(19)
(11) EP 2 843 708 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
15.04.2015 Bulletin 2015/16

(43) Date of publication:
04.03.2015 Bulletin 2015/10

(21) Application number: 14182215.5

(22) Date of filing: 26.08.2014
(51) International Patent Classification (IPC): 
H01L 29/78(2006.01)
 H01L 29/66(2006.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30) Priority: 28.08.2013 KR 20130102768
25.10.2013 KR 20130127760
25.10.2013 KR 20130127810
22.11.2013 KR 20130142826

(71) Applicant: Seoul Semiconductor Co., Ltd.
Ansan-si 425-090 (KR)

(72) Inventors:
  • Takeya, Motonobu
    Gyeonggi-do, 425-090 (KR)
  • Lee, Kwan Hyun
    Gyeonggi-do, 425-090 (KR)
  • Kim, Eun Hee
    Gyeonggi-do, 425-090 (KR)

(74) Representative: Stolmár & Partner Patentanwälte PartG mbB 
Blumenstraße 17
80331 München
80331 München (DE)

   


(54) Nitride-based transistors and methods of fabricating the same


(57) A method of fabricating a nitride-based transistor is provided. The method includes sequentially forming a first nitride-based semiconductor layer doped with first type dopants, a second nitride-based semiconductor layer doped with second type dopants, and a third nitride-based semiconductor layer doped with the first type dopants on a substrate. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer.