THERMODYNAMICALLY STABLE BINARY OXIDE DOPED WITH LOWER VALENCE ELEMENT, ITS SYNTHESIS AND APPLICATION IN ELECTROCHEMICAL DEVICES - Patent 2943990

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EP 2 943 990 A1

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(43)	Date of publication:
	18.11.2015 Bulletin 2015/47

(21)	Application number: 13815703.7

(22)	Date of filing: 11.12.2013

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International Patent Classification (IPC):

H01M 4/88^(2006.01)

(86)	International application number:
	PCT/EP2013/076268

(87)	International publication number:
	WO 2014/108269 (17.07.2014 Gazette 2014/29)

(84)	Designated Contracting States:
	AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
	Designated Extension States:
	BA ME

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Priority:

09.01.2013 EP 13150645

(71)	Applicant: Paul Scherrer Institut
	5232 Villigen PSI (CH)

(72)	Inventors:
	FABBRI, Emiliana CH-5200 Brugg AG (CH) KÖTZ, Ruediger CH-5316 Gippingen (CH) RABIS, Annett CH-8902 Urdorf (CH) SCHMIDT, Thomas Justus CH-5314 Kleindöttingen (CH)

(74)	Representative: Fischer, Michael
	Siemens AG Postfach 22 16 34 80506 München 80506 München (DE)

(54)	THERMODYNAMICALLY STABLE BINARY OXIDE DOPED WITH LOWER VALENCE ELEMENT, ITS SYNTHESIS AND APPLICATION IN ELECTROCHEMICAL DEVICES