LAMINATED SUBSTRATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLE

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EP 2 832 900 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	11.09.2019 Bulletin 2019/37

(45)	Mention of the grant of the patent:
	07.08.2019 Bulletin 2019/32

(21)	Application number: 12873342.5

(22)	Date of filing: 01.11.2012

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International Patent Classification (IPC):

H01L 21/20^(2006.01)
C23C 16/34^(2006.01)
H01L 21/205^(2006.01)
C30B 25/18^(2006.01)
H01L 29/20^(2006.01)
H01L 33/00^(2010.01)

C30B 29/38^(2006.01)
C30B 25/20^(2006.01)
H01L 33/32^(2010.01)
C30B 29/40^(2006.01)
H01L 29/04^(2006.01)

(86)	International application number:
	PCT/JP2012/078390

(87)	International publication number:
	WO 2013/145404 (03.10.2013 Gazette 2013/40)

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LAMINATED SUBSTRATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLE

LAMINIERTES SUBSTRAT AUS EINEM SILIZIUMEINKRISTALL UND EINEM GRUPPE-III-NITRID-EINKRISTALL UNTER EINEM WINKEL

SUBSTRAT STRATIFIÉ DE MONOCRISTAL DE SILICIUM ET DE MONOCRISTAL DE NITRURE DU GROUPE III PRÉSENTANT UN ANGLE DE DÉCALAGE

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

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Priority:

28.03.2012 JP 2012074182

(43)	Date of publication of application:
	04.02.2015 Bulletin 2015/06

(73)	Proprietors:
	Kabushiki Kaisha Toyota Chuo Kenkyusho Nagakute-shi, Aichi 480-1192 (JP) Denso Corporation Kariya-shi, Aichi 448-8661 (JP)

(72)	Inventors:
	NARITA, Tetsuo Nagakute-shi Aichi-ken 480-1192 (JP) ITO, Kenji Nagakute-shi Aichi-ken 480-1192 (JP) TOMITA, Kazuyoshi Nagakute-shi Aichi-ken 480-1192 (JP) OTAKE, Nobuyuki Kariya-shi Aichi-ken 448-8661 (JP) HOSHI, Shinichi Kariya-shi Aichi-ken 448-8661 (JP) MATSUI, Masaki Kariya-shi Aichi-ken 448-8661 (JP)

(74)	Representative: Kramer Barske Schmidtchen Patentanwälte PartG mbB
	European Patent Attorneys Landsberger Strasse 300 80687 München 80687 München (DE)

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References cited: :

JP-A- H0 864 913
JP-A- 2000 247 789
JP-A- 2003 332 242
JP-A- 2007 096 331
US-A1- 2009 246 944

JP-A- H11 260 835
JP-A- 2002 050 585
JP-A- 2004 051 446
JP-A- 2008 227 338

STACIA KELLER ET AL: "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", PHYSICA STATUS SOLIDI (C), vol. 8, no. 7-8, 9 July 2011 (2011-07-09), pages 2086-2088, XP055092906, ISSN: 1862-6351, DOI: 10.1002/pssc.201000958
K. SAITO ET AL: "Measurement of misorientation of AlN layer grown on (111)Si for freestanding substrate", PHYSICA STATUS SOLIDI (C), vol. 6, no. S2, 14 June 2009 (2009-06-14), pages S293-S296, XP055092831, ISSN: 1862-6351, DOI: 10.1002/pssc.200880787
LEE W ET AL: "Growth and structural characteristics of GaN/AlN /nanothick [gamma]-Al2O3/Si (111)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 26, no. 3, 30 May 2008 (2008-05-30), pages 1064-1067, XP012114229, ISSN: 1071-1023, DOI: 10.1116/1.2905241
WAKAHARA A ET AL: "Organometallic vapor phase epitaxy of GaN on Si(111) with a gamma-Al2O3(111) epitaxial intermediate layer", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 236, no. 1-3, March 2002 (2002-03), pages 21-25, XP004339641, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(01)02090-5

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