, Jaume B-9700 Oudenaarde (BE)

(74)	Representative: Manitz Finsterwald Patentanwälte PartmbB
	Martin-Greif-Strasse 1 80336 München 80336 München (DE)

(54)	Method of forming a high electron mobility semiconductor device and structure therefor

(57) In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions of the HEM device.

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