(19)
(11) EP 2 988 305 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
11.03.2020 Bulletin 2020/11

(45) Mention of the grant of the patent:
18.12.2019 Bulletin 2019/51

(21) Application number: 14181308.9

(22) Date of filing: 18.08.2014
(51) International Patent Classification (IPC): 
G11C 11/419(2006.01)
G11C 8/08(2006.01)
 G11C 7/22(2006.01)
G11C 11/418(2006.01)

(54)

MEMORY DEVICE USING A TWO PHAS WRITE SCHEME TO IMPROVE LOW VOLTAGE WRITE ABILITY

SPEICHERVORRICHTUNG MIT EINEM ZWEIPHASIGEN SCHREIBSCHEMA ZUR VERBESSERUNG DER SCHREIBFÄHIGKEIT BEI NIEDERSPANNUNG

DISPOSITIF DE MÉMOIRE UTILISANT UN SCHÉMA D'ÉCRITURE EN DEUX PHASES POUR AMÉLIORER LA CAPACITÉ D'ÉCRITURE À BASSE TENSION

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(43) Date of publication of application:
24.02.2016 Bulletin 2016/08

(73) Proprietor: Synopsys, Inc.
Mountain View, CA 94043 (US)

(72) Inventors:
  • Siddiqui, Mohammed Sultan Mohiuddin
    Indirapuram (IN)
  • Sharad, Shailendra
    UP-201308 Greater Noida (IN)
  • Khanuja, Amit
    110008 New Delhi (IN)
  • Vats, Hemant
    110014 New Delhi (IN)

(74) Representative: Epping - Hermann - Fischer 
Patentanwaltsgesellschaft mbH Schloßschmidstraße 5
80639 München
80639 München (DE)


(56) References cited: : 
US-A1- 2008 106 963
US-A1- 2014 119 101
 US-A1- 2009 273 994
US-A1- 2014 211 578
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).