(19)
(11) EP 2 881 182 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
16.12.2015 Bulletin 2015/51

(43) Date of publication A2:
10.06.2015 Bulletin 2015/24

(21) Application number: 14178360.5

(22) Date of filing: 24.07.2014
(51) International Patent Classification (IPC): 
B06B 1/02(2006.01)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30) Priority: 04.12.2013 KR 20130150162

(71) Applicant: Samsung Electronics Co., Ltd
Gyeonggi-do 443-742 (KR)

(72) Inventors:
  • Shim, Dong-sik
    443-803 Gyeonggi-do (KR)
  • Hong, Seog-woo
    443-803 Gyeonggi-do (KR)
  • Chung, Seok-whan
    443-803 Gyeonggi-do (KR)
  • Kim, Chang-jung
    443-803 Gyeonggi-do (KR)

(74) Representative: Greene, Simon Kenneth 
Elkington and Fife LLP Prospect House 8 Pembroke Road
Sevenoaks, Kent TN13 1XR
Sevenoaks, Kent TN13 1XR (GB)

   


(54) Capacitive micromachined ultrasonic transducer and method of fabricating the same


(57) A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.







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