(19)
(11) EP 3 018 696 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 2 (W2 B1)

(48) Corrigendum issued on:
23.02.2022 Bulletin 2022/08

(45) Mention of the grant of the patent:
17.11.2021 Bulletin 2021/46

(21) Application number: 14820214.6

(22) Date of filing: 03.07.2014
(51) International Patent Classification (IPC): 
H01L 21/18(2006.01)
H01L 21/762(2006.01)
 H01L 21/20(2006.01)
H01L 29/16(2006.01)
(52) Cooperative Patent Classification (CPC):
H01L 21/2007; H01L 29/1608; H01L 21/187; H01L 21/02002; H01L 21/76254
(86) International application number:
PCT/JP2014/067777
(87) International publication number:
WO 2015/002266 (08.01.2015 Gazette 2015/01)

(54)

MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE

VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERSUBSTRATS

PROCÉDÉ DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR

(84) Designated Contracting States:
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

(30) Priority: 05.07.2013 JP 2013142151

(43) Date of publication of application:
11.05.2016 Bulletin 2016/19

(73) Proprietors:
  • SICOXS CORPORATION
    Minato-ku, Tokyo 1050004 (JP)
  • National Institute of Advanced Industrial Science and Technology
    Tsukuba-shi, Ibaraki 3058564 (JP)

(72) Inventors:
  • IMAOKA Ko
    Kariya-shi, Aichi, 4488671 (JP)
  • KOBAYASHI Motoki
    Tokyo 1050004 (JP)
  • UCHIDA Hidetsugu
    Tokyo 1050004 (JP)
  • YAGI Kuniaki
    Tokyo 1050004 (JP)
  • KAWAHARA Takamitsu
    Tokyo 1050004 (JP)
  • HATTA Naoki
    Tokyo 1050004 (JP)
  • MINAMI Akiyuki
    Tokyo 1050004 (JP)
  • SAKATA Toyokazu
    Tokyo 1050004 (JP)
  • MAKINO Tomoatsu
    Tokyo 1050004 (JP)
  • TAKAGI Hideki
    Tsukuba-shi, Ibaraki 3058564 (JP)
  • KURASHIMA Yuuichi
    Tsukuba-shi, Ibaraki 3058564 (JP)

(74) Representative: Winter, Brandl - Partnerschaft mbB 
Alois-Steinecker-Straße 22
85354 Freising
85354 Freising (DE)


(56) References cited: : 
JP-A- 2000 091 176
JP-A- 2005 252 550
JP-A- 2010 541 230
 JP-A- 2004 503 942
JP-A- 2009 117 533
US-A1- 2003 008 475
   
  • HIDEKI TAKAGI ET AL: "Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS), vol. 38, no. 3A, 1 March 1999 (1999-03-01) , pages 1589-1594, XP055342121,
  • ESSIG S ET AL: "Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 113, no. 20, 28 May 2013 (2013-05-28) , pages 203512-203512, XP012174192, ISSN: 0021-8979, DOI: 10.1063/1.4807905 [retrieved on 2013-05-28]
  • None
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).