ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSK..HRIS..MTNORS..SM..................JBDM Ver 0.1.67 (18 Oct 2017) - 2999001/02832900CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120190911W154deBibliographieenBibliographyfrBibliographieEP12873342.5201211012014102120160421jaenen201207418220120328JP2019091120193720150204201506201908072019322019031120190911201937H01L 21/20 20060101AFI20190204BHEP C30B 29/38 20060101ALI20190204BHEP C23C 16/34 20060101ALI20190204BHEP C30B 25/20 20060101ALI20190204BHEP H01L 21/205 20060101ALI20190204BHEP H01L 33/32 20100101ALI20190204BHEP C30B 25/18 20060101ALI20190204BHEP C30B 29/40 20060101ALI20190204BHEP H01L 29/20 20060101ALI20190204BHEP H01L 29/04 20060101ALI20190204BHEP H01L 33/00 20100101ALN20190204BHEP deLAMINIERTES SUBSTRAT AUS EINEM SILIZIUMEINKRISTALL UND EINEM GRUPPE-III-NITRID-EINKRISTALL UNTER EINEM WINKELenLAMINATED SUBSTRATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLEfrSUBSTRAT STRATIFIÉ DE MONOCRISTAL DE SILICIUM ET DE MONOCRISTAL DE NITRURE DU GROUPE III PRÉSENTANT UN ANGLE DE DÉCALAGEJP-A- H0 864 913JP-A- H11 260 835JP-A- 2000 247 789JP-A- 2002 050 585JP-A- 2003 332 242JP-A- 2004 051 446JP-A- 2007 096 331JP-A- 2008 227 338US-A1- 2009 246 944STACIA KELLER ET AL: "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", PHYSICA STATUS SOLIDI (C), vol. 8, no. 7-8, 9 July 2011 (2011-07-09), pages 2086-2088, XP055092906, ISSN: 1862-6351, DOI: 10.1002/pssc.201000958K. SAITO ET AL: "Measurement of misorientation of AlN layer grown on (111)Si for freestanding substrate", PHYSICA STATUS SOLIDI (C), vol. 6, no. S2, 14 June 2009 (2009-06-14), pages S293-S296, XP055092831, ISSN: 1862-6351, DOI: 10.1002/pssc.200880787LEE W ET AL: "Growth and structural characteristics of GaN/AlN /nanothick [gamma]-Al2O3/Si (111)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 26, no. 3, 30 May 2008 (2008-05-30), pages 1064-1067, XP012114229, ISSN: 1071-1023, DOI: 10.1116/1.2905241WAKAHARA A ET AL: "Organometallic vapor phase epitaxy of GaN on Si(111) with a gamma-Al2O3(111) epitaxial intermediate layer", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 236, no. 1-3, March 2002 (2002-03), pages 21-25, XP004339641, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(01)02090-520150901NARITA, Tetsuoc/o KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO 41-1, YokomichiNagakute-shi Aichi-ken 480-1192JPITO, Kenjic/o KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO 41-1, YokomichiNagakute-shi Aichi-ken 480-1192JPTOMITA, Kazuyoshic/o KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO 41-1, YokomichiNagakute-shi Aichi-ken 480-1192JPOTAKE, Nobuyukic/o DENSO CORPORATION 1-1 Showa-choKariya-shi Aichi-ken 448-8661JPHOSHI, Shinichic/o DENSO CORPORATION 1-1 Showa-choKariya-shi Aichi-ken 448-8661JPMATSUI, Masakic/o DENSO CORPORATION 1-1 Showa-choKariya-shi Aichi-ken 448-8661JPKabushiki Kaisha Toyota Chuo Kenkyusho101317756KAI218-24154WE41-1, YokomichiNagakute-shi, Aichi 480-1192JPDenso Corporation101137876KAI218-24154WE1-1, Showa-choKariya-shi, Aichi 448-8661JPKramer Barske Schmidtchen Patentanwälte PartG mbB100061463European Patent Attorneys Landsberger Strasse 30080687 MünchenDEALATBEBGCHCYCZDEDKEEESFIFRGBGRHRHUIEISITLILTLULVMCMKMTNLNOPLPTRORSSESISKSMTRJP201207839020121101jaWO201314540420131003201340