(19)
(11) EP 2 793 255 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
17.01.2018 Bulletin 2018/03

(45) Mention of the grant of the patent:
06.12.2017 Bulletin 2017/49

(21) Application number: 13163861.1

(22) Date of filing: 16.04.2013
(51) International Patent Classification (IPC): 
H01L 21/8252(2006.01)
H01L 27/06(2006.01)
H01L 29/20(2006.01)
H01L 29/06(2006.01)
 H01L 29/778(2006.01)
H01L 29/872(2006.01)
H01L 29/10(2006.01)
H01L 29/66(2006.01)

(54)

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY DIODE AND A HIGH ELECTRON MOBILITY TRANSISTOR

HERSTELLUNGSVERFAHREN FÜR EINE HALBLEITERVORRICHTUNG MIT EINER SCHOTTKY-DIODE UND EINEM TRANSISTOR MIT HOHER ELEKTRONENMOBILITÄT

PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR COMPRENANT UNE DIODE SCHOTTKY ET UN TRANSISTOR À HAUTE MOBILITÉ D'ÉLECTRONS

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(43) Date of publication of application:
22.10.2014 Bulletin 2014/43

(73) Proprietor: IMEC VZW
3001 Leuven (BE)

(72) Inventors:
  • Decoutere, Stefaan
    3001 Leuven (BE)
  • Lenci, Silvia
    3001 Leuven (BE)

(74) Representative: Patent Department IMEC 
IMEC vzw Patent Department Kapeldreef 75
3001 Leuven
3001 Leuven (BE)


(56) References cited: : 
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US-A1- 2009 166 677
US-A1- 2011 193 171
US-A1- 2011 254 056
 US-A1- 2008 090 368
US-A1- 2011 042 719
US-A1- 2011 233 615
US-A1- 2012 146 093
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).