(19)
(11) EP 2 824 696 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
24.06.2015 Bulletin 2015/26

(43) Date of publication:
14.01.2015 Bulletin 2015/03

(21) Application number: 13757297.0

(22) Date of filing: 28.02.2013
(51) International Patent Classification (IPC): 
H01L 21/56(2006.01)
H01L 25/18(2006.01)
H01L 23/498(2006.01)
 H01L 25/07(2006.01)
H01L 23/495(2006.01)
H01L 23/31(2006.01)
(86) International application number:
PCT/JP2013/055523
(87) International publication number:
WO 2013/133134 (12.09.2013 Gazette 2013/37)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 07.03.2012 JP 2012050992

(71) Applicants:
  • TOYOTA JIDOSHA KABUSHIKI KAISHA
    Toyota-shi, Aichi-ken, 471-8571 (JP)
  • DENSO CORPORATION
    Kariya-city, Aichi 448-8661 (JP)

(72) Inventors:
  • KADOGUCHI, Takuya
    Toyota-shi, Aichi-ken, 471-8571 (JP)
  • IWASAKI, Shingo
    Toyota-shi, Aichi-ken, 471-8571 (JP)
  • MOCHIDA, Akira
    Kariya-shi, Aichi 448-8661 (JP)
  • OKUMURA, Tomomi
    Kariya-shi, Aichi 448-8661 (JP)

(74) Representative: Kuhnen & Wacker 
Patent- und Rechtsanwaltsbüro Prinz-Ludwig-Straße 40A
85354 Freising
85354 Freising (DE)


(56) References cited: : 
   
       


    (54) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF


    (57) The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. Two of the power units placed adjacent to each other in the predetermined direction have a passage therebetween through which the resin flows injected during manufacturing. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements such that the structure prevents the resin from flowing downstream in a resin flow direction, the end parts being on a side opposite to another side closer to the inlet.