(19)
(11) EP 2 883 241 A1

(12)

(43) Date of publication:
17.06.2015 Bulletin 2015/25

(21) Application number: 13827735.5

(22) Date of filing: 24.07.2013
(51) International Patent Classification (IPC): 
H01L 21/306(2006.01)
H01L 21/336(2006.01)
H01L 29/786(2006.01)
 H01L 21/308(2006.01)
H01L 29/78(2006.01)
(86) International application number:
PCT/JP2013/070675
(87) International publication number:
WO 2014/024737 (13.02.2014 Gazette 2014/07)
(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated Extension States:
BA ME

(30) Priority: 10.08.2012 JP 2012179042
26.12.2012 JP 2012283429

(71) Applicant: FUJIFILM Corporation
Tokyo 106-8620 (JP)

(72) Inventors:
  • KOYAMA, Akiko
    Haibara-gun Shizuoka 421-0396 (JP)
  • MIZUTANI, Atsushi
    Haibara-gun Shizuoka 421-0396 (JP)
  • KAMIMURA, Tetsuya
    Haibara-gun Shizuoka 421-0396 (JP)
  • SHIMIZU, Tetsuya
    Haibara-gun Shizuoka 421-0396 (JP)
  • INABA, Tadashi
    Haibara-gun Shizuoka 421-0396 (JP)

(74) Representative: Hoffmann Eitle 
Patent- und Rechtsanwälte PartmbB Arabellastraße 30
81925 München
81925 München (DE)

   


(54) METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID